TI UCD7100PWP

UCD7100
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SLUS651C – MARCH 2005 – REVISED MAY 2010
Digital Control Compatible Single Low-Side ±4-A MOSFET Driver with Current Sense
Check for Samples: UCD7100
FEATURES
DESCRIPTION
•
•
•
•
•
The UCD7100 is a member of the UCD7K family of
digital control compatible drivers for applications
utilizing digital control techniques or applications
requiring fast local peak current limit protection.
1
2
•
•
•
•
•
•
•
Adjustable Current Limit Protection
3.3-V, 10-mA Internal Regulator
DSP/µC Compatible Inputs
Single ±4-A TrueDrive™ High Current Driver
10-ns Typical Rise and Fall Times with 2.2-nF
Loads
25-ns Input-to-Output Propagation Delay
25-ns Current Sense to Output Delay
Programmable Current Limit Threshold
Digital Output Current Limit Flag
4.5-V to 15-V Supply Voltage Range
Rated from -40°C to 105°C
Lead(Pb)-Free Packaging
APPLICATIONS
•
•
•
•
Digitally Controlled Power Supplies
DC/DC Converters
Motor Controllers
Line Drivers
The UCD7100 is a low-side ±4-A high-current
MOSFET gate driver. It allows the digital power
controllers such as UCD9110 or UCD9501 to
interface to the power stage in single ended
topologies. It provides a cycle-by-cycle current limit
function with programmable threshold and a digital
output current limit flag which can be monitored by
the host controller. With a fast 25-ns cycle-by-cycle
current limit protection, the driver can turn off the
power stage in the unlikely event that the digital
system can not respond to a failure situation in time.
For fast switching speeds, the UCD7100 output stage
uses the TrueDrive™ output architecture, which
delivers rated current of ±4 A into the gate of a
MOSFET during the Miller plateau region of the
switching transition. It also includes a 3.3-V, 10-mA
linear regulator to provide power to the digital
controller.
TYPICAL APPLICATION DIAGRAMS
VIN
VOUT
Bias
Winding
Digital Controller
AN1
AGND
UCD7100PWP
3
3V3
PWMA
2
IN
INT
5
CLF
VDD
PWMB
VDD 14
OUT 12
6 ILIM
CS 8
4 AGND
Communication
2
AN2
AN3
Isolation
Amplifier
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TrueDrive, PowerPAD are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2010, Texas Instruments Incorporated
UCD7100
SLUS651C – MARCH 2005 – REVISED MAY 2010
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DESCRIPTION (CONT.)
The UCD7000 driver family is compatible with standard 3.3-V I/O ports of DSPs, Microcontrollers, or ASICs.
UCD7100 is offered in a PowerPAD™ HTSSOP-14.
CONNECTION DIAGRAMS
PWP−14 PACKAGE
(TOP VIEW)
VDD
IN
3V3
AGND
CLF
ILIM
NC
14
13
12
11
10
9
8
1
2
3
4
5
6
7
PVDD
PVDD
OUT
OUT
PGND
PGND
CS
NC − No internal connection
ORDERING INFORMATION
(1)
(2)
Temperature Range
110-V HV Startup Circuit
-40°C to 105°C
No
Packaged Devices (1)
PowerPAD™ HTSSOP-14 (PWP)
UCD7100PWP
HTSSOP-14 (PWP) package is available taped and reeled. Add R suffix to device type (e.g. UCD7100PWPR) to order quantities of
2,000 devices per reel for the PWP package.
These products are packaged in Pb-Free and Green lead finish of Pd-Ni-Au which is compatible with MSL level 1 at 255°C to 260°C
peak reflow temperature to be compatible with either lead free or Sn/Pb soldering operations.
