CD74HC125-Q1 HIGH-SPEED CMOS LOGIC QUAD BUFFER WITH 3-STATE OUTPUTS SCLS579A − APRIL 2004 − REVISED SEPTEMBER 2008 D D D D D D D D D Qualified for Automotive Applications 3-State Outputs Separate Output Enable Inputs Fanout (Over Temperature Range) − Standard Outputs . . . 10 LSTTL Loads − Bus Driver Outputs . . . 15 LSTTL Loads Extended Temperature Performance of −40°C to 125°C Balanced Propagation Delay and Transition Times Significant Power Reduction, Compared to LSTTL Logic ICs 2-V to 6-V VCC Operation High Noise Immunity NIL or NIH = 30% of VCC at VCC = 5 V M OR PW PACKAGE (TOP VIEW) 1OE 1A 1Y 2OE 2A 2Y GND 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 4OE 4A 4Y 3OE 3A 3Y description/ordering information The CD74HC125 contains four independent 3-state buffers, each having its own output enable input which, when HIGH, puts the output in the high-impedance state. ORDERING INFORMATION{ −40°C 40°C to 125°C ORDERABLE PART NUMBER PACKAGE‡ TA TOP-SIDE MARKING SOIC − M Reel of 2500 CD74HC125QM96Q1 HC125Q TSSOP − PW Reel of 2000 CD74HC125QPWRQ1 HC125Q † For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. ‡ Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. FUNCTION TABLE (each gate) INPUTS A OE OUTPUT Y H L H L L L X H Z Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 2008, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 CD74HC125-Q1 HIGH-SPEED CMOS LOGIC QUAD BUFFER WITH 3-STATE OUTPUTS SCLS579A − APRIL 2004 − REVISED SEPTEMBER 2008 logic diagram (positive logic) 1OE 1A 2OE 2A 1 2 3OE 3 1Y 3A 4 5 4OE 6 2Y 4A 10 9 8 3Y 13 12 11 4Y absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V Input clamp current, IIK (VI < −0.5 V or VI > VCC + 0.5 V) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA Output clamp current, IOK (VO < −0.5 V or VO > VCC + 0.5 V) (see Note 1) . . . . . . . . . . . . . . . . . . . . . ±20 mA Continuous output current, IO (VO > −0.5 or VO < VCC + 0.5 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35 mA Output source or sink current per output pin, IO (VO > −0.5 or VO < VCC + 0.5 V) . . . . . . . . . . . . . . . . ±25 mA Continuous current through VCC or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±70 mA Package thermal impedance, θJA (see Note 2): M package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86°C/W PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113°C/W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. The package thermal impedance is calculated in accordance with JESD 51-7. recommended operating conditions (see Note 3) VCC Supply voltage VIH High-level High level input voltage VCC = 2 V VCC = 4.5 V VCC = 6 V MIN NOM MAX 2 5 6 V 4.2 0.5 VCC = 4.5 V Low-level Low level input voltage V 1.5 3.15 VCC = 2 V VIL UNIT 1.35 VCC = 6 V V 1.8 VI Input voltage 0 VCC V VO Output voltage 0 VCC V tt Input transition rise/fall time VCC = 2 V TA 1000 VCC = 4.5 V 500 VCC = 6 V 400 Operating free-air temperature −40 125 ns °C NOTE 3: All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 CD74HC125-Q1 HIGH-SPEED CMOS LOGIC QUAD BUFFER WITH 3-STATE OUTPUTS SCLS579A − APRIL 2004 − REVISED SEPTEMBER 2008 electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER IO (mA) TEST CONDITIONS CMOS loads VOH VI = VIH or VIL TTL loads CMOS loads VOL VI = VIH or VIL TTL loads II VI = VCC or GND ICC VI = VCC or GND IOZ VI = VIL or VIH VCC TA = 25°C MIN TYP MIN −0.02 2V 1.9 1.9 −0.02 4.5 V 4.4 4.4 −0.02 6V 5.9 5.9 3.7 MAX UNIT V −6 4.5 V 3.98 −7.8 6V 5.48 0.02 2V 0.1 0.1 0.02 4.5 V 0.1 0.1 0.02 6V 0.1 0.1 6 4.5 V 0.26 0.4 7.8 6V 0.26 0.4 6V ±0.1 ±1 µA 6V 8 160 µA 6V ±0.5 ±10 µA 10 10 pF 20 20 pF 0 5.2 CI CO MAX 3−state V switching characteristics over recommended operating free-air temperature