TI LM348MX/NOPB

LM148-N, LM248-N, LM348-N
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SNOSBT2E – MAY 1999 – REVISED MARCH 2013
LM148/LM248/LM348 Quad 741 Op Amps
Check for Samples: LM148-N, LM248-N, LM348-N
FEATURES
DESCRIPTION
•
•
The LM148 series is a true quad 741. It consists of
four independent, high gain, internally compensated,
low power operational amplifiers which have been
designed to provide functional characteristics
identical to those of the familiar 741 operational
amplifier. In addition the total supply current for all
four amplifiers is comparable to the supply current of
a single 741 type op amp. Other features include
input offset currents and input bias current which are
much less than those of a standard 741. Also,
excellent isolation between amplifiers has been
achieved by independently biasing each amplifier and
using layout techniques which minimize thermal
coupling.
1
2
•
•
•
•
•
•
•
•
741 Op Amp Operating Characteristics
Class AB Output Stage—No Crossover
Distortion
Pin Compatible With the LM124
Overload Protection for Inputs and Outputs
Low Supply Current Drain: 0.6 mA/Amplifier
Low Input Offset Voltage: 1 mV
Low Input Offset Current: 4 nA
Low Input Bias Current 30 nA
High Degree of Isolation Between Amplifiers:
120 dB
Gain Bandwidth Product
–
LM148 (Unity Gain): 1.0 MHz
The LM148 can be used anywhere multiple 741 or
1558 type amplifiers are being used and in
applications where amplifier matching or high packing
density is required. For lower power refer to LF444.
Schematic Diagram
* 1 pF in the LM149
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1999–2013, Texas Instruments Incorporated
LM148-N, LM248-N, LM348-N
SNOSBT2E – MAY 1999 – REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
LM148
LM248
LM348
Supply Voltage
±22V
±18V
±18V
Differential Input Voltage
±44V
±36V
±36V
Continuous
Continuous
Continuous
—
—
750 mW
100°C/W
Output Short Circuit Duration
(3)
Power Dissipation (Pd at 25°C) and Thermal Resistance (θjA) (4)
PDIP (NFF) Pd
θJA
CDIP (J) Pd
—
—
1100 mW
800 mW
700 mW
110°C/W
110°C/W
110°C/W
θJA
Maximum Junction Temperature (TjMAX)
Operating Temperature Range
Storage Temperature Range
150°C
110°C
100°C
−55°C ≤ TA ≤
+125°C
−25°C ≤ TA ≤
+85°C
0°C ≤ TA ≤ +70°C
−65°C to +150°C
−65°C to +150°C
−65°C to +150°C
300°C
300°C
300°C
Lead Temperature (Soldering, 10 sec.) Ceramic
Lead Temperature (Soldering, 10 sec.) Plastic
260°C
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
260°C
260°C
260°C
Small Outline Package
Vapor Phase (60 seconds)
215°C
215°C
215°C
Infrared (15 seconds)
220°C
220°C
220°C
500V
500V
500V
ESD tolerance (5)
(1)
(2)
(3)
(4)
(5)
Refer to RETS 148X for LM148 military specifications.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Any of the amplifier outputs can be shorted to ground indefinitely; however, more than one should not be simultaneously shorted as the
maximum junction temperature will be exceeded.
The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the
ambient temperature, TA. The maximum available power dissipation at any temperature is Pd = (TJMAX − TA)/θJA or the 25°C PDMAX,
whichever is less.
Human body model, 1.5 kΩ in series with 100 pF.
Electrical Characteristics
These specifications apply for VS = ±15V and over the absolute maximum operating temperature range (TL ≤ TA ≤ TH) unless
otherwise noted.
Parameter
Conditions
LM148
Min
LM248
Typ
Max
1.0
5.0
Min
LM348
Typ
Max
1.0
6.0
Min
Units
Typ
Max
1.0
6.0
mV
nA
Input Offset Voltage
TA = 25°C, RS ≤ 10 kΩ
Input Offset Current
TA = 25°C
4
25
4
50
4
50
Input Bias Current
TA = 25°C
30
100
30
200
30
200
Input Resistance
TA = 25°C
Supply Current All
Amplifiers
TA = 25°C, VS = ±15V
Large Signal Voltage Gain
TA = 25°C, VS = ±15V
VOUT = ±10V, RL ≥ 2 kΩ
Amplifier to Amplifier
Coupling
TA = 25°C, f = 1 Hz to 20 kHz
(Input Referred)
See Crosstalk Test Circuit
Small Signal Bandwidth
TA = 25°C,
LM148 Series
Phase Margin
2
0.8
TA = 25°C,
LM148 Series (AV = 1)
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2.5
2.4
50
160
0.8
3.6
2.5
2.4
25
160
0.8
4.5
2.5
2.4
25
nA
MΩ
4.5
mA
160
V/mV
−120
−120
−120
dB
1.0
1.0
1.0
MHz
60
60
60
degrees
Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM148-N LM248-N LM348-N
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SNOSBT2E – MAY 1999 – REVISED MARCH 2013
Electrical Characteristics (continued)
These specifications apply for VS = ±15V and over the absolute maximum operating temperature range (TL ≤ TA ≤ TH) unless
otherwise noted.
