ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 1 GBPS TO 4.25 GBPS MULTI-RATE VCSEL DRIVER FEATURES • • • • • • • • • Multi-Rate Operation from 1 Gbps Up To 4.25 Gbps 2-Wire Digital Interface Digitally Selectable Modulation Current Digitally Selectable Bias Current Automatic Power Control (APC) Loop Supports Transceiver Management System (TMS) Includes Laser Safety Features Analog Temperature Sensor Output Single 3.3-V Supply • • Operating Temperature –40°C to 85°C Small Footprint Surface Mount 4 mm × 4 mm, 20-Pin QFN Package APPLICATIONS • • • Multirate SFP/SFF Modules 1.0625 Gbps, 2.125 Gbps, and 4.25 Gbps Fibre Channel Transmitters Gigabit Ethernet Transmitters DESCRIPTION The ONET4291VA is a versatile high-speed multi-rate VCSEL driver for fiber optic applications with data rates up to 4.25 Gbps. The device provides a 2-wire interface which allows digital control of the modulation and bias currents, eliminating the need for of external components. The ONET4291VA includes an integrated automatic power control loop as well as circuitry to support laser safety and transceiver management systems. The part is available in a small footprint 4 mm × 4 mm 20-pin QFN package and it requires a single 3.3-V supply. This power efficient multi-rate VCSEL driver is characterized for operation from –40°C to 85°C ambient temperature. BLOCK DIAGRAM A simplified block diagram of the ONET4291VA is shown in Figure 1. This compact, low power 1-Gbps to 4.25-Gbps multi-rate VCSEL driver consists of a high-speed current modulator, a modulation current generator, power-on reset circuitry, a 2-wire interface and control logic block, a bias current generator and automatic power control loop, and an analog reference block. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2005, Texas Instruments Incorporated ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 3 VCC 2 GND 60 Ω 60 Ω GND VCC Power-On Reset DOUT+ RESET DOUT− Limiting Gain Stage DIN+ 100 Ω DIN− High-Speed Current Modulator 8 IMOD MODC Modulation Current Generator MODR ENA 8 SCK SCK SDA SDA DIS DIS RESET MODC MODR ENA 2-Wire Interface and Control Logic Clock ENA OLE BIASC FLT PDP FAULT PDP FAULT FLT 8 RZTC TS RZTC TS Analog Reference ENA OLE BIASC Bias Current Generator and Automatic Power Control Loop (APC) BIAS BIAS MONB MONB MONP MONP MD COMP MD COMP B0072-01 Figure 1. Simplified Block Diagram of the ONET4291VA 2 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 HIGH-SPEED CURRENT MODULATOR The data signal is applied to the high-speed current modulator by means of the input signal pins DIN+/DIN–, which provide on-chip differential 100-Ω line-termination. The succeeding limiting gain stage ensures sufficient drive amplitude and edge-speed for driving the current modulator differential pair. The modulation current is sunk from the common emitter node of the differential pair by means of a modulation current generator, which is digitally controlled by the 2-wire interface and control logic block. The collector nodes of the differential pair are connected to the output pins DOUT+/DOUT–, which include on-chip 2 × 60-Ω back-termination to VCC. The 60-Ω back-termination helps to sufficiently suppress signal distortion caused by double reflections for VCSEL diodes with impedances ranging from 50 Ω through 75 Ω. MODULATION CURRENT GENERATOR The modulation current generator provides the current for the current modulator described above. The circuit is digitally controlled by the 2-wire interface and control logic block. An 8-bit wide control bus, MODC, is used to set the desired modulation current. Furthermore, two modulation current ranges are selected by means of the MODR signal. The ENA signal enables or disables the modulation current generator. The modulation current can be disabled by setting the DIS input pin to a high level. The modulation current is also disabled in a fault condition if the fault detection enable register flag FLTEN is set. For more information about the register functionality, see the register mapping description. 