AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1702L is Pb-free (meets ROHS & Sony 259 specifications). AOL1702L is a Green Product ordering option. AOL1702 and AOL1702L are electrically identical. TM Ultra SO-8 Top View VDS (V) = 30V ID =70A (VGS = 10V) RDS(ON) < 5.8mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Fits SOIC8 footprint ! D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode D S Bottom tab connected to drain G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Maximum 30 Units V ±12 V G 70 TC=25°C Continuous Drain Current B Pulsed Drain Current Continuous Drain CurrentA A 52 ID IDM TC=100°C C 100 TA=25°C 21 A 17 Avalanche Current C IDSM IAR 30 A Repetitive avalanche energy L=0.3mH C EAR 135 mJ TA=70°C TC=25°C Power Dissipation B Power Dissipation A PD TC=100°C TA=25°C Junction and Storage Temperature Range 5 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 3.2 TJ, TSTG t ≤ 10s Steady-State Steady-State W 29 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient D Maximum Junction-to-Case 58 RθJA RθJC Typ 20 50 2.1 °C Max 25 60 2.6 Units °C/W °C/W °C/W www.aosmd.com AOL1702 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=250uA, VGS=0V VDS=24V, VGS=0V 30 20 Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 100 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Units V TJ=125°C Static Drain-Source On-Resistance Max 0.1 VGS(th) RDS(ON) Typ 0.1 µA 1.85 2.4 V 4.8 5.8 7.2 9.0 5.9 7.2 A 110 0.37 4000 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=20A mΩ mΩ S 0.5 V 55 A 5000 pF 520 pF 217 VGS=0V, VDS=0V, f=1MHz mA pF 0.6 0.9 59 77 Ω 27 nC 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge 11 nC tD(on) Turn-On DelayTime 9 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 9 ns 37 ns 8 ns IF=20A, dI/dt=300A/µs 16 Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 22 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0:Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 4.5V ID(A) ID (A) 20 10V 60 VDS=5V 25 3.5V 80 125° 15 40 25°C 10 VGS=3V 20 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 2 VGS=4.5V 6 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 7 5 VGS=10V 4 3 ID=20A 1.8 VGS=10V 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 15 ID=20A 1.0E+01 12 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 2 125°C 9 25°C 6 25°C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 3 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 6000 VGS (Volts) Capacitance (pF) Vds=15V ID=20A 8 6 4 2 5000 Ciss 4000 3000 2000 Crss 1000 Coss 0 0 0 10 20 30 40 50 0 60 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 120 100 TJ(Max)=175°C TC=25°C 10µs RDS(ON) limited 10 0.1ms DC 1ms 10ms 1 TJ(Max)=175°C TC=25°C 80 60 0.1 0.01 0.01 100 Power (W) ID (Amps) 5 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 40 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK=TC+PD.ZθJC.RθJC RθJC=2.6°C/W Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 PD Ton T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 Power Dissipation (W) ID(A), Peak Avalanche Current 160 120 TA=25°C 80 TA=150°C 40 0 0.000001 60 40 20 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 T CASE (°C) Figure 13: Power De-rating (Note B) 80 100 60 80 Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 40 TJ(Max)=150°C TA=25°C 60 40 20 20 0 0 25 50 75 100 125 150 0 0.01 175 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note H) T CASE (°C) Figure 14: Current De-rating (Note B) 0.1 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 PD Ton T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 1.0E-02 0.8 20A IR (A) VSD(V) VDS=24V 1.0E-03 VDS=12V 1.0E-04 1.0E-05 0.6 0 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 50 125ºC 25ºC 15 15 12 9 20 2.5 125ºC 9 Irm 25ºC 6 1 5 10 15 20 25 S 3 0 30 0 0 5 Is (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=20A 25ºC 15 0 0 200 25ºC 400 600 800 1000 0 1200 di/dt (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 1.5 15 12 25ºC 6 125ºC 3 Irm 5 Is=20A 2 9 3 10 trr (ns) 6 Irm (A) 125º Qrr 20 125ºC 18 9 25 30 21 25ºC 30 25 2.5 24 12 35 20 27 125ºC 40 15 S 45 10 Is (A) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 15 50 0.5 125ºC 0 0 1.5 25ºC 3 0 2 25ºC trr 6 10 Qrr (nC) 50 di/dt=1000A/us 12 125ºC Qrr 18 trr (ns) 40 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature Irm (A) di/dt=1000A/us 0 S 60 Qrr (nC) IS=1A 0.2 0 30 5A 0.4 1.0E-06 50 10A 0 0 trr 1 S 0.5 0 600 800 1000 1200 di/dt (A) Figure 22: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt 200 400 www.aosmd.com