ABSOLUTE MAXIMUM RATINGS (1)
SYMBOL
VDD
(2)
PARAMETER
Supply Voltage
20
Switching, TA = 25°C, TJ = 125°C, VDD = 12 V
200
VOUT
Output Gate Drive
Voltage
OUT
Output Gate Drive
Current
OUT
IOUT(source)
-1 V to VDD
4.0
-4.0
ISET, CS
-0.3 to 3.6
ILIM
-0.3 to 3.6
Digital I/O’s
IN, CLF
-0.3 to 3.6
Power Dissipation
TA = 25°C, TJ = 125°C, (PWP-14)
Analog Input
2.67
TJ
Junction Operating Temperature
-55 to 150
Tstr
Storage Temperature
-65 to 150
HBM
CDM
TSOL
(2)
2
ESD Rating
UNIT
16
Supply Current
IOUT(sink)
UCD7100
Quiescent
IDD
(1)
(2)
Human body model
2000
Change device model
500
Lead Temperature (Soldering, 10 sec)
+300
mA
V
A
V
W
°C
V
°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.
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RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage, VDD
Supply bypass capacitance
MIN
TYP
MAX
UNIT
4.25
12
14.5
V
1
Reference bypass capacitance
0.22
Operating junction temperature
-40
µF
105
°C
TYP
MAX
UNIT
ELECTRICAL CHARACTERISTICS
VDD = 12 V, 4.7-µF capacitor from VDD to GND, TA = TJ = -40°C to 105°C, (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
SUPPLY SECTION
Supply current, OFF
VDD = 4.2 V
200
400
µA
Supply current
Outputs not switching IN = LOW
1.5
2.5
mA
LOW VOLTAGE UNDER-VOLTAGE LOCKOUT
VDD UVLO ON
4.25
4.5
4.75
VDD UVLO OFF
4.05
4.25
4.45
VDD UVLO hysteresis
150
250
350
3.267
3.3
3.333
3.234
3.3
3.366
V
mV
REFERENCE / EXTERNAL BIAS SUPPLY
3V3 initial set point
TA = 25°C
3V3 over temperature
3V3 load regulation
ILOAD = 1 mA to 10 mA, VDD = 5 V
1
6.6
3V3 line regulation
VDD = 4.75 V to 12 V, ILOAD = 10 mA
1
6.6
Short circuit current
VDD = 4.75 to 12 V
11
20
35
3V3 OK threshold, ON
3.3 V rising
2.9
3.0
3.1
3V3 OK threshold, OFF
3.3 V falling
2.7
2.8
2.9
V
mV
mA
V
INPUT SIGNAL
HIGH, positive-going input threshold
voltage (VIT+)
1.65
2.08
LOW negative-going input threshold
voltage (VIT-)
1.16
1.5
0.6
0.8
Input voltage hysteresis, (VIT+ VIT-)
Frequency
2
V
MHz
CURRENT LIMIT (ILIM)
ILIM internal current limit threshold
0.466
0.50
0.536
ILIM maximum current limit threshold ILIM = 3.3 V
ILIM = OPEN
0.975
1.025
1.075
ILIM current limit threshold
ILIM = 0.75 V
0.700
0.725
0.750
ILIM minimum current limit threshold
ILIM = 0.25 V
0.21
0.23
0.25
CLF output high level
CS > ILIM , ILOAD = -7 mA
2.64
CLF output low level
CS ≤ ILIM, ILOAD = 7 mA
Propagation delay from IN to CLF
IN rising to CLF falling after a current limit event
0.66
10
20
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V
V
mV
V
ns
3
UCD7100
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ELECTRICAL CHARACTERISTICS (continued)
VDD = 12 V, 4.7-µF capacitor from VDD to GND, TA = TJ = -40°C to 105°C, (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
5
25
50
UNIT
CURRENT SENSE COMPARATOR
Bias voltage
Includes CS comp offset
Input bias current
–1
mV
uA
Propagation delay from CS to OUTx
ILIM = 0.5 V, measured on OUTx, CS = threshold + 60 mV
25
40
Propagation delay from CS to CLF
ILIM = 0.5 V, measured on CLF, CS = threshold + 60 mV
25
50
35
75
ns
CURRENT SENSE DISCHARGE TRANSISTOR
Discharge resistance
IN = low, resistance from CS to AGND
10
Ω
OUTPUT DRIVERS
Source current
(1)
(1)
Sink current
Source current (1)
(1)
Sink current
Rise time, tR
(1)
VDD = 12 V, IN = high, OUT = 5 V
4
VDD = 12 V, IN = low, OUT = 5 V
4
VDD = 4.75 V, IN = high, OUT = 0
2
VDD = 4.75 V, IN = low, OUT = 4.75 V
A
3
CLOAD = 2.2 nF, VDD = 12 V
10
20
CLOAD = 2.2 nF, VDD = 12 V
10
15
Output with VDD < UVLO
VDD = 1.0 V, ISINK = 10 mA
0.8
1.2
V
Propagation delay from IN to OUTx,
tD1
CLOAD = 2.2 nF, VDD = 12 V, CLK rising
20
35
ns
Fall time, tF
(1)
(1)
ns
Ensured by design. Not 100% tested in production.
