AWU6608 HELP3 Band 8 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: (R99 waveform) AWU6608 40 % @ POUT = +28.5 dBm 20 % @ POUT = +17 dBm • Low Quiescent Current: 8 mA • Low Leakage Current in Shutdown Mode: <1 µA • Internal Voltage Regulator • Integrated “daisy chainable” directional couplers with CPLIN and CPLOUT Ports • Optimized for a 50 Ω System M45 Package 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Low Profile Miniature Surface Mount Package • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • WCDMA/HSPA 900 MHz Band Wireless Handsets and Data Devices PRODUCT DESCRIPTION The AWU6608 HELP3TM PA is a 3rd generation WCDMA product for UMTS handsets. This PA incorporates ANADIGICS’ HELP3TM technology to provide low power consumption without the need for an external voltage regulator. A “daisy chainable” directional coupler is integrated in the module thus eliminating the need of external couplers. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. There are two selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, which increases handset talk and standby time. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. GNDatSlug(pad) VBATT 1 RFIN 2 VMODE2 (N/C) 3 VMODE1 VEN 10 VCC 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL BiasControl VoltageRegulation Figure 1: Block Diagram 08/2009 AWU6608 VBATT 1 10 RFIN 2 9 RFOUT VMODE2 (N/C) 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RFInput 3 2 VMODE2 (N/C) No Connection 4 VMODE1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RFOutput 10 VCC Mode Control Voltage 1 PAEnableVoltage Coupler Output Supply Voltage PRELIMINARY DATA SHEET - Rev 1.1 08/2009 VCC AWU6608 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT SupplyVoltage(VCC) 0 +5 V BatteryVoltage(VBATT) 0 +6 V ControlVoltages(VMODE1,VENABLE) 0 +3.5 V RFInputPower(PIN) - +10 dBm -40 +150 °C StorageTemperature(TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT OperatingFrequency(f) 880 - 915 MHz SupplyVoltage(VCC) +3.2 +3.4 +4.2 V POUT < +28.5 dBm EnableVoltage(VENABLE) +2.15 0 +2.4 - +3.1 +0.5 V PA "on" PA"shutdown" ModeControlVoltage(VMODE1) +2.15 0 +2.4 - +3.1 +0.5 V LowBiasMode HighBiasMode 28.0(1) 27.0(1) 16.5(1) 15.5(1) 28.5 27.5 17 16 28.5 27.5 17 16 dBm -30 - +90 °C RFOutputPower(POUT) R99WCDMA,HPM HSPA(MPR=0),HPM R99WCDMA,LPM HSPA(MPR=0),LPM CaseTemperature(TC) COMMENTS 3GPPTS34.121-1,Rel7 TableC.11.1.3 The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at Vcc = +3.2 V, Pout is derated by 0.5 dB. PRELIMINARY DATA SHEET - Rev 1.1 08/2009 3 AWU6608 Table 4: Electrical Specifications (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +2.4 V, 50 Ω system, R99 waveform) PARAMETER MIN TYP MAX UNIT - 27 15 - dB - -41 -42 -38 -38 ACLR2at10MHzoffset - -55 -55 -48 -48 Power-AddedEfficiency(1) - 40 20 QuiescentCurrent(Icq) LowBiasMode - Mode Control Current COMMENTS POUT VMODE1 +28.5 dBm +17 dBm 0V 2.4 V +28.5 dBm +17 dBm 0V 2.4 V dBc +28.5 dBm +17 dBm 0V 2.4 V - % +28.5 dBm +17 dBm 0V 2.4 V 8 - mA VMODE1 = +2.4 V - 0.3 - mA through VMODEpin,VMODE1 = +2.4 V EnableCurrent - 0.3 - mA through VENABLE pin BATT Current - 3.0 - mA through VBATTpin,VMODE1 = +2.4 V LeakageCurrent - <1 - µA VBATT=+4.2V,VCC=+4.2V, VENABLE=0V,VMODE1 = 0 V - -135 - dBm/Hz POUT <+28.5dBm,VMODE1 = 0V - -143 - dBm/Hz POUT <17dBm,VMODE1 = +2.4 V Harmonics 2fo 3fo,4fo - -35 -45 -30 -35 dBc Input Impedance - - - VSWR CouplingFactor - 20 - dB Directivity - 20 - dB Gain ACLR1at5MHzoffset(1) NoiseinReceiveBand(2) SpuriousOutputLevel (allspuriousoutputs) Loadmismatchstresswithno permanent degradation or failure dBc - - -70 dBc POUT < +28.5 dBm In-bandloadVSWR<5:1 Out-of-bandloadVSWR<10:1 Appliesoveralloperating conditions 8:1 - - VSWR Appliesoverfulloperatingrange Notes: (1) ACLR and Efficiency measured at 897.5 MHz. (2) Noise measured at 925 MHz to 960 MHz. 4 POUT < +28.5 dBm PRELIMINARY DATA SHEET - Rev 1.1 08/2009 AWU6608 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VENABLE and VMODE1 voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to VMODE1. The Bias Control table lists the recommended modes of operation for various applications. VMODE2 is not necessary for this PA. Two operating modes are available to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At around 17 dBm output power, the PA can be “Mode Switched” to Medium/ Low power mode for lowest quiescent current consumption. Table 5: Bias Control (UMTS) POUT LEVELS BIAS MODE VENABLE VMODE1 VCC VBATT UMTS-med/lowpower (LowBiasMode) < +17 dBm Low +2.4 V +2.4 V 3.2 - 4.2 V > 3.2 V UMTS-highpower (HighBiasMode) >+16dBm High +2.4 V 0V 3.2 - 4.2 V > 3.2 V OptionallowerVCCinlow powermode < +7 dBm Low +2.4 V +2.4 V 1.5 V > 3.2 V - Shutdown 0V 0V 3.2 - 4.2 V > 3.2 V APPLICATION Shutdown PRELIMINARY DATA SHEET - Rev 1.1 08/2009 5 AWU6608 CHARACTERIZATION DATA (WCDMA Rel 99, VCC = 3.4 V, VEN = 2.4 V, T = 25 8C) Figure 4: Current vs Output Power Figure 3: Gain vs Output Power 550 30 500 25 450 Gain (dB) Current (mA) 897.5MHz 20 880MHz 897.5MHz 400 880MHz 915MHz 15 10 915MHz 350 300 250 200 150 100 5 50 0 -10 -5 0 5 10 15 20 25 0 30 -10 -5 0 5 10 15 20 25 30 Pout (dBm) Pout (dBm) Figure 6: ACLR2 (10 MHz offset) vs Output Figure 5: ACLR1 (5 MHz offset) vs Output Power -30 -40 -45 -35 880MHz 880MHz -50 897.5MHz 897.5MHz 915MHz 915MHz ACLR1 (dBc) -40 ACLR2 (dBc) -55 -45 -60 -65 -50 -70 -55 -75 -60 -10 -5 0 5 10 15 20 25 30 Pout (dBm) -80 -10 -5 0 Figure 7: Efficiency vs Output Power 40 35 880MHz 897.5MHz PAE (%) 915MHz 25 20 15 10 5 0 -10 -5 0 5 10 15 20 25 30 Pout (dBm) 6 10 Pout (dBm) 45 30 5 PRELIMINARY DATA SHEET - Rev 1.1 08/2009 15 20 25 30 AWU6608 CHARACTERIZATION DATA (HSPA, Rel 7, VCC = 3.4 V, VEN = 2.4 V, T = 25 8C) Figure 9: Current vs Output Power Figure 8: Gain vs Output Power 30 550 500 25 450 880MHz 915MHz Current (mA) Gain (dB) 20 880MHz 897.5MHz 400 897.5MHz 15 10 915MHz 350 300 250 200 150 100 5 50 0 -10 -5 0 5 10 15 20 25 0 30 -10 -5 0 5 Pout (dBm) 10 15 20 25 30 Pout (dBm) Figure 11: ACLR2 (10 MHz offset) vs Output Figure 10: ACLR1 (5 MHz offset) vs Output -40 -30 -45 -35 880MHz 880MHz -50 897.5MHz 915MHz 915MHz -40 ACLR2 (dBc) ACLR1 (dBc) 897.5MHz -45 -50 -55 -60 -65 -70 -55 -75 -80 -60 -10 -5 0 5 10 15 20 25 30 -10 -5 0 5 10 15 20 25 30 Pout (dBm) Pout (dBm) Figure 12: Efficiency vs Output Power 40 35 30 880MHz 897.5MHz PAE (%) 25 915MHz 20 15 10 5 0 -10 -5 0 5 10 15 20 25 30 Pout (dBm) PRELIMINARY DATA SHEET - Rev 1.1 08/2009 7 AWU6608 VBATT VCC C6 2.2µF C1 33pF C2 