2-WIRE SERIAL INTERFACE AND CONTROL LOGIC The ONET4291VA uses a 2-wire serial interface for digital control. A simplified block diagram of this interface is shown in Figure 2. The two circuit inputs, SDA and SCK, are driven, respectively, by the serial data and serial clock from a microprocessor, for example. Both inputs include 100-kΩ pullup resistors to VCC. For driving these inputs, an open drain output is recommended. A write cycle consists of a START command, three address bits with MSB first, eight data bits with MSB first, and a STOP command. In idle mode, both SDA and SCK lines are at a high level. A START command is initiated by the falling edge of SDA with SCK at a high level, transitioning to a low level. Bits are clocked into an 11-bit wide shift register during the high level of the system clock SCK. A STOP command is detected on the rising edge of SDA after SCK has changed from a low to a high level. At the time of detection of a STOP command, the eight data bits from the shift register are copied to a selected 8-bit register. Register selection occurs according to the three address bits in the shift register, which are decoded to eight independent select signals using a 3 to 8 decoder block. In the ONET4291VA, only addresses 0 (000b) through 3 (011b) are used. 3 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 SDA 11 Bit Shift Register SCK 8 Bits Data 3 Bits Addr 3 8 8 START 000 001 STOP 010 8 8 Bit Register Modulation Current (8 Bit) 011 100 101 3 to 8 Decoder Start/Stop Detector Logic 8 Bit Register Control Functions (6 Bit) Unused (2 Bit) 110 8 111 8 Bit Register Bias Current (8 Bit) 8 8 Bit Register Unused (8 Bit) B0068-02 Figure 2. Simplified 2-Wire Interface Block Diagram The timing definition for the serial data signal SDA and the serial clock signal SCK is shown in Figure 3. The corresponding timing requirements are listed in Table 1. 4 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 START 1 0 1 0 1 1 STOP DTAF DTAR DTAHI DTAWT SDA SCK STRTHLD DTASTP CLKR DTAHLD CLKF STOPSTP CLKHI T0077-01 Figure 3. 2-Wire Interface Timing Diagram Table 1. 2-Wire Interface Timing PARAMETER DESCRIPTION MIN MAX 10 UNIT STRTHLD START hold time Time required from data falling edge to clock falling edge at START CLKR, DTAR Clock and data rise time Clock and data rise time ns CLKF, DTAF Clock and data fall time Clock and data fall time CLKHI Clock high time Minimum clock high period 50 ns DTAHI Data high time Minimum data high period 100 ns DTASTP Data setup time Minimum time from data rising edge to clock rising edge 10 ns DTAWT Data wait time Minimum time from data falling edge to data rising edge 50 ns DTAHLD Data hold time Minimum time from clock falling edge to data falling edge 10 ns STOPSTP STOP setup time Minimum time from clock rising edge to data rising edge at STOP 10 ns 10 ns 10 ns REGISTER MAPPING The register mapping for the register addresses 0 (000b) through 3 (011b) are shown in Table 2 to Table 5. Register 3 is included for future enhancements. It is not used in the current device. Table 6 describes the circuit functionality based on the register settings. Table 2. Register 0 (000b) Mapping address 0 (000b) bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 ENA PDP PDR OLE FLTEN MODR – – 5 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 Table 3. Register 1 (001b) Mapping address 1 (001b) bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 MODC7 MODC6 MODC5 MODC4 MODC3 MODC2 MODC1 MODC0 Table 4. Register 2 (010b) Mapping address 2 (010b) bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 BIASC7 BIASC6 BIASC5 BIASC4 BIASC3 BIASC2 BIASC1 BIASC0 Table 5. Register 3 (011b) Mapping address 3 (011b) bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 – – – – – – – – Table 6. Register Functionality Symbol Register Function ENA Enable Enables chip when set to 1. Can be toggled to reset a fault condition. PDP Photodiode polarity Photodiode polarity bit: 1 = common anode 0 = common cathode PDR Photodiode current range Photodiode