WINSEMI WSP20D100L

WSP20D100
hot
Power Sc
Sch
otttky Rec
ecttifier
Features
■ 20A(2×10A),100V
■ VF(max)=0.7V(@TJ=125℃)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High
frequency switch power supply and Free wheeling
diodes, polarity protection applications.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDRM
Repetitive peak reverse voltage
100
V
VDC
Maximum DC blocking voltage
100
V
IF(AV)
Average forward current
IFSM
Surge non repetitive forward current
200
A
TJ,
Junction Temperature
175
℃
Tstg
Storage Temperature
-40~150
℃
per diode
10
per device
20
A
Thermal Characteristics
Symbol
RQJC
Value
Parameter
Thermal Resistance, Junction-to-Case
Ordering Information
Order codes
Package
WSP20D100L
WSP20D100-HW
Min
Typ
Max
-
-
1.9
Units
℃/W
Marking
Halogen Free
Packaging
TO220C
P20D100L
NO
Tube
TO220HW
P20D100
NO
Tube
Rev.B Jan.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T02-2
WSP20D100
Electrical Characteristics (per diode)
Characteristics
Symbol
Test Condition
Tj = 25°C
Reverse leakage current
Forward voltage drop
IR
VR = VRRM
VF
IF= 10A
Min
Typ.
Max
Unit
-
-
10
μA
-
5
mA
Tj = 125°C
Tj = 25°C
-
0.78
0.85
Tj = 125°C
-
0.65
0.7
V
2/5
Steady, keep you advance
WSP20D100
g.1 Forward volta
ge drop versus for
ward
Fi
Fig
tag
forw
aximum values, per di
ode).
current (m
(ma
dio
age current versus ambient
Fig.3 Aver
era
er
ature (d=0.
5) (per diod
e)
temp
temper
era
0.5)
ode
g.2 Junct
ance versus reverse
Fi
Fig
ctiion capacit
ita
age appli
ed (t
ypic
al values, per diod
e).
volt
olta
pplie
(ty
pica
diode
akage current versus
Fig.4 Reverse le
lea
age appl
ypical values, per
reverse volt
lta
pliied (t
(ty
ode)..
di
dio
3/5
Steady, keep you advance
WSP20D100
TO-220 Package Dimension
Unit: mm
4 /5
Steady, keep you advance
WSP20D100
TO-220HW Package Dimension
5 /5
Steady, keep you advance