WFP3205 Silicon N-Channel MOSFET Features ■ 110A,50V, RDS(on)(Max 8mΩ)@VGS=10V ■ Ultra-low Gate charge(Typical133nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 50 V Continuous Drain Current(@Tc=25℃) 110 A Continuous Drain Current(@Tc=100℃) 80 A 390 A ±20 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAR Repetitive Avalanche Energy (Note1) 20 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 5.0 V/ ns Total Power Dissipation(@Tc=25℃) 200 W Derating Factor above 25℃ 1.3 W/℃ -55~150 ℃ 300 ℃ PD TJ,Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 0.75 ℃/W RQCS Thermal Resistance , Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62 ℃/W Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFP3205 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Symbol IGSS V(BR)GSS IDSS Drain -source breakdown voltage V(BR)DSS Breakdown voltage Temperature △BVDSS/ Test Condition Min Type Max Unit - - ±100 nA ±30 - - V - - 10 µA 50 - - V - 0.057 - V/℃ VGS = ±30 V, VDS = 0 V IG=±10 µA,VDS=0V VDS=50V,V GS=0V ID=250 µA,VGS=0V ID=1mA, △TJ Referenced to 25℃ Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=60A - - 8.0 mΩ Forward Transconductance gfs VDS=25V,ID=60A 44 - - S Input capacitance Ciss VDS=25V, - 3247 - Reverse transfer capacitance Crss VGS=0V, - 211 - Output capacitance Coss f=1MHz - 781 - VDD=28V, - 101 - ID=60A - 14 - tf RG=4.5Ω - 65 - toff VGS=10V - 50 - - 133 146 - - 35 - - 54 Coefficient Rise time Turn-on time tr ton Switching time pF ns Fall time Turn-off time Total gate charge(gate-source (Note4,5) VDS=44V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=60A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 110 A Pulse drain reverse current IDRP - - - 390 A Forward voltage(diode) VDSF IDR=60A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=60A,VGS=0V, - 69 104 ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 143 215 µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=138uH IAS=60A,,RG=25Ω,Starting TJ=25℃ 3.ISD≤60A,di/dt≤207A/us,VDD<BVDSS, TJ≤150℃ 4.Pulse Test:Pulse Width≤400us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance WFP3205 Fig.1 On State Characteristics Fig.3 Transfer Characteristics Fig.2 On State Characteristics Fig.5 On-Resistance Variation vs Junction temperature 60 Fig.5 Capacitance Variation vs Drain Voltage Fig.6 Gate Charge Characteristics Steady, keep you advance 3/7 WFP3205 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case temperature Fig.9 Transient thermal Response Curve 4/7 Steady, keep you advance WFP3205 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance WFP3205 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance WFP3205 TO-220 Package Dimension Unit:mm 7/7 Steady, keep you advance