TI TRF7003

TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
D
D
D
D
D
D
D
D
D
D
PK PACKAGE
(TOP VIEW)
Wide Operating Frequency Range up to
1000 MHz
High Output Power:
– Typical Value of 32 dBm at 4.8 V and 900
MHz
– Typical Value of 29 dBm at 3.6 V and
900 MHz
High Gain:
– Typical Value of 9 dB at 4.8 V and
900 MHz at 32-dBm Output Power
High Power-Added Efficiency (PAE):
– Typical Value of 50% at 32-dBm Output
Power
Low Cost
Extremely Rugged:
– Sustains 20:1 Load Mismatch
Suitable for Various Wireless Applications
Low Leakage Current <1 mA
SOT-89 Plastic Power Package
1000 V Human Body Model ESD Protection
on Gate and Drain
G
S
D
description
The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET)
manufactured using the Texas Instruments RFMOS process. It is housed in a SOT-89 (PK) plastic power
package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global
systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost
device, operates from a single-polarity positive power supply and has low leakage current. Typical power output
at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE).
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
RFMOS is a trademark of Texas Instruments Incorporated.
Copyright  1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Drain-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Gate-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Continuous drain current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
Junction temperature, TJ max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Thermal resistance, junction to case, RθJC (See Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W
Total device power dissipation at TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5 W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW/°C
Operating free-air temperature range,TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 100°C
ESD protection, gate and drain, human body model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 V
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under ”recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: With infinite heatsink and no air flow
electrical characteristics over operating free-air temperature range (unless otherwise noted)
dc characteristics
TEST CONDITIONS‡
PARAMETER
ID
gm
Saturated drain current
V(TO)
Threshold voltage
V(BR)sd
Source-drain breakdown voltage
Transconductance
Leakage current
LIMITS
MIN
TYP
MAX
0.7
UNITS
VDS = 4.8 V,
VDS = 4.8 V,
VGS = 1.7 V
VGS = 1.7 V
A
VDS = 100mV,
Ids = 40 µA,
Source is grounded
IDS = 1.5 mA
VGS = 0 V
1.0
V
16
V
VDS = 4.8 V
VGS = 0 V
<1
µA
1000
mS
‡ TA = 25°C
RF characteristics, VDS = 4.8 V, VGS = 1.7 V
TEST CONDITIONS§
PARAMETER
ηadd
Output power
Frequency = 900 MHz,
Power gain
Frequency = 900 MHz,
PI = 23 dBm
PI = 23 dBm
Power added efficiency
Frequency = 900 MHz,
PI = 23 dBm
Ruggedness test
Frequency = 900 MHz,
Load VSWR = 20:1,
PI = 23 dBm,
All phase angles
§ TA = 25°C, fixed matching circuit
¶ No degradation in output power after test.
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
LIMITS
TYP
31
32
dBm
9
dB
45%
50%
¶
MAX
UNITS
MIN
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
TYPICAL CHARACTERISTICS
OUTPUT POWER
vs
INPUT POWER
OUTPUT POWER
vs
FREQUENCY
35
34
TA = –40°C
TA = –40°C
PO – Output Power – dBm
PO – Output Power – dBm
30
TA = 25°C
25
TA = 85°C
20
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
Frequency = 900 MHz
15
10
0
5
10
15
PI – Input Power – dBm
20
TA = 25°C
32
TA = 85°C
30
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
PI = 23 dBm
28
850
25
870
890
910
Figure 1
950
Figure 2
OUTPUT POWER
vs
GATE VOLTAGE
(MAX POWER ADDED EFFICIENCY TUNING)
OUTPUT POWER
vs
DRAIN VOLTAGE
33
35
TA = –40°C
34
TA = 25°C
TA = –40°C
33
PO – Output Power – dBm
PO – Output Power – dBm
930
f – Frequency – MHz
TA = 25°C
32
31
TA = 85°C
30
29
4.8 V GSM Application Circuit
VGS = 1.7 V
PI = 23 dBm
Frequency = 900 MHz
28
27
32
TA = 85°C
31
4.8 V GSM Application Circuit
VDD = 4.8 V
PI = 23 dBm
Frequency = 900 MHz
30
29
26
3
3.5
4
4.5
5
VDD – Drain Voltage – V
5.5
6
1
1.2
Figure 3
1.8
1.4
1.6
VGS – Gate Voltage – V
2
Figure 4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
TYPICAL CHARACTERISTICS
POWER ADDED EFFICIENCY
vs
INPUT POWER
POWER ADDED EFFICIENCY
vs
FREQUENCY
55
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
Frequency = 900 MHz
50
TA = –40°C
PAE – Power Added Efficiency – %
PAE – Power Added Efficiency – %
60
TA = –40°C
40
TA = 25°C
30
TA = 85°C
20
10
0
0
5
10
15
PI – Input Power – dBm
20
50
TA = 25°C
45
TA = 85°C
40
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
PI = 23 dBm
35
30
850
25
870
Figure 5
930
950
POWER GAIN
vs
INPUT POWER
55
14
TA = –40°C
TA = –40°C
13
TA = 25°C
TA = 25°C
50
12
GP – Power Gain – dB
PAE – Power Added Efficiency – %
910
Figure 6
POWER ADDED EFFICIENCY
vs
DRAIN VOLTAGE
TA = 85°C
45
40
TA = 85°C
11
10
9
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
Frequency = 900 MHz
8
4.8 V GSM Application Circuit
VGS = 1.7 V
PI = 23 dBm
Frequency = 900 MHz
35
7
30
6
3
3.5
5
4.5
VDD – Drain Voltage – V
4
5.5
6
0
Figure 7
4
890
f – Frequency – MHz
5
10
15
PI – Input Power – dBm
Figure 8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
20
25
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
TYPICAL CHARACTERISTICS
MAXIMUM AVAILABLE GAIN
vs
FREQUENCY
G MAX – Maximum Available Gain – dB
25
VDS = 4.8 V
VGS = 1.7 V
TA = 25°C
23
21
19
17
15
13
11
9
7
5
100
300
500
700
900 1100
f – Frequency – MHz
1300 1500
Figure 9
Table 1 lists the small signal scattering parameters of the TRF7003.
