WSP20D65 ho Power Sc Scho hotttky Rect Rectiifier Features ■ 20A(1×10A),65V ■ VF(max)=0.68V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■ Guard ring for over voltage protection, High reliability ■ Maximum Junction Temperature Range(175℃) General Description Dual center tap Schottky rectifiers suited for High frequency switch power supply and Free wheeling diodes, polarity protection applications. A1 K TO220 A2 Absolute Maximum Ratings Symbol Parameter Value Units VDRM Repetitive peak reverse voltage 65 V VDC Maximum DC blocking voltage 65 V IF(RMS) RMS forward current 30 A IF(AV) Average forward current IFSM Surge non repetitive forward current 150 A PARM Repetitive peak avalanche power 5800 W IRRM Repetitive peak reverse current 1 A dv/dt Critical rate of rise of reverse voltage 10000 V/ns TJ, Junction Temperature 175 ℃ Tstg Storage Temperature -40~150 ℃ per diode 10 per device 20 A Thermal Characteristics Symbol Parameter RQJC Thermal Resistance, Junction-to-Case RQCS Thermal Resistance, Case-to-Sink Value Units Min Typ Max - - 1.9 ℃/W 0.1 - - ℃/W Rev. C Nov.2008 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T01-3 WSP20D65 e) Electrical Characte Characterristics (per diod diode Characteristics Symbol Test Condition Tj = 25°C Reverse leakage current IR Min Typ. Max Unit - - 30 μA - 30 mA VR = VRRM Tj = 125°C Tj = 25°C - 0.67 0.76 Tj = 125°C - 0.63 0.68 Tj = 25°C - - 0.74 Tj = 125°C - 0.62 0.7 IF= 10A Forward voltage drop VF V IF= 20A Note :tp = 380 μs, δ < 2% 2 /4 Steady, keep you advance WSP20D65 TJ（℃） ward voltage drop versus for ward Fig.1 For Forw forw current (maximum values, per diode). Fig.3 Junction capacitance versus reverse ypical values, per diode). voltage applied (t (ty Fig.2 Average current versus ambient temperature (d=0.5) (per diode) Fig.4 Reverse leakage current versus ypi cal values, per reverse voltage applied (t (ty pic diode).. 3 /4 Steady, keep you advance WSP20D65 TO-220 Package Dimension Unit: mm 4 /4 Steady, keep you advance