VIT+
INPUT
VIT−
tF
tF
tD1
90%
tD2
OUTPUT
10%
NOTE
The 10% and 90% thresholds depict the dynamics of the bipolar output devices that
dominate the power MOSFET transition through the Miller regions of operation.
4
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FUNCTIONAL BLOCK DIAGRAM
14 PVDD
VDD 1
13 PVDD
3V3 Regulator
&
Reference
UVLO
11 OUT
IN 2
3V3 3
10 PGND
AGND 4
25 mV
Q SD
Q
+
9
PGND
8
CS
+
CLF 5
12 OUT
R
ILIM 6
N/C 7
Figure 1. UCD7100
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TERMINAL FUNCTIONS
UCD7100
PIN
NAME
I/O
1
VDD
I
Supply input pin to power the driver. The UCD7K devices accept an input range of 4.25 V to
15 V. Bypass the pin with at least 4.7 µF of capacitance.
2
2
IN
I
The IN pin is a high impedance digital input capable of accepting 3.3-V logic level signals up
to 2 MHz. There is an internal Schmitt trigger comparator which isolates the internal circuitry
from any external noise.
3
3
3V3
O
Regulated 3.3-V rail. The onboard linear voltage regulator is capable of sourcing up to 10 mA
of current. Place 0.22-µF of ceramic capacitance from the pin to ground.
4
4
AGND
-
Analog ground return.
5
5
CLF
O
Current limit flag. When the CS level is greater than the ILIM voltage minus 25 mV, the output
of the driver is forced low and the current limit flag (CLF) is set high. The CLF signal is
latched high until the UCD7K device receives the next rising edge on the IN pin.
6
6
ILIM
I
Current limit threshold set pin. The current limit threshold can be set to any value between
0.25 V and 1.0 V.
7
7
NC
-
No Connection.
8
8
CS
I
Current sense pin. Fast current limit comparator connected to the CS pin is used to protect
the power stage by implementing cycle-by-cycle current limiting.
9
9
PGND
-
Power ground return. Connect the two PGNDs together. These ground pins should be
connected very closely to the source of the power MOSFET.
10
10
PGND
-
Power ground return. Connect the two PGNDs together. These ground pins should be
connected very closely to the source of the power MOSFET.
11
11
OUT
O
The high-current TrueDrive™ driver output. Connect the two OUT pins together.
12
12
OUT
O
The high-current TrueDrive™ driver output. Connect the two OUT pins together.
13
13
PVDD
I
Supply pin provides power for the output drivers. It is not connected internally to the VDD
supply rail. Connect the two PVDD pins together.
14
14
PVDD
I
Supply pin provides power for the output drivers. It is not connected internally to the VDD
supply rail. Connect the two PVDD pins together.
