WSP30D100 Silicon Controlled Rectifiers Features � 30A(2×15A),100V � VF(max)=0.72V(@TJ=125℃) � Low power loss,high efficiency � Common cathode structure � Guard ring for over voltage protection, High reliability � Maximum Junction Temperature Range(175℃) General Description Dual center tap Schottky rectifiers suited for High frequency switch power supply and Free wheeling diodes, polarity protection applications. Absolute Maximum Ratings Symbol Parameter Value Units VDRM Repetitive Peak reverse Voltage 100 V VDC Maximum DC blocking Voltage 100 V IF(AV) Average forward current IFSM Per diode 15 Per device 30 A Surge non repetitive for ward current 275 A TJ Junction Temperature 175 °C TSTG Storage Temperature -40~150 °C Thermal Characteristics RQJC Value Parameter Symbol Thermal Resistance Junction to Case Ordering Information Order codes WSP30D100 WSP30D100-HW Min Typ Max - - 1.8 Units ℃/W Package Marking Halogen Free Packaging TO220C P30D100 NO Tube TO220HW P30D100 NO Tube Rev.A Nov.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WSP30D100 Electrical Characteristics (per diode diode)) Characteristics Symbol Test Conditions Reverse leakage current IR VR=VRRM Forward voltage drop VF IF=15A Min Typ Max Units Tj=25℃ - - 10 μA Tj=125℃ - - 5 mA Tj=25℃ - 0.78 0.85 Tj=125℃ - 0.66 0.72 V *Notes:tp =380µs, δ<2% 2/5 Steady, keep you advance WSP30D100 Fig.1Forward Voltage Drop Versus Forward current(maximum Values ,per diode) Fig .2 Junction Capacitance Versus reverse Voltage applied (typical Values,per diode) Fig. 3 Average Current versus ambient temperature (d=0.5)(per diode) Fig. 4 Reverse leakage current versus reverse voltage applied ( typical values,per diode) 3/5 Steady, keep you advance WSP30D100 -220 Package Dimension TO TO-220 Unit: mm 4/5 Steady, keep you advance WSP30D100 -220HW Package Dimension TO TO-220HW Unit:mm 5/5 Steady, keep you advance