TI SN65HVD101

SN65HVD101
SN65HVD102
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SLLSE84A – MAY 2011 – REVISED MARCH 2013
IO-LINK PHY for Device Nodes
Check for Samples: SN65HVD101, SN65HVD102
FEATURES
1
•
•
•
•
•
•
•
Configurable CQ Output: Push-Pull, High-Side,
or Low-Side for SIO Mode
Remote Wake-Up Indicator
Current Limit Indicator
Power-Good Indicator
Overtemperature Protection
Reverse Polarity Protection
Configurable Current Limits
•
•
•
•
9-V to 36-V Supply Range
Tolerant to 50-V Peak Line Voltage
3.3-V/5-V Configurable Integrated LDO
(SN65HVD101 ONLY)
20-pin QFN Package, 4 mm × 3.5 mm
APPLICATIONS
•
Suitable for IO-Link Device Nodes
DESCRIPTION
The SN65HVD101 and ‘HVD102 IO-LINK PHYs implement the IO-LINK interface for industrial point-to-point
communication. When the device is connected to an IO-Link master through a 3-wire interface, the master can
initiate communication and exchange data with the remote node while the SN65HVD10X acts as a complete
physical layer for the communication.
The IO-LINK driver output (CQ) can be used in push-pull, high-side, or low-side configurations using the EN and
TX input pins. The PHY receiver converts the 24-V IO-LINK signal on the CQ pin to standard logic levels on the
RX pin. A simple parallel interface is used to receive and transmit data and status information between the PHY
and the local controller.
The SN65HVD101 and 'HVD102 implement protection features for overcurrent, overvoltage and overtemperature
conditions. The IO-Link driver current limit can be set using an external resistor. If a short-circuit current fault
occurs, the driver outputs are internally limited, and the PHY generates an error signal (SC). These devices also
implement an overtemperature shutdown feature that protects the device from high-temperature faults.
The SN65HVD102 operates from a single external 3.3-V or 5-V local supply. The SN65HVD101 integrates a
linear regulator that generates either 3.3 V or 5 V from the IO-Link L+ voltage for supplying power to the PHY as
well as a local controller and additional circuits.
The SN65HVD101 and 'HVD102 are available in the 20-pin RGB package (4 mm × 3,5 mm QFN) for spaceconstrained applications.
VCC
OUT
VCC VCC
IN SET
L+
SUPPLY VOLTAGE
CONTROL
PWR_OK
RX
CQ
TX
Voltage
Timers
EN
WAKE
CUR_OK
Control
Logic
Voltage
Detectors
L-
Over Current Over Current
Timers
Detectors
TEMPERATURE
SENSE
TEMP_OK
ILIM_ADJ
GND
L-
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011–2013, Texas Instruments Incorporated
SN65HVD101
SN65HVD102
SLLSE84A – MAY 2011 – REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PIN DESCRIPTIONS
The definitions below define the functionality for each pin.
Type: I
Input
Type: O
CMOS Output
Type: I/O
Input/Output
Type: OD Open Drain Output
Type: A
Analog
Type: P
Power
PIN FUNCTIONS
SIGNAL
NAME
TYPE
PIN
DESCRIPTION
IO-LINK Interface
L+
P
10
IO-Link supply voltage (24V nominal)
CQ
I/O
12
IO-Link data signal (bi-directional)
L–
P
14
IO-Link ground (connect to GND on board)
Local Controller Interface
CUR_OK
OD
15
High-CQ-current fault indicator output signal from PHY to the microcontroller, a LOW level indicates overcurrent condition
WAKE
OD
16
Wake up indicator from the PHY to the local controller
RX
O
17
PHY data output to the local controller
TX
I
18
PHY data input from the local controller
EN
I
20
Driver enable control from the local controller
Power Supply Pins
VCC IN
A
7
Voltage supply input (HVD102)
Voltage sense feedback input for voltage regulator (HVD101) - connect to pin 8 either directly or through a
current boost transistor.