HTSSOP
-14 PIN #
DFN-14
PIN #
1
6
FUNCTION
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APPLICATION INFORMATION
The UCD7100 is part of a family of digital compatible drivers targeting applications utilizing digital control
techniques or applications that require local fast peak current limit protection.
Supply
The UCD7K devices accept an input range of 4.5 V to 15 V. The device has an internal precision linear regulator
that produces the 3V3 output from this VDD input. A separate pin, PVDD, not connected internally to the VDD
supply rail provides power for the output drivers. In all applications the same bus voltage supplies the two pins. It
is recommended that a low value of resistance be placed between the two pins so that the local capacitance on
each pin forms low pass filters to attenuate any switching noise that may be on the bus.
Although quiescent VDD current is low, total supply current will be higher, depending on the gate drive output
current required by the switching frequency. Total VDD current is the sum of quiescent VDD current and the
average OUT current. Knowing the operating frequency and the MOSFET gate charge (QG), average OUT
current can be calculated from:
IOUT = QG x f, where f is frequency.
For high-speed circuit performance, a VDD bypass capacitor is recommended to prevent noise problems. A
4.7-µF ceramic capacitor should be located close to the VDD to ground connection. A larger capacitor with
relatively low ESR should be connected to the PVDD pin, to help deliver the high current peaks to the load. The
capacitors should present a low impedance characteristic for the expected current levels in the driver application.
The use of surface mount components for all bypass capacitors is highly recommended.
Reference / External Bias Supply
All devices in the UCD7K family are capable of supplying a regulated 3.3-V rail to power various types of external
loads such as a microcontroller or an ASIC. The onboard linear voltage regulator is capable of sourcing up to 10
mA of current. For normal operation, place a minimum of 0.22 µF of ceramic capacitance from the reference pin
to ground.
Input
The IN pin is a high impedance digital input capable of accepting 3.3-V logic level signals up to 2 MHz. There is
an internal Schmitt Trigger comparator which isolates the internal circuitry from any external noise.
If limiting the rise or fall times to the power device is desired, then an external resistance can be added between
the output of the driver and the load device, which is generally a power MOSFET gate. The external resistor may
also help remove power dissipation from the package.
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Current Sensing and Protection
A very fast current limit comparator connected to the CS pin is used to protect the power stage by implementing
cycle-by-cycle current limiting.
The current limit threshold is equal to the lesser of the positive inputs at the current limit comparator. The current
limit threshold can be set to any value between 0.25 V and 1.0 V by applying the desired threshold voltage to the
current limit (ILIM) pin. When the CS level is greater than the ILIM voltage minus 25 mV, the output of the driver
is forced low and the current limit flag (CLF) is set high. The CLF signal is latched high until the UCD7K device
receives the next rising edge on the IN pin.
When the CS voltage is below ILIM, the driver output will follow the PWM input. The CLF digital output flag can
be monitored by the host controller to determine when a current limit event occurs and to then apply the
appropriate algorithm to obtain the desired current limit profile.
One of the main benefits of this local protection feature is that the UCD7K devices can protect the power stage if
the software code in the digital controller becomes corrupted and hangs up. If the controller’s PWM output stays
high, the local current sense circuit will turn off the driver output when an over-current condition occurs. The
system would likely go into a retry mode because; most DSP and microcontrollers have on-board watchdog,
brown-out, and other supervisory peripherals to restart the device in the event that it is not operating properly.
But these peripherals typically do not react fast enough to save the power stage. The UCD7K’s local current limit
comparator provides the required fast protection for the power stage.
The CS threshold is 25 mV below the ILIM voltage. This way, if the user attempts to command zero current (ILIM
< 25 mV) while the CS pin is at ground, for example at start-up, the CLF flag latches high until the IN pin
receives a pulse. At start-up it is necessary to ensure that the ILIM pin always greater than the CS pin for the
handshaking to work as described below. If for any reason the CS pin comes to within 25 mV of the ILIM pin
during start-up, then the CLF flag is latched high and the digital controller must poll the UCD7K device, by
sending it a narrow IN pulse. If the fault condition is not present the IN pulse resets the CLF signal to low
indicating that the UCD7K device is ready to process power pulses.
