WINSEMI WFY5P03

5P03
WFY
WFY5
-30V P−Channel MOSFET
Features
■ -4.3A, -30V, RDS(on)(Max 58mΩ)@VGS=-4.5V
■ -2.5V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s
advanced MOS technology. This latest technology has
been especially designed to minimize on-state resistance,
have a high rugged avalanche characteristics. This devices is
specially well suited for Load/Power
Management
for
Portables
and
Computing, Charging Circuits and Battery
Protection
Absolute Maximum Ratings(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDSS
Drain Source Voltage
-30
V
VGSS
Gate-to-Source Voltage
±12
V
ID
Continuous Drain Current
-4.3
A
IDM
Drain Current Pulsed
-25
A
PD
Allowable Power Dissipation
Mounted on a ceramic board (1000mm2 × 0.8mm)
lunit
0.25
W
PT
Total Dissipation
Mounted on a ceramic board (1000mm × 0.8mm)
0.3
Tch
Channel Temperature
150
Tstg
Storage Temperature
-55~150
PW≤10us,duty cycle≤1%
2
℃
℃
Rev. A Jan 2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
P03-3
5P03
WFY
WFY5
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current(Note 4)
IGSS
VGS = ±12 V, VDS = 0 V
-
-
±100
nA
Drain cut−off current(Note 4)
IDSS
VDS =-30V, VGS = 0 V
-
-
-1
μA
Drain−source breakdown voltage
V(BR)DSS
ID =- 250 μA, VGS = 0 V
-30
-
-
V
Gate threshold voltage
VGS(th)
VDS = VGS ID =-250 μA
-0.6
-1.0
-1.3
V
-
52
58
Drain−source ON resistance
RDS(ON)
72
80
VGS =-4.5 V, ID = -3.5 A
mΩ
VGS =-2.5 V, ID =-2.5 A
Input capacitance
Ciss
VDS = -15V,
-
933
1200
Reverse transfer capacitance
Crss
VGS = 0 V,
-
81
-
Output capacitance
Coss
f = 1 MHz
-
108
-
-
5.2
-
VDS = -15V,
-
6.8
-
td(off)
RG = 6 Ω,
-
42
-
tf
RL=3.5 Ω
-
15
-
Qg
VGS = - 4.5V,
-
9.3
12.2
Gate−source charge
Qgs
VDS =-15 V,
-
1.5
-
Gate−drain (“miller”) Charge
Qgd
ID =-4.3 A
-
3.7
-
Diode Forward Voltage
VSD
IS= -1,VGS=0V
Turn-on Delay time
td(on)
Switching
Rise time
tr
time
Turn-off Delay time
(Note 5)
Turn−off Fall time
Total gate charge
VGS = 10 V,
pF
ns
-0.75
-1.0
nC
V
2 /5
Steady, keep you advance
5P03
WFY
WFY5
3 /5
Steady, keep you advance
5P03
WFY
WFY5
4 /5
Steady, keep you advance
5P03
WFY
WFY5
T-23 Package Dimension
SO
SOT
DIM
A
A1
B
C
D
E
F
G
H
I
J
MILLIMTERS
MIN
INCHES
MAX
MIN
0.95
1.90
2.60
1.40
2.80
1.00
0.00
0.35
0.10
0.30
50o
MAX
0.037
0.074
3.00
1.70
3.10
1.30
0.10
0.50
0.20
0.60
10o
0.102
0.055
0.110
0.039
0.000
0.014
0.004
0.012
50o
0.118
0.067
0.122
0.051
0.004
0.020
0.008
0.024
10o
5 /5
Steady, keep you advance