VCC OUT
P
8
Output voltage from the voltage regulator (HVD101) - connect to pin 7 either directly or through a current
boost transistor.
No connect (HVD102)
GND
P
3, 6, 13 Ground pins
Special connect pins
VCC SET
I
1
If this pin is left floating then the Vcc supply is 5V.
If this pin is connected to GND, then the Vcc supply is 3.3V
ILIMADJ
A
4
Sets the CQ Output Current. A resistor RSET is connected to this pin. The output current is defined as VREF
/ (RINT + RSET ) × KSET.
PWR_OK
OD
5
Power Good signal. A high impedance on this pin indicates that the L+ and Vcc outputs are at correct
levels.
Temp_OK
OD
19
Temperature Good signal. A high impedance on this pin indicates that the internal temperature is at a safe
level. If the internal device temperature reaches a level approaching the thermal shutdown temperature,
this pin will go to an active low state.
NC
2
2, 9, 11 No Connect. Leave these pins floating (open)
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L-
GND
CQ
NC
CUR_OK
L-
GND
CQ
NC
HVD102
(Top View)
CUR_OK
HVD101
(Top View)
15
14
13
12
11
15
14
13
12
11
WAKE 16
10 L+
WAKE 16
10 L+
RX 17
9 NC
RX 17
9 NC
TX 18
8 Vcc OUT
TX 18
8 NC
TEMP_OK 19
7 Vcc IN
EN 20
2
3
4
5
PWR_OK
6 GND
1
ILIM_ADJ
GND
5
GND
NC
4
PWR_OK
3
ILIM_ADJ
2
Vcc SET
6 GND
1
NC
EN 20
7 Vcc IN
Vcc SET
TEMP_OK 19
In normal operation, the PHY sets the output state of the CQ pin when the driver is enabled. During fault
conditions, the driver may be disabled by internal circuits.
Table 1. Driver Function
EN
TX
CQ
COMMENT
L or OPEN
X
Z
PHY is in ready-to-receive state
H
L
H
PHY CQ is sourcing current (high-side drive)
H
H or OPEN
L
PHY CQ is sinking current (low-side drive)
Table 2. Receiver Function
CQ Voltage
RX
VCQ < VTHL
H
Comment
Normal receive mode, input low
VTHL < VCQ < VTHH
?
Indeterminate output, may be either H or L
VTHH < VCQ
L
Normal receive mode, input high
OPEN
H
Failsafe output high
Table 3. Wake Up Function
EN
TX
CQ VOLTAGE
WAKE
L
X
X
Z
PHY is in ready-to-receive state
COMMENT
H
L
VTHH < VCQ (tWU)
L
PHY receives High-level wake-up request from Master
H
X
VTHL < VCQ < VTHH
?
Indeterminate output, may be either H or L
H
H
VCQ < VTHL (tWU)
L
PHY receives Low-level wake-up request from Master
Table 4. Current Limit Indicator Function
CQ CURRENT
CUR_OK
|ICQ| < IO(LIM)
Z
COMMENT
Normal operation
|ICQ| > IO(LIM)
L
CQ current is at the internal limit
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Table 5. Temperature Indicator Function
Internal Temperature
Overtemp (Internal)
TEMP_OK
not overtemp
Z
Normal operation
T < TWARN
TWARN < T↑ < TSD
TSD < T
Comment
not overtemp
L
Temperature warning
overtemp disable
L
Overtemp disable
not overtemp
L
Temperature recovery
TWARN < T↓ < TRE
Table 6. Power Supply Indicator Function
VL+
VCC
PWR_OK
Comment
VL+ < VPG1
VPOR2 < VCC < VPG2
L
Both supplies too low
VPG1 < VL+
VPOR2 < VCC < VPG2