8
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Handshaking
The UCD7K family of devices have a built-in handshaking feature to facilitate efficient start-up of the digitally
controlled power supply. At start-up the CLF flag is held high until all the internal and external supply voltages of
the UCD7K device are within their operating range. Once the supply voltages are within acceptable limits, the
CLF goes low and the device will process input drive signals. The micro-controller should monitor the CLF flag at
start-up and wait for the CLF flag to go LOW before sending power pulses to the UCD7K device.
Driver Output
The high-current output stage of the UCD7K device family is capable of supplying ±4-A peak current pulses and
swings to both VDD and GND. The driver outputs follows the state of the IN pin provided that the VDD and 3V3
voltages are above their respective under-voltage lockout threshold.
The drive output utilizes Texas Instruments’ TrueDrive™ architecture, which delivers rated current into the gate
of a MOSFET when it is most needed during the Miller plateau region of the switching transition providing
efficiency gains.
TrueDrive™ consists of pullup/ pulldown circuits using bipolar and MOSFET transistors in parallel. The peak
output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is
the RDS(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of
the bipolar transistor. This hybrid output stage also allows efficient current sourcing at low supply voltages.
Each output stage also provides a very low impedance to overshoot and undershoot due to the body diode of the
external MOSFET. This means that in many cases, external-schottky-clamp diodes are not required.
Source/Sink Capabilities During Miller Plateau
Large power MOSFETs present a large load to the control circuitry. Proper drive is required for efficient, reliable
operation. The UCD7K drivers have been optimized to provide maximum drive to a power MOSFET during the
Miller plateau region of the switching transition. This interval occurs while the drain voltage is swinging between
the voltage levels dictated by the power topology, requiring the charging/discharging of the drain-gate
capacitance with current supplied or removed by the driver device. See Reference [1]
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Drive Current and Power Requirements
The UCD7K family of drivers can deliver high current into a MOSFET gate for a period of
nanoseconds. High peak current is required to turn the device ON quickly. Then, to turn the
driver is required to sink a similar amount of current to ground. This repeats at the operating
power device. A MOSFET is used in this discussion because it is the most common type of
used in high frequency power conversion equipment.
several hundred
device OFF, the
frequency of the
switching device
Reference [1] discusses the current required to drive a power MOSFET and other capacitive-input switching
devices.
When a driver device is tested with a discrete, capacitive load it is a fairly simple matter to calculate the power
that is required from the bias supply. The energy that must be transferred from the bias supply to charge the
capacitor is given by:
E + 1 CV2
2
(1)
where C is the load capacitor and V is the bias voltage feeding the driver.
There is an equal amount of energy transferred to ground when the capacitor is discharged. This leads to a
power loss given by the following:
P + 1 CV2 f
2
(2)
where f is the switching frequency.
This power is dissipated in the resistive elements of the circuit. Thus, with no external resistor between the driver
and gate, this power is dissipated inside the driver. Half of the total power is dissipated when the capacitor is
charged, and the other half is dissipated when the capacitor is discharged. An actual example using the
conditions of the previous gate drive waveform should help clarify this.
With VDD = 12 V, CLOAD = 10 nF, and f = 300 kHz, the power loss can be calculated as:
P + 10 nF
122
300 kHz + 0.432 W
(3)
With a 12-V supply, this would equate to a current of:
I + P + 0.432 W + 0.036 A
V
12 V
(4)
The actual current measured from the supply was 0.037 A, and is very close to the predicted value. But, the IDD
current that is due to the device internal consumption should be considered. With no load the device current
drawn is 0.0027 A. Under this condition the output rise and fall times are faster than with a load. This could lead
to an almost insignificant, yet measurable current due to cross-conduction in the output stages of the driver.
