AON3402 20V N-Channel MOSFET General Description Product Summary The AON3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application. VDS (V) = 20V ID = 12.6A (VGS = 4.5V) RDS(ON) < 13mΩ (VGS = 4.5V) RDS(ON) < 17mΩ (VGS = 2.5V) RDS(ON) < 26mΩ (VGS = 1.8V) ESD Rating: 2000V HBM 100% Rg Tested DFN 3x3 Top View Bottom View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current B Junction and Storage Temperature Range Maximum Junction-to-Lead C ±12 V ID 10 IDM 40 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2 TJ, TSTG t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 12.6 TA=70°C TA=25°C Power Dissipation A Maximum 20 RθJA RθJL Typ 30 65 20 °C Max 40 80 25 Units °C/W °C/W °C/W www.aosmd.com AON3402 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=55°C TJ=125°C 13 18 mΩ mΩ 1 V 4.8 A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=4.5V, VDS=10V, ID=12A Gate Source Charge 10.3 14.4 mΩ IS Qgs V A 17 IS=1A,VGS=0V Gate resistance 1 26 Diode Forward Voltage Rg 0.78 14.3 VSD Reverse Transfer Capacitance V 21.7 VDS=5V, ID=12A Output Capacitance µA VGS=2.5V, ID=10.5A Forward Transconductance Crss µA VGS=1.8V, ID=8.5A gFS Coss 25 10 VGS=4.5V, ID=12A Units V 10 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IDSS RDS(ON) Typ 37 0.73 S 1810 pF 232 pF 200 pF 1.6 Ω 17.9 nC 1.5 nC Qgd Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 2.5 ns tr Turn-On Rise Time 7.2 ns VGS=10V, VDS=10V, RL=1.0Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs IF=12A, dI/dt=100A/µs Body Diode Reverse Recovery Time 49 ns 10.8 ns 20.2 ns nC 8 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev2: Nov. 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10 35 2.5V 4.5V VDS=5V 2V 25 30 20 ID(A) ID (A) 25 20 15 15 10 10 125°C VGS=1.5V 5 5 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 25 1.6 Normalized On-Resistance VGS=1.8V RDS(ON) (mΩ ) 20 VGS=2.5V 15 VGS=4.5V 10 5 VGS=4.5V ID=12A 1.4 VGS=2.5V ID=10.5A 1.2 VGS=1.8V ID=8.5A 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+01 ID=12A 35 1.0E+00 125°C 30 1.0E-01 25 20 IS (A) RDS(ON) (mΩ ) 2.5 125°C 1.0E-02 25°C 15 1.0E-03 10 25°C 1.0E-04 5 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON3402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=12A 2500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 2000 1500 1000 Coss 500 Crss 0 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 TJ(Max)=150°C TA=25°C 100µs 1ms 10µs 30 Power (W) RDS(ON) limited ID (Amps) 10.0 10 10ms 1.0 1s 0.1s 10 TJ(Max)=150°C TA=25°C 10s DC 0 0.001 0.1 0.1 20 1 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=80°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 0.001 0.00001 Ton 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com