L
VCC too low
VL+ < VPG1
VPG2 < VCC
L
VL+ too low
VPG1 < VL+
VPG2 < VCC
Z
Both supplies correct
THERMAL INFORMATION
SN65HVD10x
THERMAL METRIC (1)
RGB PACKAGE
UNITS
20 PINS
θJA
Junction-to-ambient thermal resistance
33.8
θJCtop
Junction-to-case (top) thermal resistance
36.6
θJB
Junction-to-board thermal resistance
10.3
ψJT
Junction-to-top characterization parameter
0.4
ψJB
Junction-to-board characterization parameter
10.3
θJCbot
Junction-to-case (bottom) thermal resistance
TSTG
Storage temperature
(1)
°C/W
2.3
65 to 150
°C
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
VALUE
MIN
L+, CQ
Line voltage – steady state
–40
Line Voltage – transient, pulse width <100us
UNIT
MAX
+40 (2)
(3)
V
+50
V
VCC
Supply voltage
–0.3
6
V
TX, EN, VCC_SET, ILIMADJ,
Input voltage
–0.3
6
V
RX, CUR_OK, WAKE,
PWR_OK
Output voltage
–0.3
6
V
RX, CUR_OK, WAKE,
PWR_OK
Output current
TBD
Tstg
Storage temperature
–65
TJ
Die temperature
ESD
HBM (all pins)
V
IO
(1)
(2)
(3)
4
mA
150
°C
180
°C
2
kV
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with reference to the GND pin, unless otherwise specified.
GND pin and L- line should be at the same DC potential
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RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
VL+
Line voltage (1)
9
24
30
V
VCC
Logic supply voltage (3.3V nominal)
3
3.3
3.6
V
VCC
Logic supply voltage (5V nominal)
4.5
5
5.5
V
VIL
Logic low input voltage
0.8
V
VIH
Logic high input voltage
IO
Logic output current
2
V
–4
4
mA
20
mA
100
450
mA
0
20
kΩ
ICC(OUT) Logic supply current (HVD101)
IO(LIM)
CQ driver output current limit
RSET
External resistor for CQ current limit
CCOMP
Compensation capacitor for voltage regulator (HVD101)
Signaling rate
TA
Ambient temperature
TJ
Junction temperature
PD
Power dissipation
(1)
3.3
µF
IO-Link mode
1/tBIT
UNIT
250
SIO mode
10
kbps
–40
105
°C
–40
150
°C
see Thermal Characteristics table
These devices will operate with line voltage as low as 9V and as high as 36V, however, the parametric performance is optimized for the
IO-Link specified supply voltage range of 18V to 30V.
DEVICE CHARACTERISTICS
over all operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
–100
100
µA
1.5
3
V
VL+ < 18
3.5
V
18 < VL+
2
V
VL+ < 18
2.5
V
3
V
VL+ < 18
3.5
V
18 < VL+
2
V
VL+ < 18
2.5
V
2
µs
Driver Characteristics
IIN
Input current (TX, EN)
VIN = 0V to VCC
ICQ = –250 mA
VRQH
Residual voltage across the driver high side switch
ICQ = –200 mA
ICQ = 250 mA
VRQL
Residual voltage across the driver low side switch
ICQ = 200 mA
tPLH, tPHL
Driver propagation delay
tP(skew)
Driver propagation delay skew
tPZH, tPZL
Driver disable delay
tr , tf
Driver output rise, fall time
|tr – tf |
Difference in rise and fall time
|IO(LIM)|
Driver output current limit
KSET
Scale factor for current limit
I(OZ)
CQ leakage current with EN = L
18 < VL+
1.5
1
TX to CQ