However, these small current differences are buried in the high frequency switching spikes, and are beyond the
measurement capabilities of a basic lab setup. The measured current with 10-nF load is close to the value
expected.
The switching load presented by a power MOSFET can be converted to an equivalent capacitance by examining
the gate charge required to switch the device. This gate charge includes the effects of the input capacitance plus
the added charge needed to swing the drain of the device between the ON and OFF states. Most manufacturers
provide specifications that provide the typical and maximum gate charge, in nC, to switch the device under
specified conditions. Using the gate charge QG, one can determine the power that must be dissipated when
charging a capacitor. This is done by using the equivalence QG = CEFF x V to provide the following equation for
power:
P+C
V2
f + QG
V
f
(5)
This equation allows a power designer to calculate the bias power required to drive a specific MOSFET gate at a
specific bias voltage.
10
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Thermal Information
The useful range of a driver is greatly affected by the drive power requirements of the load and the thermal
characteristics of the device package. In order for a power driver to be useful over a particular temperature range
the package must allow for the efficient removal of the heat produced while keeping the junction temperature
within rated limits. The UCD7K family of drivers is available in PowerPAD™ TSSOP package to cover a range of
application requirements. Both have the exposed pads to relieve thermal dissipation from the semiconductor
junction.
As illustrated in Reference [2], the PowerPAD™ packages offer a leadframe die pad that is exposed at the base
of the package. This pad is soldered to the copper on the PC board (PCB) directly underneath the device
package, reducing the ΘJC down to 4.7°C/W. The PC board must be designed with thermal lands and thermal
vias to complete the heat removal subsystem, as summarized in Reference [3].
Note that the PowerPAD™ is not directly connected to any leads of the package. However, it is electrically and
thermally connected to the substrate which is the ground of the device.
Circuit Layout Recommendations
In a power driver operating at high frequency, it is a significant challenge to get clean waveforms without much
overshoot/undershoot and ringing. The low output impedance of these drivers produces waveforms with high
di/dt. This tends to induce ringing in the parasitic inductances. Utmost care must be used in the circuit layout. It is
advantageous to connect the driver IC as close as possible to the leads. The driver device layout has the analog
ground on the opposite side of the output, so the ground should be connected to the bypass capacitors and the
load with copper trace as wide as possible. These connections should also be made with a small enclosed loop
area to minimize the inductance.
VIN
VOUT
Bias Supply
Bias
Winding
UCD7100PWP
1 VDD
3 3V3
1
VDS
2
UCD91xx
with
CLA
Peripheral
PVDD 14
VDS
PVDD 13
IN
2
4 AGND
5 CLF
CS
OUT 12
OUT 11
6 ILIM
FB
7
NC
PGND 10
PGND 9
2
CS 8
CS
COMMUNICATION
(Programming & Status Reporting)
2
Isolation
Amplifier
Figure 2. Isolated Forward Converter
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~
VAC
−
+
~
Bias
Supply
VOUT
UCD7100PWP
1
VDD
3 3V3
Signal
Conditioning
Amplifier
UCD9501
Digital
Controller
PFC_ISENSE
VDS
PVDD 14
VDS
PVDD 13
2 IN
4 AGND
OUT 12
OUT 11
CS
5 CLF
FB
6 ILIM
PGND 10
PGND 9
7 NC
CS 8
CS
COMMUNICATION
(Programming & Status Reporting)
Signal
Conditioning
Amplifier
Figure 3. PFC Boost Front-End Power Supply
12
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TYPICAL CHARACTERISTICS
UVLO THRESHOLDS
vs
TEMPERATURE
3V3 REFERENCE VOLTAGE
vs
TEMPERATURE
5.0
3.36
UVLO on
4.5
3.34
UVLO on
3V3 − Reference Voltage − V
VUVLO − UVLO Thresholds − V
4.0
3.5
3.0
2.5
2.0
1.5
3.32
3.30
3.28
1.0
3.26
0.5
0.0
−50
UVLO on
3.24
−25
0
25
50
75
100
125
−50
−25
0
t − Temperature − °C
Figure 4.