Parameter
Slew Rate
Conditions
LM148
Min
TA = 25°C,
LM148 Series (AV = 1)
Output Short Circuit
Current
TA = 25°C
Input Offset Voltage
RS ≤ 10 kΩ
Typ
LM248
Max
Min
Typ
LM348
Max
Min
Typ
Units
Max
0.5
0.5
0.5
V/μs
25
25
25
mA
6.0
7.5
7.5
mV
Input Offset Current
75
125
100
nA
Input Bias Current
325
500
400
nA
Large Signal Voltage Gain VS = ±15V, VOUT = ±10V,
RL > 2 kΩ
25
Output Voltage Swing
VS = ±15V, RL = 10 kΩ
±12
±13
±12
±13
±12
±13
V
RL = 2 kΩ
±10
±12
±10
±12
±10
±12
V
Input Voltage Range
VS = ±15V
±12
Common-Mode Rejection
Ratio
RS ≤ 10 kΩ
70
90
70
90
70
90
dB
Supply Voltage Rejection
RS ≤ 10 kΩ, ±5V ≤ VS ≤ ±15V
77
96
77
96
77
96
dB
15
15
±12
V/mV
±12
V
CROSS TALK TEST CIRCUIT
VS = ±15V
Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM148-N LM248-N LM348-N
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SNOSBT2E – MAY 1999 – REVISED MARCH 2013
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Typical Performance Characteristics
4
Supply Current
Input Bias Current
Figure 1.
Figure 2.
Voltage Swing
Positive Current Limit
Figure 3.
Figure 4.
Negative Current Limit
Output Impedance
Figure 5.
Figure 6.
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SNOSBT2E – MAY 1999 – REVISED MARCH 2013
Typical Performance Characteristics (continued)
Common-Mode Rejection Ratio
Open Loop Frequency Response
Figure 7.
Figure 8.
Bode Plot LM148
Large Signal Pulse Response (LM148)
Figure 9.
Figure 10.
Small Signal Pulse Response (LM148)
Undistorted Output Voltage Swing
Figure 11.
Figure 12.
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LM148-N, LM248-N, LM348-N
SNOSBT2E – MAY 1999 – REVISED MARCH 2013
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Typical Performance Characteristics (continued)
6
Gain Bandwidth
Slew Rate
Figure 13.
Figure 14.
Inverting Large Signal Pulse Response (LM148)
Input Noise Voltage and Noise Current
Figure 15.
Figure 16.
Positive Common-Mode Input Voltage Limit
Negative Common-Mode Input Voltage Limit
Figure 17.
Figure 18.
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SNOSBT2E – MAY 1999 – REVISED MARCH 2013
APPLICATION HINTS
The LM148 series are quad low power 741 op amps. In the proliferation of quad op amps, these are the first to
offer the convenience of familiar, easy to use operating characteristics of the 741 op amp. In those applications
where 741 op amps have been employed, the LM148 series op amps can be employed directly with no change
in circuit performance.
The package pin-outs are such that the inverting input of each amplifier is adjacent to its output. In addition, the
amplifier outputs are located in the corners of the package which simplifies PC board layout and minimizes
package related capacitive coupling between amplifiers.
The input characteristics of these amplifiers allow differential input voltages which can exceed the supply
voltages. In addition, if either of the input voltages is within the operating common-mode range, the phase of the
output remains correct. If the negative limit of the operating common-mode range is exceeded at both inputs, the
output voltage will be positive. For input voltages which greatly exceed the maximum supply voltages, either
differentially or common-mode, resistors should be placed in series with the inputs to limit the current.
Like the LM741, these amplifiers can easily drive a 100 pF capacitive load throughout the entire dynamic output
voltage and current range. However, if very large capacitive loads must be driven by a non-inverting unity gain
amplifier, a resistor should be placed between the output (and feedback connection) and the capacitance to
reduce the phase shift resulting from the capacitive loading.
The output current of each amplifier in the package is limited. Short circuits from an output to either ground or the
power supplies will not destroy the unit. However, if multiple output shorts occur simultaneously, the time
duration should be short to prevent the unit from being destroyed as a result of excessive power dissipation in
the IC chip.
As with most amplifiers, care should be taken lead dress, component placement and supply decoupling in order
to ensure stability. For example, resistors from the output to an input should be placed with the body close to the
input to minimize “pickup” and maximize the frequency of the feedback pole which capacitance from the input to
ground creates.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and
capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole.
In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed
loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less
than approximately six times the expected 3 dB frequency a lead capacitor should be placed from the output to
the input of the op amp. The value of the added capacitor should be such that the RC time constant of this
capacitor and the resistance it parallels is greater than or equal to the original feedback pole time constant.