0.1µF GNDatslug 1 2 RFIN 3 4 VMODE1 5 VEN VBATT VCC RFIN RFOUT 10 9 VMODE2 (N/C) CPLIN 8 GND 7 VMODE1 CPLIN CPLOUT 6 VEN VCC GND GND VBATT Figure 13: Evaluation Circuit Schematic RFIN C1 RFOUT C3 C2 C4 CPLOUT VMODE1 VEN GND GND VMODE2 C5 CPLIN Figure 14: Evaluation Board Layout 8 C4 68pF RFOUT CPLOUT C5 0.01 µF C6 C3 2.2µF ceramic PRELIMINARY DATA SHEET - Rev 1.1 08/2009 AWU6608 The AWU6608 power amplifier module is based on ANADIGICS proprietary HELP3™ technology. The PA is designed to operate up to 17 dBm in the low power mode, thus eliminating the need for three gain state, while still maintaining low quiescent current and high efficiency in low and medium power levels. The PA can still be operated as 3 gain state device if the customer chooses to. The directional “daisy chainable” coupler is integrated within the PA module, therefore there is no need for external couplers. AWU6608 requires only two calibration sweeps for system calibration, thus saving calibration time. Figure 16 shows one application example on mobile board. C1 and C2 are RF bypass caps and should be placed nearby pin 1 and pin 10. Bypass caps C9 and C5 may not be needed. Also a “T” matching topology is recommended at PA RFIN and RFOUT ports to provide matching between input TX Filter and Duplexer / Isolator. Figure 15: PDF and Current The AWU6608 has an integrated voltage regulator, which eliminates the need for an external constant voltage source. The PA is turn on/off is controlled by VEN pin. A single VMODE control logic (VMODE1) is needed to operate this device. 35.4 mA Average Current over DG09 Profile 0.150 500 0.140 DG09 PDF 0.130 AWU6608 (mA) 0.120 450 400 0.110 350 0.100 DG09 PDF The DG09 power distribution (figure 15) highlights the need to improve the current consumption in low and medium power level. The AWU6608 is designed to operate up to 17 dBm in the low power mode with very low quiescent current. Current consumption for AWU6608 is also plotted in the figure 5. 0.090 300 0.080 250 0.070 0.060 200 0.050 150 0.040 0.030 100 0.020 50 0.010 0.000 -60 AWU6601 Current (mA) HELP3 0 -50 -40 -30 -20 -10 0 10 20 30 Antenna Power (dBm) Figure 16: Typical Application Circuit PRELIMINARY DATA SHEET - Rev 1.1 08/2009 9 AWU6608 PACKAGE OUTLINE Figure 17: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Marking Code (BBB) 6608R LLLLNN BBBCC Part Number Lot Number Country Code (CC) Figure 18: Branding Specification - M45 Package 10 PRELIMINARY DATA SHEET - Rev 1.1 08/2009 AWU6608 PCB AND STENCIL DESIGN GUIDELINE Figure 19: Recommended PCB Layout Information PRELIMINARY DATA SHEET - Rev 1.1 08/2009 11 AWU6608 COMPONENT PACKAGING Pin 1 Figure 6: Tape & Reel Packaging Table 6: Tape & Reel Dimensions 12 PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA 3mmx3mmx1mm 12 mm 4 mm 2500 7" PRELIMINARY DATA SHEET - Rev 1.1 08/2009 AWU6608 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION AWU6608RM45Q7 -30 oCto+90oC RoHSCompliant10Pin 3mmx3mmx1mm TapeandReel,2500piecesperReel Surface Mount Module AWU6608RM45P9 -30 oCto+90oC RoHSCompliant10Pin 3mmx3mmx1mm PartialTapeandReel Surface Mount Module COMPONENT PACKAGING ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 13 PRELIMINARY DATA SHEET - Rev 1.1 08/2009