18V < VL+ < 30 V
Driver enable delay (EN to CQ)
tPHZ, tPLZ
18 < VL+
9V < VL+ < 18 V
18V < VL+ < 30 V
VL+ < 18 V
0.2
Figure 1, Figure 2,
Figure 3,
RL = 2 kΩ,
CL = 5 nF
RSET = 0 Ω
18V < VL+
µs
5
µs
8
µs
5
µs
8
µs
896
ns
300
ns
RSET = 20 kΩ
60
95
130
mA
RSET = 0 kΩ
300
400
480
mA
2
µA
10.5
13
V
8
11.5
V
See the Typical Characterisitics
VCQ = 8 V
–2
RECEIVERS CHARACTERISTICS
VTHH
Input threshold “H”
VTHL
Input threshold “L”
VHYS
Receiver Hysteresis (VTHH – VTHL)
18 V < VL+ < 30 V
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0.5
1
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5
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DEVICE CHARACTERISTICS (continued)
over all operating conditions (unless otherwise noted)
PARAMETER
VTHH
Input threshold “H”
VTHL
Input threshold “L”
VHYS
Receiver Hysteresis (VTHH–VTHL)
TEST CONDITIONS
9 V < VL+ < 18 V
TYP
MAX
UNIT
(1)
Note (2)
V
Note
(3)
Note (4)
V
0.25
V
RX
IOL = 4 mA
0.4
OD outputs
IOL = 1 mA
0.4
VOL
Output low voltage
VOH
Output high voltage
RX
IOH = –4 mA
IOZ
Output leakage current
OD outputs
Output in Z state, VO = VCC
tWU1
Wake-up recognition begin
tWU2
Wake-up recognition end
tWAKE
Wake-up output delay
tND
Noise suppression time
tpR
MIN
Note
V
VCC–0.5
V
.03
See Figure 6
1
45
60
75
85
100
135
µA
µs
155
(5)
Receiver propagation delay
See Figure 4
18 V < VL+
300
VL+ < 18 V
250
ns
600
ns
800
ns
PROTECTION THRESHOLDS
TSD
Shutdown temperature
TRE
Re-enable temperature
TWARN
Thermal warning temperature (TEMP_OK)
tpSC
Current limit indicator delay
85
175
µs
VPG1
VL+ threshold for PWR_OK
8
10
V
(6)
Die Temperature
VCC Set = GND
160
175
190
110
125
140
120
135
150
2.45
2.75
3
3.9
4.25
4.6
°C
VPG2
VCC threshold for PWR_OK
VPOR1
Power-on Reset for VL+
6
V
VPOR2
Power-on Reset for VCC
2.5
V
VCC Set = OPEN
V
VOLTAGE REGULATOR CHARACTERISTICS (HVD101)
VCC_SET is OPEN
Voltage regulator output
18 V < VL+ < 30 V
Voltage regulator output
9 V < VL+ < 18 V
Voltage regulator drop-out voltage (VL+ – VCC)
ICC = 20 mA load current
Line regulation
9 V < VL+ < 30 V, IVCC = 1 mA
Load regulation
VL+ = 24 V,
IVCC = 100 µA to 20 mA
PSRR
100 kHz, IVCC = 20 mA
VCC
VCC_SET to GND
VCC_SET is OPEN
VCC_SET to GND
4.5
5
5.5
3
3.3
3.6
4.5
5
5.5
3
3.3
3.6
3.2
3.9
4
1.3%
30
V
V
V
mV/V
5%
40
dB
SUPPLY CURRENT
Quiescent supply current, Driver disabled
IL+
Dynamic supply current, Driver disabled
Dynamic supply current, Driver enabled
(1)
(2)
(3)
(4)
(5)
(6)
6
No Load
L+ = 24V,
No Load
1/tBIT = 250 kbps
HVD102
1
2
HVD101
1.3
3
HVD101
2
HVD102
1.5
See Typical Characteristics
mA
mA
mA
VTHH(min) = 5V + (11/18)[VL+ - 9V]
VTHH(max) = 6.5V + (13/18)[VL+ - 9V]
VTHL(min) = 4V + (8/18)[VL+ -9V]
VTHL(max) = 6V + (11/18)[VL+ -9V]
Noise suppression time is defined in the IO-Link standard as the permissible duration of a receive signal above/below the detection
threshold without detection taking place.