current range bit: 1 = 0 µA – 500 µA with 2-µA resolution 0 = 0 µA – 250 µA with 1-µA resolution OLE Open loop enable Open loop enable bit: 1 = open loop bias current control 0 = closed loop bias current control FLTEN Fault detection enable Fault detection enable bit: 1 = fault detection on 0 = fault detection off MODR Modulation current range Laser modulation current range: 1 = 0 mA – 15 mA 0 = 0 mA – 12 mA MODC7 Modulation current bit 7 (MSB) Modulation current setting: MODC6 Modulation current bit 6 MODC5 Modulation current bit 5 MODR = 1 (see above): MODC4 Modulation current bit 4 Modulation current: 100 µA – 15.4 mA with 68 µA step size MODC3 Modulation current bit 3 MODC2 Modulation current bit 2 MODR = 0 (see above): MODC1 Modulation current bit 1 Modulation current: 100 µA – 12 mA with 51 µA step size MODC0 Modulation current bit 0 (LSB) BIASC7 Bias current bit 7 (MSB) closed loop (APC): BIASC6 Bias current bit 6 Coupling ratio CR between VCSEL bias current and photodiode current is: BIASC5 Bias current bit 5 CR = IBIAS-VCSEL / IPD BIASC4 Bias current bit 4 PDR = 0 (see above), BIASC = 0 .. 255, IBIAS-VCSEL≤ 12 mA: BIASC3 Bias current bit 3 IBIAS-VCSEL = 100 µA + (1 µA × CR × BIASC) BIASC2 Bias current bit 2 PDR = 1 (see above), BIASC = 0 .. 255, IBIAS-VCSEL≤ 12 mA: BIASC1 Bias current bit 1 IBIAS-VCSEL = 100 µA + (2 µA × CR × BIASC) BIASC0 Bias current bit 0 (LSB) open loop: IBIAS-VCSEL = 100 µA + (47 µA × BIASC) 6 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 BIAS CURRENT GENERATION AND APC LOOP The bias current generation and APC loop are controlled by means of the 2-wire interface. In open loop operation, selected by setting OLE = 1 (bit 4 of register 0), the bias current is set directly by the 8-bit wide control word BIASC[0..7] (register 2). In automatic power control mode, selected by setting OLE = 0, the bias current depends on the register settings BIASC[0..7] and the coupling ratio (CR) between the VCSEL bias current and the photodiode current. CR = IBIAS-VCSEL / IPD. Two photodiode current ranges can be selected by means of the PDR register (bit 5 of register 0). The photodiode range should be chosen to keep the laser bias control DAC close to the center of its range. This keeps the laser bias current setpoint resolution high and the loop settling time constant within specification. For details regarding the bias current setting in open loop as well as in closed loop mode, see Table 6. In closed loop mode, the photodiode polarity bit, PDP, must be set for common anode or common cathode configuration to ensure proper operation. In open loop mode if a photodiode is still present, the photodiode polarity bit must be set to the opposite setting. ANALOG REFERENCE The ONET4291VA is supplied by a single 3.3-V ±10% supply voltage connected to the VCC pins. This voltage is referenced to ground (GND). On-chip bandgap voltage circuitry generates a reference voltage, independent of the supply voltage, from which all other internally required voltages and bias currents are derived. An external zero temperature coefficient resistor must be connected from the RZTC pin of the device to ground (GND). This resistor is used to generate a precise zero TC current which is used as a reference current for the on-chip DACs. In order to minimize the module component count, the ONET4291VA VCSEL driver provides an on-chip temperature sensor. The output voltage of the temperature sensor is available at the TS pin. The voltage is VTS = 9.4 mV × TEMP + 1337 mV with TEMP given in °C. Note that the voltage at TS is not buffered. As a result, TS can only drive capacitive loads. POWER-ON RESET AND REGISTER LOADING SEQUENCE The ONET4291VA has power on reset circuitry which ensures that all registers are reset to zero during startup. After the power-on to initialize time (TINIT1), the internal registers are ready to be loaded. It is important that the registers are loaded in the following order: 1. Bias current register (register 2, 010b), 2. Modulation current register (register 