Figure 5.
3V3 SHORT CIRCUIT CURRENT
vs
TEMPERATURE
INPUT THRESHOLDS
vs
TEMPERATURE
125
100
125
Input Rising
22.5
2.0
VINPUT − Input Voltage − V
ISHORT_CKT − Short Circuit Current − mA
100
2.5
23.0
22.0
VDD = 4.75 V
21.5
VDD = 12 V
21.0
1.5
Input Falling
1.0
0.5
20.5
20.0
−50
25
50
75
t − Temperature − °C
0.0
−25
0
25
50
75
t − Temperature − °C
100
125
−50
−25
0
25
50
75
TJ − Temperature − °C
Figure 6.
Figure 7.
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TYPICAL CHARACTERISTICS (continued)
OUTPUT RISE TIME AND FALL TIME
vs
TEMPERATURE (VDD = 12 V
)
RISE TIME
vs
SUPPLY VOLTAGE
65
18.0
tR = Rise Time
55
CLOAD = 10 nF
14.0
12.0
10.0
tR − Rise Time − ns
tR, tF − Rise and Fall Times − ns
16.0
tF = Fall Time
8.0
6.0
45
CLOAD = 4.7 nF
35
25
CLOAD = 2.2 nF
4.0
15
2.0
CLOAD = 1 nF
0.0
5
−50
−25
0
25
50
75
100
5
125
7.5
TJ − Temperature − °C
10
12.5
15
VDD − Supply Voltage − V
Figure 8.
Figure 9.
FALL TIME
vs
SUPPLY VOLTAGE
PROPAGATION DELAY RISING
vs
SUPPLY VOLTAGE
20
45
tF − Fall Time − ns
35
tPD − Propagation Delay, Rising − ns
40
CLOAD = 10 nF
30
25
CLOAD = 4.7 nF
20
CLOAD = 2.2 nF
15
CLOAD = 10 nF
15
10
CLOAD = 4.7 nF
5
CLOAD = 2.2 nF
CLOAD = 1 nF
10
CLOAD = 1 nF
0
5
5
7.5
10
12.5
15
5
10
12.5
15
VDD − Supply Voltage − V
VDD − Supply Voltage − V
Figure 10.
14
7.5
Figure 11.
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UCD7100
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SLUS651C – MARCH 2005 – REVISED MAY 2010
TYPICAL CHARACTERISTICS (continued)
PROPAGATION DELAY FALLING
vs
SUPPLY VOLTAGE
DEFAULT CURRENT LIMIT THRESHOLD
vs
TEMPERATURE
0.54
0.53
VCS − Current Limit Threshold − V
tPD − Propagation Delay, Falling − ns
25
CLOAD = 10 nF
20
15
CLOAD = 4.7 nF
10
CLOAD = 2.2 nF
0.52
0.51
0.50
0.49
0.48
0.47
CLOAD = 1 nF
5
0.46
5
7.5
10
12.5
15
−50
−25
25
50
75
Figure 12.
Figure 13.
CS TO OUTx PROPAGATION DELAY
vs
TEMPERATURE
CS TO CLF PROPAGATION DELAY
vs
TEMPERATURE
40
100
125
50
45
35
tPD − CS to CLF Propagation Delay − ns
tPD − CS to OUTx Propagation Delay − ns
0
TJ − Temperature − °C
VDD − Supply Voltage − V
30
25
20
15
10
5
40
35
30
25
20
15
10
5
0
0
−50
−25
0
25
50
75
100
125
−50
−25
0
25
50
75
100
125
TJ − Temperature − °C
TJ − Temperature − °C
Figure 14.
Figure 15.