TRE is always less than TWARN so TEMP_OK is de-asserted (high impedance) when the device is re-enabled
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14
13
VTHH
Receiver Thresholds - V
12
11
10
9
VTHL
8
7
6
5
4
8
12
16
20
VL+ (V)
24
28
32
Figure 1. Receiver Threshold Boundaries
PARAMETER MEASUREMENT
L+
RL
TX
CQ
RL
CL
EN
Figure 2. Test Circuit for Driver Switching
VOH
TX
80%
50%
tPLH
tPHL
CQ
VL+
VCQ
80%
20%
VCQ
50%
20%
VOL
0V
tr
tf
Figure 3. Waveforms for Driver Output Switching Measurements
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PARAMETER MEASUREMENT (continued)
EN
50%
50%
EN
tPZH
tPLZ
tPZL
tPHZ
80%
50%
CQ
50%
CQ
20%
Figure 4. Waveform for Driver Enable/Disable Time Measurements
50%
CQ
tPHL
tPLH
RX
50%
Figure 5. Receiver switching measurements
8
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APPLICATION INFORMATION
SN65HVD101
VCC
VCC IN
VCC SET
L+
MICRO
CONTROLLER
TX
EN
RX
PWR_OK
SENSOR
CUR_OK
WAKE
IOLINK
MASTER
CQ
LGND
LIM ADJ
Figure 6. Application Example With VCC = 3.3 V
N-Switch SIO Mode
Set TX pin High and use EN pin as the control to realize the function of N-switch (low-side driver) on the CQ pin.
EN
L
H
TX
H
H
CQ
Hi-Z
N-Switch
P-Switch SIO Mode
Set TX pin Low and use EN pin as the control to realize the function of P-switch (high-side driver) on the CQ pin.
EN
L
H
TX
L
L
CQ
Hi-Z
P-Switch
Push-Pull / Communication Mode
Set TX pin Low and use EN pin as the control to realize the function of P-switch (high-side driver) on the CQ pin.
EN
L
H
H
TX
X
H
L
CQ
Hi-Z
N-Switch
P-Switch
Wake up detection
The device may be in IO-Link mode or SIO mode. If the device is in SIO mode and the master node wants to
initiate communication with the device node, the master drives the CQ line to the opposite of its present state,
and will either sink or source the wake up current (IQWU is typically up to 500 mA) for the wake-up duration (TWU
is typically 80 µs) depending on the CQ logic level as per the IO-LINK specification. The SN65HVD1XX IO-LINK
PHY detects this wake-up condition and communicates to the local microcontroller via the WAKE pin. The IOLink Communication Specification requires the device node to switch to receive mode within 500 microseconds
after receiving the Wake Up signal.
For over-current conditions shorter or longer than a valid Wake-Up pulse, the WAKE pin will remain in a highimpedance (inactive) state. This is illustrated in Figure 7, and discussed in the following paragraph.
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EN = H, TX = L
CQ
Over-current
caused by
transient
EN = H, TX = H
< 45 ms
CQ
RX
RX
WAKE
WAKE
CUR_OK
CUR_OK
CQ
80 ms ± 5 ms
RX
Wake-Up Pulse
from Master Node
CQ
WAKE
tPWAKE
tPWAKE
CUR_OK
Over-current
caused by fault
condition
80 ms ± 5 ms
RX
WAKE
CQ
< 45 ms
CUR_OK
> 250 ms
CQ
RX
RX
WAKE
WAKE
CUR_OK
> 250 ms
CUR_OK
tPSC
tPSC
Figure 7. Over-Current and Wake Conditions
Current Limit Indication, Short Circuit Current Detection
If the output current at CQ remains at the internally set current limit IO(LIM) for a duration longer than a wake-up
pulse (longer than 80 usec) the CUR_OK pin will be driven to a logic LOW state. The CUR_OK pin will return to
the high-impedance (inactive) state when the CQ pin is no longer in a current limit condition.
The state diagram shown in Figure 8 illustrates the various states and under what conditions the device
transitions from one state to another.