1, 001b), 3. Control register (register 0, 000b). The part will be ready to transmit data after the initialize to transmit time TINIT2, assuming that the control register enable bit ENA is 1 and the disable pin DIS is low. The ONET4291VA can be disabled using either the ENA control register bit or the disable pin DIS. In both cases the internal registers are not reset. After the disable pin DIS is de-asserted and/or the enable bit ENA is re-asserted the part returns to its prior output settings. LASER SAFETY FEATURES AND FAULT RECOVERY PROCEDURE The ONET4291VA provides built in laser safety features. The following fault conditions are detected: 1. Voltage at MONB exceeds 1.2 V, 2. Photodiode current exceeds 150% of its target value, 3. Bias control DAC drops in value by more than 33% in one step. If one or more fault conditions occur and the fault enable bit FLTEN is set to 1, the ONET4192VA responds by: 1. Setting the VCSEL bias current to zero. 7 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 2. Setting the modulation current to zero. 3. Asserting and latching the FLT pin. Fault recovery is performed by the following procedure: 1. The disable pin DIS and/or the enable control bit ENA are toggled for at least the fault latch reset time TRESET. 2. The FLT pin de-asserts while the disable pin DIS is asserted or the enable bit ENA is de-asserted. 3. If the fault condition is no longer present, the part will return to normal operation with its prior output settings after the disable negate time TON. 4. If the fault condition is still present, FLT re-asserts once DIS is set to low level and the part will not return to normal operation. PACKAGE For the ONET4291VA, a small footprint 4 mm × 4 mm 20-pin QFN package with a lead pitch of 0,5 mm is used. The pin out is shown in Figure 4. 16 17 18 1 15 2 14 EP 3 13 PD VCC CAPC MONP MONB VCC DIN+ DIN− VCC FLT 10 11 9 5 8 12 7 4 6 DIS RZTC TS SCK SDA 19 20 GND MOD MOD+ GND BIAS RGP PACKAGE (TOP VIEW) P0031-01 Figure 4. Pinout of ONET4291VA in a 4 mm × 4 mm 20-Pin QFN Package TERMINAL FUNCTIONS TERMINAL NO. 8 NAME TYPE CMOS-in DESCRIPTION 1 DIS 2 RZTC 3 TS 4 SCK CMOS-in 2-wire interface serial clock. Includes a 100-kΩ pullup resistor to VCC. 5 SDA CMOS-in 2-wire interface serial data input. Includes a 100-kΩ pullup resistor to VCC. 6, 9, 14 VCC Supply 7 DIN+ Analog-in Non-inverted data input. On-chip differentially 100-Ω terminated to DIN–. Must be ac coupled. 8 DIN– Analog-in Inverted data input. On-chip differentially 100-Ω terminated to DIN+. Must be ac coupled. 10 FLT CMOS-out Fault detection flag 11 MONB Analog-out Bias current monitor. Sources an 8.3% replica of the bias current. Connect an external resistor to ground (GND). If the voltage at this pin exceeds 1.2 V a fault is triggered. Analog Analog-out Disables both bias and modulation current when set to high state. Toggle to reset a fault condition Connect external zero TC 30-kΩ to ground (GND). Used to generate a defined zero TC reference current for internal DACs. Temperature sensor output. Not buffered, capacitive load only. 3.3-V ±10% supply voltage ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 TERMINAL FUNCTIONS (continued) TERMINAL NO. NAME TYPE DESCRIPTION 12 MONP Analog-out Photodiode current monitor. Sources a 50% replica of the photodiode current. Connect an external resistor to ground (GND). 13 CAPC Analog Compensation pin used to control the bandwidth of the APC loop. Connect a 0.01-µF capacitor to ground. 15 PD Analog Monitor photodiode input. The pin can source or sink current dependent on PDP register setting. Pin supplies >1.5-V reverse bias. 16 BIAS Analog VCSEL diode bias current source. Connect to laser anode through inductor. Murata BLM15HG102SN1 is recommended. 17, 20, EP GND Supply Circuit ground. The exposed die pad (EP) must be grounded. 18 MOD+ CML-out Non-inverted modulation current output. AC coupled to anode of common cathode VCSEL. On-chip 60-Ω back-terminated to VCC. 19 MOD– CML-out Inverted modulation current output. AC coupled through VCSEL matching resistor to ground (GND). On-chip 60-Ω back-terminated to VCC. ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VALUE / UNIT VCC Supply voltage –0.3 V to 4 V VDIS, VRZTC, VTS, VSCK, VSDA, VDIN+, Voltage at DIS, RZTC, TS, SCK, SDA, DIN+, DIN–, FLT, MONB, MONP, VDIN–, VFLT, VMONB, VMONP, VCAPC, CAPC, PD, BIAS, MOD+, MOD– (2) VPD, VBIAS, VMOD+, VMOD– –0.3 V to 4 V ESD ESD rating at all pins TJ,max Maximum junction temperature TSTG Storage temperature range –65°C to 85°C TA Characterized free-air operating temperature range –40°C to 85°C TLEAD Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (1) (2) 3 kV (HBM) 125°C 260°C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. RECOMMENDED OPERATING CONDITIONS PARAMETER CONDITIONS VCC Supply voltage VIH CMOS input high voltage DIS, SCK, SDA VIL CMOS input low voltage DIS, SCK, SDA Bias output headroom voltage VCC– VBIAS, IBIAS = 10 mA Photodiode current range RRZTC Zero TC resistor value (1) VIN Differential input voltage swing tR-IN Input rise time tF-IN Input fall time TA Operating free-air temperature (1) MIN TYP MAX 2.9 3.3 3.6 2 V V 0.8 500 V mV Control bit PDR = 1, step size = 2 µA 10 500 Control bit PDR = 0, step size = 1 µA 5 250 1.22-V bias across resistor UNIT µA 29.7 30 30.3 kΩ 200 800 2400 mVp-p 20%–80%, fBIT = 1.25 Gbps 160 20%–80%, fBIT≥ 2.125 Gbps 100 20%–80%, fBIT = 1.25 Gbps 160 20%–80%, fBIT≥ 2.125 Gbps 100 –40 85 ps ps °C Changing the value alters DAC ranges. 9 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 DC ELECTRICAL CHARACTERISTICS over recommended operating conditions, all values are for open loop operation, IMOD = 6 mA, IBIAS = 5 mA, and RRZTC = 30 kΩ, unless otherwise noted PARAMETER VCC TEST CONDITIONS Supply voltage MIN 2.9 TYP MAX 3.3 3.6 IMOD = 6 mA, IBIAS = 5 mA, including IMOD and IBIAS 40 45 Disabled, DIS = high and/or control bit ENA = low 22 UNIT V IVCC Supply current RIN Data input/output resistance Differential between DIN+/DIN– 85 100 115 ROUT Data output/output resistance Single-ended to VCC 50 60 70 Ω CMOS input current SCK, SDA, 100-kΩ pullup to VCC –50 10 µA 10 µA CMOS input current DIS –10 VOH CMOS output high voltage FLT, ISINK = 1 mA 2.5 VOL CMOS output low voltage FLT, ISOURCE = 1 mA IBIAS-DIS Bias current during disable IBIAS-MIN Minimum bias current See IBIAS-MAX Maximum bias current DAC set to maximum, closed loop 8.5 DAC set to maximum, open loop 11 Photodiode reverse bias voltage APC active, IPD = max 1.5 Photodiode fault current level Percent of target IPD (2) Temperature sensor voltage range –40°C to 120°C junction temperature. Capacitive load only. After mid-scale calibration. Temperature sensor accuracy Mid scale calibration Temperature sensor drive current Source or sink (2) Photodiode current monitor ratio IMONP / IPD, IBIAS > 100 µA 45% 60% 80% Bias current monitor ratio IMONB / IBIAS (nominal 1/12 = 8.3%) 6.7% 8.3% 10% VCC-RST VCC reset threshold voltage VCC voltage level which triggers power-on reset 2.4 2.6 2.85 VCCRSTHYS VCC reset threshold voltage hysteresis VMONB-FLT Fault voltage at MONB VPD VTS ITS (1) (2) mA Ω V 0.5 (1) V 100 µA 0.2 mA mA 2.1 V 150% 0.8 2.5 V 10 µA ±3 –10 °C V 120 Fault occurs if voltage at MONB exceeds value 1.05 1.2 mV 1.45 V The bias current can be set below the specified minimum according to the corresponding register setting described in the register mapping section above, however in closed loop operation settings below the specified value may trigger a fault. Assured by simulation over process, supply, and temperature variation. AC ELECTRICAL CHARACTERISTICS over recommended operating conditions with 50-Ω output load, open loop operation, IMOD = 6 mA, IBIAS = 5 mA, and RRZTC = 30 kΩ (unless otherwise noted) MIN TYP (1) MAX 20%–80%, tR-IN = 160 ps, single-ended VIN > 400 mVpp 60 125 20%–80%, tR-IN = 100 ps, single-ended VIN > 400 mVpp 35 100 20%–80%, tF-IN = 160 ps, single-ended VIN > 400 mVpp 60 125 20%–80%, tF-IN = 100 ps, single-ended VIN > 400 mVpp 35 100 PARAMETER TEST CONDITIONS tR-OUT Output rise time