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TYPICAL CHARACTERISTICS (continued)
IN TO OUT PROPAGATION DELAY
vs
TEMPERATURE
START-UP BEHAVIOR AT VDD = 12 V (INPUT TIED TO 3V3)
35
VDD (2 V/div)
tPD − Propagation Delay − ns
30
25
20
15
3V3 (2 V/div)
10
5
OUTx (2 V/div)
0
−50
−25
0
25
50
75
100
t − Time − 40 µs/div
125
TJ − Temperature − °C
Figure 16.
Figure 17.
SHUT DOWN BEHAVIOR AT VDD = 12 V (INPUT TIED TO
3V3)
START-UP BEHAVIOR AT VDD = 12 V (INPUT SHORTED
TO GND)
VDD (2 V/div)
VDD (2 V/div)
3V3 (2 V/div)
3V3 (2 V/div)
OUTx (2 V/div)
OUTx (2 V/div)
t − Time − 40 µs/div
t − Time − 40 µs/div
Figure 18.
16
Figure 19.
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UCD7100
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SLUS651C – MARCH 2005 – REVISED MAY 2010
TYPICAL CHARACTERISTICS (continued)
SHUT DOWN BEHAVIOR AT VDD = 12 V (INPUT SHORTED
TO GND)
OUTPUT RISE AND FALL TIME (VDD = 12 V, CLOAD = 10
NF)
Output Voltage − 2 V/div
VDD (2 V/div)
3V3 (2 V/div)
OUTx (2 V/div)
t − Time − 40 ns/div
t − Time − 40 µs/div
Figure 20.
Figure 21.
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UCD7100
SLUS651C – MARCH 2005 – REVISED MAY 2010
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REFERENCES
1. Power Supply Seminar SEM−1400 Topic 2: Design And Application Guide For High Speed MOSFET Gate
Drive Circuits, by Laszlo Balogh, Texas Instruments Literature No. SLUP133.
2. Technical Brief, PowerPad Thermally Enhanced Package, Texas Instruments Literature No. SLMA002
3. Application Brief, PowerPAD Made Easy, Texas Instruments Literature No. SLMA004
RELATED PRODUCTS
PRODUCT
UCD7200
(1)
(2)
DESCRIPTION
FEATURES
3V3, CS (1)
Dual Low Side ±4-A Drivers with Independent CS
(2)
(1) (2)
UCD7201
Dual Low Side ±4-A Drivers with Common CS
3V3, CS
UCD7230
±4A Synchronous Buck Driver with CS
3V3, CS (1)
UCD9110
Digital Power Controller for High Performance Single-loop Applications
(2)
3V3 = 3.3V linear regulator.
CS = current sense and current limit function.
REVISION HISTORY
DATE
18
REVISION
CHANGE DESCRIPTION
3/4/05
SLUS651
Initial release
4/29/09
SLUS651B
Removed QFN package option and all references.
5/21/10
SLUS651C
Removed part numbers, UCD7500, UCD7600, UCD7601 and UCD9501 from Related Products
Section.
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Product Folder Link(s): UCD7100
PACKAGE OPTION ADDENDUM
www.ti.com
15-May-2010
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
UCD7100PWP
ACTIVE
HTSSOP
PWP
14
90
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
UCD7100PWPG4
ACTIVE
HTSSOP
PWP
14
90
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
UCD7100PWPR
ACTIVE
HTSSOP
PWP
14
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
UCD7100PWPRG4
ACTIVE
HTSSOP
PWP
14
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
UCD7100PWPR
Package Package Pins
Type Drawing
SPQ
HTSSOP
2000
PWP
14
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
330.0
12.4
Pack Materials-Page 1
6.9
B0
(mm)
K0
(mm)
P1
(mm)
5.6
1.6
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Jul-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
UCD7100PWPR
HTSSOP
PWP
14
2000
346.0
346.0
29.0
Pack Materials-Page 2
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