Table 1. Small Signal Scattering Parameters, VDS = 4.8 V, VGS = 1.7 V
FREQ MHz
S11
(MAG)
S11
(ANG)
S21
(MAG)
S21
(ANG)
S12
(MAG)
S12
(ANG)
S22
(MAG)
S22
(ANG)
100
0.87
–150.14
9.30
96.71
200
0.87
–165.55
4.68
82.07
0.03
8.65
0.77
–166.79
0.03
–4.19
0.79
–173.48
300
0.87
–171.34
3.06
400
0.88
–174.68
2.24
71.95
0.03
–12.23
0.80
–175.44
63.69
0.03
–18.69
0.82
–177.12
500
0.88
–177.12
600
0.89
179.25
1.74
56.64
0.03
–23.87
0.83
–178.14
1.40
49.46
0.02
–28.83
0.84
700
0.89
–179.71
178.67
1.15
43.07
0.02
–32.53
0.85
179.05
800
900
0.90
176.99
0.97
37.34
0.02
–36.07
0.86
177.34
0.91
175.01
0.83
32.10
0.02
–38.84
0.86
175.88
1000
0.91
173.15
0.71
26.71
0.02
–40.84
0.88
174.07
1100
0.91
171.29
0.62
21.52
0.02
–43.07
0.88
172
1200
0.91
169.46
0.55
16.99
0.02
–44.22
0.88
170.33
1300
0.91
167.47
0.48
12.40
0.01
–45.28
0.88
168.38
1400
0.91
165.25
0.43
7.64
0.01
–45
0.88
165.99
1500
0.90
163.33
0.39
3.76
0.01
–45
0.88
164.11
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
APPLICATION INFORMATION
VDS
R1
C7
C8
VGS
50 Ω line
w = 22 mils
l = λ/4
C6
L1
50 Ω line
w = 22 mils
l = 950 mils
w = 22 mils
l = 70 mils
w = 22 mils
l = 430 mils
RF out
w = 22 mils
l = 50 mils
C3
RF in
C5
C4
TRF7003
C1
C2
Board Material Specifications:
Type FR4 ; εr = 4.3 ; h = 12 mils
Figure 10. Recommended Application Circuit for 4.8-V GSM
Table 2 lists the TRF7003 components for the recommended 4.8-V GSM application circuit.
Table 2. Component List
DESIGNATORS
DESCRIPTION
VALUE
MANUFACTURER†
MANUFACTURER P/N
C1
Capacitor
22 pF
ATC
ATC100A220JP150X
C2
Capacitor
18 pF
ATC
ATC100A180JP150X
C3
Capacitor
16 pF
ATC
ATC100A160JP150X
C4
Capacitor
2.7 pF
ATC
ATC100A2R7CP150X
C5
Capacitor
100 pF
ATC
ATC100A101JP150X
C6
Capacitor
1 µF
MURATA
GRM220Y5V105Z010
C7
Capacitor
100 pF
ATC
ATC100A101JP150X
C8
Capacitor
1 µF
MURATA
GRM220Y5V105Z010
R1
Resistor
30 Ω
International Manufacturing Services
RCI–0402–30ROJ
Inductor
15 nH
TOKO
LL2012–F15NK
L1
† Or equivalent device
ATC is a trademark of American Technical Ceramics Corporation
6
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
MECHANICAL DATA
PK (R-PSSO-F3)
PLASTIC SINGLE-IN-LINE PACKAGE
1,60
1,40
4,60
4,40
0,40 TYP
1,80 MAX
2,60
2,40
4,25 MAX
0,80 MIN
0,48 MAX
0,44 MAX
0,53 MAX
1,50 TYP
4040234 / B 03/95
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. The center lead is in electrical contact with the tab.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright  1999, Texas Instruments Incorporated