ACE2341 Technology P-Channel Enhancement Mode MOSFET Description The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • • -20V/-3.3A, RDS(ON)=45mΩ@VGS=-4.5V -20V/-2.8A, RDS(ON)= 55mΩ@VGS=-2.5V -20V/-2.3A, RDS(ON)= 65mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application • • • • • • • Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -4.0 -2.8 A Pulsed Drain Current IDM -12 A Continuous Source Current (Diode Conduction) IS -1.0 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 140 ℃/W VER 1.2 1 ACE2341 Technology P-Channel Enhancement Mode MOSFET Packaging Type SOT-23-3 3 Pin 1 2 3 1 Description Gate Source Drain 2 Ordering information Selection Guide ACE2341 XX + H Halogen - free Pb - free BM: SOT-23-3 VER 1.2 2 ACE2341 Technology P-Channel Enhancement Mode MOSFET Electrical Characteristics (TA=25℃, Unless otherwise noted) Parameter Symbol Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(ON) Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Conditions Min. Typ Max. VGS=0V, ID=-250uA -20 VDS=VGS, ID=-250uA -0.35 -0.9 VDS=0.V, VGS=±12V ±100 VDS=-20V, VGS=0V -1 -10 VDS=-20V, VGS=0V TJ=55℃ VDS≦-5V, VGS=-4.5V -6 VGS=-4.5V, ID=-3.3A 0.036 0.045 VGS=-2.5V, ID=-2.8A 0.045 0.055 VGS=-1.8V, ID=-2.3A 0.055 0.065 VDS=-5.0V, ID=-3.3A 3 IS=-1.6A, VGS=0V -0.8 -1.2 VDS=-6V, VGS=-4.5V, ID≣-3.3A VDS=-6V, VGS=0V, f=1MHz VDD=-6V, RL=6Ω ID≡-1.0A, VGEN=-4.5V RG=6Ω 8 1.2 2.2 700 160 120 15 35 60 40 Unit V nA uA A Ω S V 13 nC pF 25 55 90 60 ns VER 1.2 3 ACE2341 Technology Typical P-Channel Enhancement Mode MOSFET Characteristics Output Characteristics VDS – Drain to Source Voltage (V) On-Resistance vs. Drain Current ID – Drain Current (A) Transfer Characteristics VGS – Gate to Source Voltage (V) Capacitance VDS – Drain to Source Voltage (V) VER 1.2 4 ACE2341 Technology Typical P-Channel Enhancement Mode MOSFET Characteristics Gate Charge Og Total Gate Charge (nC) Normalized On-Resistance vs. Junction Temperature TJ – Junction Temperature (℃) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD Source to Drain Voltage (V) VGS – Gate to Source Voltage (V) VER 1.2 5 ACE2341 Technology Typical P-Channel Enhancement Mode MOSFET Characteristics Threshold Voltage Single Pulse Power TJ – Temperature Time(sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration(sec) VER 1.2 6 ACE2341 Technology P-Channel Enhancement Mode MOSFET Packing Information SOT-23-3 VER 1.2 7 ACE2341 Technology P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 8