10
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EN
Receive
Only
CUR_OK = Z
WAKE = Z
Driver is OFF
Receive and
Transmit
CUR_OK = Z
WAKE = Z
Driver is ON
EN*
CQ NOT at ILIM
CQ at ILIM for t WU1< t < t WU2
and RX•7;
CQ at ILIM for
longer than tWU2
T > TSD
CQ at ILIM for
longer than tWU2
EN*
Wake
WAKE = L
CUR_OK = Z
Driver is ON
T < TRE
T > TSD
T > TSD
Thermal
Shutdown
CUR_OK =Z
WAKE = Z
Driver is OFF
T > TSD
Current
Fault
WAKE = Z
CUR_OK = L
Driver is ON
EN*
Figure 8. State Diagram
Over Temperature detection
If the internal temperature of the device exceeds the over-temperature threshold (θTSD), then the CQ driver and
voltage regulator (HVD101) will be internally disabled. When the temperature falls below the temperature
threshold the internal circuit re-enables the voltage regulator (HVD101) and the output driver, subject to the state
of the EN and TX pins.
CQ Current Limit Adjustment
The CQ driver output current limit can be set using an external resistor on the LIMADJ pin. The current limit is
given by:
I(LIM) = I_Ref × KSET space where I_Ref = VREF / (RINT + RSET)
Note that both the positive and negative current limits are set by a single resistor value. If no RSET is used
(LIMADJ is tied directly to GND) then the current limit is set to the maximum value of 400 mA.
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450
400
350
Current Limit
300
250
200
150
100
50
0
0
5000
10000
15000
20000
25000
Radjust
Figure 9. Typical Current Limit Characteristics
Over-Voltage and Reverse Polarity protection
Reverse polarity protection is included in the device. Any combination of voltages between 0 and 40V may be
applied at the pins L+, CQ and L- without causing device damage. For protection against higher levels of faults,
including transient over-voltage conditions, external protection devices can be added as shown in Figure 10. This
will protect the device against high-power transients, and will also stand-off a steady-state reverse polarity fault of
up to 33V.
Figure 10.
12
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Product Folder Links: SN65HVD101 SN65HVD102
SN65HVD101
SN65HVD102
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SLLSE84A – MAY 2011 – REVISED MARCH 2013
Table 7. Suggested External Protection Components
Device
Function
Part-No.
Manufacturer
XCVR
I/O Link transceiver
SN65HVD101
Texas Instruments
R
1Ω, 0.25W MELF resistor
MMA02040B1008FB300
Vishay
TVS
Bidirectional 1500W TVS
SMCJ33CA
Bourns
CS
2.2uF, 100V, X7R, 10%
HMK325B7225KN-T
Taiyo Yuden
CB
0.1uF, 100V, X7R, 10%
C2012X7R2A104K
TDK
CHV
4700 pF, 2kV, X7R, 10%
1812B472K202NT
Nocacap
Voltage Regulator (Not available in the SN65HVD102)
The SN65HVD101 integrates a linear voltage regulator which supplies power to external components as well as
to the PHY itself. The voltage regulator is specified for L+ voltages in the range of 9V to 30V with respect to
GND. The output voltage can be set using the VccSET pin. When this pin is left open (floating) then the output
voltage is 5V. When it is connected to GND then the output voltage is 3.3V. The integrated voltage regulator can
supply a maximum current of 20 mA to external components. When more supply current is needed, an external
transistor can be connected as shown in Figure 11 and Figure 12.