range (unless otherwise noted) (see Figure 1) PARAMETER tpd FROM (INPUT) A TO (OUTPUT) Y CONDITIONS OE Y TA = 25°C MIN TYP tt OE Y Y MIN MAX 5V 2V 100 150 CL = 50 pF 4.5 V 20 30 6V 17 26 2V 125 190 4.5 V 25 38 21 32 CL = 50 pF 5V 5V 2V 125 190 CL = 50 pF 4.5 V 25 38 6V 21 32 POST OFFICE BOX 655303 ns 10 2V 60 90 4.5 V 12 18 6V 10 15 • DALLAS, TEXAS 75265 ns 10 CL = 15 pF CL = 50 pF p UNIT 8 6V tdis MAX CL = 15 pF CL = 15 pF ten VCC ns ns 3 CD74HC125-Q1 HIGH-SPEED CMOS LOGIC QUAD BUFFER WITH 3-STATE OUTPUTS SCLS579A − APRIL 2004 − REVISED SEPTEMBER 2008 operating characteristics, TA = 25°C, VCC = 5V PARAMETER Cpd TEST CONDITIONS Power dissipation capacitance per gate (see Note 4) No load NOTE 4: Cpd is used to determine the dynamic power consumption, per channel. PD = VCC2 fI (Cpd + CL) fI = input frequency CL = output load capacitance VCC = supply voltage 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYP 29 UNIT pF CD74HC125-Q1 HIGH-SPEED CMOS LOGIC QUAD BUFFER WITH 3-STATE OUTPUTS SCLS579A − APRIL 2004 − REVISED SEPTEMBER 2008 PARAMETER MEASUREMENT INFORMATION VCC PARAMETER Test Point From Output Under Test S1 ten RL CL (see Note A) tdis S2 tPZH RL 1 kΩ CL 1 kΩ 50 pF tPLZ tpd or tt −− Output Control (Low-Level Enabling) 50% S2 Open Closed Closed Open Open Closed Closed Open Open Open 50 pF tPZL tPHZ S1 50 pF LOAD CIRCUIT VCC Input 50% 50% 0V tPLH In-Phase Output 50% 10% tPHL 90% VOH 50% 10% V OL tf 90% tr tPHL Out-of-Phase Output 90% tPLH 50% 10% 50% 10% 90% VOH tr VOLTAGE WAVEFORMS PROPAGATION DELAY AND OUTPUT TRANSITION TIMES 0V tPZL VOL tf VCC 50% Output Waveform 1 (See Note B) tPLZ 10% tPZH Input 50% 10% 90% VCC 90% 50% 10% 0 V tr Output Waveform 2 (See Note B) ≈VCC ≈VCC 50% VOL tPHZ 50% 90% VOH ≈0 V tf VOLTAGE WAVEFORM INPUT RISE AND FALL TIMES VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMES FOR 3-STATE OUTPUTS NOTES: A. CL includes probe and test-fixture capacitance. B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control. C. Phase relationships between waveforms were chosen arbitrarily. All input pulses are supplied by generators having the following characteristics: PRR ≤ 1 MHz, ZO = 50 Ω, tr = 6 ns, tf = 6 ns. D. The outputs are measured one at a time, with one input transition per measurement. E. tPLZ and tPHZ are the same as tdis. F. tPZL and tPZH are the same as ten. G. tPLH and tPHL are the same as tpd. Figure 1. Load Circuit and Voltage Waveforms POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2012 PACKAGING INFORMATION Orderable Device Status (1) CD74HC125QM96G4Q1 ACTIVE Package Type Package Drawing SOIC Pins Package Qty D 14 2500 Green (RoHS & no Sb/Br) Eco Plan (2) TBD Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) CU NIPDAU Level-1-260C-UNLIM CD74HC125QM96Q1 OBSOLETE SOIC D 14 CD74HC125QPWRG4Q1 ACTIVE TSSOP PW 14 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Call TI Call TI CD74HC125QPWRQ1 ACTIVE TSSOP PW 14 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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OTHER QUALIFIED VERSIONS OF CD74HC125-Q1 : Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2012 • Catalog: CD74HC125 • Military: CD54HC125 NOTE: Qualified Version Definitions: • Catalog - TI's standard catalog product • Military - QML certified for Military and Defense Applications Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing CD74HC125QPWRG4Q1 TSSOP PW 14 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2000 330.0 12.4 Pack Materials-Page 1 6.9 B0 (mm) K0 (mm) P1 (mm) 5.6 1.6 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CD74HC125QPWRG4Q1 TSSOP PW 14 2000 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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