Copyright © 1999–2013, Texas Instruments Incorporated
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LM148-N, LM248-N, LM348-N
SNOSBT2E – MAY 1999 – REVISED MARCH 2013
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Typical Applications—LM148
Figure 19. One Decade Low Distortion Sinewave Generator
fMAX = 5 kHz, THD ≤ 0.03%
R1 = 100k pot. C1 = 0.0047 μF, C2 = 0.01 μF, C3 = 0.1 μF, R2 = R6 = R7 = 1M,
R3 = 5.1k, R4 = 12Ω, R5 = 240Ω, Q = NS5102, D1 = 1N914, D2 = 3.6V avalanche
diode (ex. LM103), VS = ±15V
A simpler version with some distortion degradation at high frequencies can be made by using A1 as a simple inverting
amplifier, and by putting back to back zeners in the feedback loop of A3.
Figure 20. Low Cost Instrumentation Amplifier
VS = ±15V
R = R2, trim R2 to boost CMRR
8
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SNOSBT2E – MAY 1999 – REVISED MARCH 2013
Figure 21. Low Drift Peak Detector with Bias Current Compensation
Adjust R for minimum drift
D3 low leakage diode
D1 added to improve speed
VS = ±15V
Figure 22. Universal State-Variable Filter
Tune Q through R0,
For predictable results: fO Q ≤ 4 × 104
Use Band Pass output to tune for Q
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LM148-N, LM248-N, LM348-N
SNOSBT2E – MAY 1999 – REVISED MARCH 2013
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Figure 23. A 1 kHz 4 Pole Butterworth
Use general equations, and tune each section separately
Q1stSECTION = 0.541, Q2ndSECTION = 1.306
The response should have 0 dB peaking
10
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SNOSBT2E – MAY 1999 – REVISED MARCH 2013
Figure 24. A 3 Amplifier Bi-Quad Notch Filter
Ex: fNOTCH = 3 kHz, Q = 5, R1 = 270k, R2 = R3 = 20k, R4 = 27k, R5 = 20k, R6 = R8 = 10k, R7 = 100k, C1 = C2 =
0.001 μF
Better noise performance than the state-space approach.
Figure 25. A 4th Order 1 kHz Elliptic Filter (4 Poles, 4 Zeros)
R1C1 = R2C2 = t
R′1C′1 = R′2C′2 = t′
fC = 1 kHz, fS = 2 kHz, fp = 0.543, fZ = 2.14, Q = 0.841, f′ P = 0.987, f′ Z = 4.92, Q′ = 4.403, normalized to ripple BW
Copyright © 1999–2013, Texas Instruments Incorporated
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LM148-N, LM248-N, LM348-N
SNOSBT2E – MAY 1999 – REVISED MARCH 2013
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Use the BP outputs to tune Q, Q′, tune the 2 sections separately
R1 = R2 = 92.6k, R3 = R4 = R5 = 100k, R6 = 10k, R0 = 107.8k, RL = 100k, RH = 155.1k,
R′1 = R′2 = 50.9k, R′4 = R′5 = 100k, R′6 = 10k, R′0 = 5.78k, R′L = 100k, R′H = 248.12k, R′f = 100k. All capacitors
are 0.001 μF.
Figure 26. Lowpass Response
Typical Simulation
Figure 27. LM148, LM741 Macromodel for Computer Simulation
For more details, see IEEE Journal of Solid-State Circuits, Vol. SC-9, No. 6, December 1974
12
o1
= 112IS = 8 × 10−16
o2
= 144*C2 = 6 pF for LM149
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SNOSBT2E – MAY 1999 – REVISED MARCH 2013
Connection Diagram
Figure 28. Top View
See Package Number J0014A, D0014A or NFF00014A
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SNOSBT2E – MAY 1999 – REVISED MARCH 2013
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REVISION HISTORY
Changes from Revision D (March 2013) to Revision E
•
14
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 13
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LM148J/PB
ACTIVE
CDIP
J
14
25
TBD
Call TI
Call TI
LM148J
LM348M
ACTIVE
SOIC
D
14
55
TBD
Call TI
Call TI
0 to 70
LM348M
LM348M/NOPB
ACTIVE
SOIC
D
14
55
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 70
LM348M
LM348MX
ACTIVE
SOIC
D
14
2500
TBD
Call TI
Call TI
0 to 70
LM348M
LM348MX/NOPB
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 70
LM348M
LM348N/NOPB
ACTIVE
PDIP
NFF
14
25
Green (RoHS
& no Sb/Br)
CU SN
Level-1-NA-UNLIM
0 to 70
LM348N
LM348N/PB
ACTIVE
PDIP
NFF
14
25
TBD
Call TI
Call TI
LM348N
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM348MX
SOIC
D
14
2500
330.0
16.4
6.5
9.35
2.3
8.0
16.0
Q1
LM348MX/NOPB
SOIC
D
14
2500
330.0
16.4
6.5
9.35
2.3
8.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM348MX
SOIC
D
14
2500
367.0
367.0
35.0
LM348MX/NOPB
SOIC
D
14
2500
367.0
367.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
NFF0014A
N0014A
N14A (Rev G)
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