L+
+24VDC
HVD101
Q1
VCC_OUT
L-
1PF
ILOAD
VLOAD
VCC_IN
VCC_SET
GND
RLOAD
+24V RTN
VCC_IN = GND (+3.3VDC OPERATION)
Figure 11. Example Circuit for Boosted 3.3V-Supply Current
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Product Folder Links: SN65HVD101 SN65HVD102
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SN65HVD101
SN65HVD102
SLLSE84A – MAY 2011 – REVISED MARCH 2013
www.ti.com
L+
+24VDC
HVD101
Q1
VCC_OUT
L-
1PF
ILOAD
VLOAD
VCC_IN
VCC_SET
RLOAD
+24V RTN
GND
VCC_IN = VCC_SET (+5VDC OPERATION)
Figure 12. Example Circuit for Boosted 5V-Supply Current
Incandescent Lamp Loads
The resistance of an incandescent lamp filament varies strongly with temperature. The initial (cold-filament)
resistance of tungsten-filament lamps is less than 10% of the steady-state (hot-filament) resistance. For example,
a 100-watt, 120-volt lamp has a resistance of 144 Ω when lit, but the cold resistance is much lower (about 9.5 Ω).
The initial “in-rush” current is therefore high compared to the steady-state current. Within 3 to 5 ms the current
falls to approximately twice the hot current. For typical general-service lamps, the current reaches steady-state
conditions in less than about 100 milliseconds. The ‘HVD10x CQ output will remain at the selected current-limit
as the filament warms up, and then will stay at the steady-state current level. For example, a 6W, 24VDC
indicator lamp has a steady-state current of 250 mA. However, the initial in-rush current could be over 2 Amps if
unlimited. If the HVD10x current limit is set to 350 mA, this current will warm up the filament during the initial
lamp turn-on, and the final current will be below the current limit. If the CQ output current is at the limit for longer
than tSC, the SC output will be active. The local controller can disable the CQ driver if the high current is not
expected, or can re-check the SC output after 100 ms if the load is known to be incandescent.
SN65HVD101 Replaces ELMOS E981.10
The SN65HVD101 can replace the ELMOS E981.10 Basic IO-Link transceiver with a minimum of board reconfiguration. See the SN65HVD101 Evaluation Module for board design guidelines to accommodate both
devices.
14
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Product Folder Links: SN65HVD101 SN65HVD102
SN65HVD101
SN65HVD102
20
Vcc SET
W AKE
RX
TX
EN
SLLSE84A – MAY 2011 – REVISED MARCH 2013
(SPEED)
TEMP_ Ok
www.ti.com
16
1
15 CUR _OK
(SILIM )
L-
SN 65 HVD 101
GND
GND
Exposed Pad
GND
ILIMADJ
5
11
6
NC
NC
Vcc O UT
Vcc SENS
10
L+
PWR _OK
CQ
Figure 13. Comparison of HVD10x Pin-out to E981.10 Pin-out
REVISION HISTORY
Changes from Original (May 2011) to Revision A
•
Page
Changed the devices From: Product Preview To: Production .............................................................................................. 1
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Product Folder Links: SN65HVD101 SN65HVD102
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
SN65HVD101RGBR
ACTIVE
VQFN
RGB
20
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 105
HVD101
SN65HVD101RGBT
ACTIVE
VQFN
RGB
20
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 105
HVD101
SN65HVD102RGBR
ACTIVE
VQFN
RGB
20
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 105
HVD102
SN65HVD102RGBT
ACTIVE
VQFN
RGB
20
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 105
HVD102
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SN65HVD101RGBR
VQFN
RGB
20
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
1000
330.0
12.4
3.8
4.3
1.5
8.0
12.0
Q1
SN65HVD101RGBT
VQFN
RGB
20
250
180.0
12.4
3.8
4.3
1.5
8.0
12.0
Q1
SN65HVD102RGBR
VQFN
RGB
20
1000
330.0
12.4
3.8
4.3
1.5
8.0
12.0
Q1
SN65HVD102RGBT
VQFN
RGB
20
250
180.0
12.4
3.8
4.3
1.5
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
SN65HVD101RGBR
VQFN
RGB
20
1000
367.0
367.0
35.0
SN65HVD101RGBT
VQFN
RGB
20
250
210.0
185.0
35.0
SN65HVD102RGBR
VQFN
RGB
20
1000
367.0
367.0
35.0
SN65HVD102RGBT
VQFN
RGB
20
250
210.0
185.0
35.0
Pack Materials-Page 2
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