tF-OUT Output fall time IMOD-MAX Maximum modulation current IMOD-STEP Modulation current step size DJ Deterministic output jitter fBIT = 4.25 Gbps, excluding DJ caused by duty cycle distortion 7 DCD Duty cycle distortion fBIT = 4.25 Gbps 8 (1) 10 Control bit MODR = 1, 50-Ω load 11.5 Control bit MODR = 0, 50-Ω load 9 ps ps mA Control bit MODR = 1, 50-Ω load 68 Control bit MODR = 0, 50-Ω load 51 Typical operating condition is at VCC = 3.3 V and TA = 25°C. UNIT µA 20 psp-p psp-p ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 AC ELECTRICAL CHARACTERISTICS (continued) over recommended operating conditions with 50-Ω output load, open loop operation, IMOD = 6 mA, IBIAS = 5 mA, and RRZTC = 30 kΩ (unless otherwise noted) PARAMETER MIN TYP (1) TEST CONDITIONS τAPC APC time constant CAPC 0.01 µF, IPD = 100 µA, PD coupling ratio CR = 1/40 (2) TOFF Transmitter disable time Rising edge of DIS to IBIAS≤ 0.1 x IBIAS-NOMINAL (2) TON Disable negate time Falling edge of DIS to IBIAS≥ 0.9 x IBIAS-NOMINAL TINIT1 Power-on to initialize Power-on to registers ready to be loaded TINIT2 Initialize to transmit Register load STOP command to part ready to transmit valid data (2) TRESET DIS pulse width Time DIS must held high to reset part (2) TFAULT Fault assert time Time from fault condition to FLT high (2) (2) MAX UNIT µs 200 2.4 5 µs 1 ms 20 250 ms 2 ms 50 µs (2) 100 ns Assured by simulation over process, supply, and temperature variation. 11 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 TYPICAL CHARACTERISTICS Typical operating condition is at VCC = 3.3 V and TA = 25°C (unless otherwise noted) BIAS-MONITOR CURRENT IMONB vs BIAS CURRENT DETERMINISTIC JITTER vs MODULATION CURRENT 1.0 16 14 0.8 Deterministic Jitter − psPP IMONB − Bias-Monitor Current − mA 0.9 0.7 0.6 0.5 0.4 0.3 12 10 8 6 4 0.2 2 0.1 0.0 0 0 2 4 6 8 10 12 0 2 Bias Current − mA 8 10 Figure 5. Figure 6. RANDOM JITTER vs MODULATION CURRENT RANDOM JITTER vs TEMPERATURE 3.0 3.0 2.5 2.5 2.0 1.5 1.0 0.5 12 14 16 G002 Random Jitter − psrms Random Jitter − psrms 6 Modulation Current − mA G001 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 16 Modulation Current − mA G003 Figure 7. 12 4 0.0 −40 −20 0 20 40 60 TA − Free-Air Temperature − °C Figure 8. 80 100 G004 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 TYPICAL CHARACTERISTICS (continued) Typical operating condition is at VCC = 3.3 V and TA = 25°C (unless otherwise noted) RISE-TIME AND FALL-TIME vs MODULATION CURRENT BIAS CURRENT IN OPEN LOOP MODE vs BASIC REGISTER SETTING 50 14 45 12 35 Open Loop Bias Current − mA tt − Transition Time − ps 40 Rise Time 30 25 Fall Time 20 15 10 10 8 6 4 2 5 0 0 0 2 4 6 8 10 12 14 16 0 Modulation Current − mA 2 4 6 8 10 12 14 Bias Current Register Setting − mA G005 G006 Figure 9. Figure 10. MODULATION CURRENT vs MODC REGISTER SETTING SUPPLY CURRENT vs TEMPERATURE 50 16 14 12 Supply Current − mA Modulation Current − mA 45 10 8 6 40 35 30 4 25 2 0 0 2 4 6 8 10 12 14 16 Modulation Current Register Setting − mA G007 Figure 11. 20 −40 −20 0 20 40 60 TA − Free-Air Temperature − °C 80 100 G008 Figure 12. 13 ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 TYPICAL CHARACTERISTICS (continued) Typical operating condition is at VCC = 3.3 V and TA = 25°C (unless otherwise noted) EYE-DIAGRAM AT 4.25 GBPS K28.5 PATTERN, IMOD = 10 mA Single-Ended Output Voltage − 60 mV/Div Single-Ended Output Voltage − 100 mV/Div EYE-DIAGRAM AT 4.25 GBPS K28.5 PATTERN, IMOD = 5 mA t − Time − 40 ps/Div t − Time − 40 ps/Div G010 G009 Figure 14. EYE-DIAGRAM AT 4.25 GBPS K28.5 PATTERN, IMOD = 15 mA EYE-DIAGRAM AT 1.0625 GBPS K28.5 PATTERN, IMOD = 15 mA Single-Ended Output Voltage − 150 mV/Div Single-Ended Output Voltage − 150 mV/Div Figure 13. t − Time − 157 ps/Div t − Time − 40 ps/Div G012 G011 Figure 15. 14 Figure 16. ONET4291VA www.ti.com SLLS674 – SEPTEMBER 2005 APPLICATION INFORMATION Figure 17 shows a typical application circuit using the ONET4291VA with a common cathode VCSEL connected to ground. The VCSEL driver is controlled via the 2-wire interface SDA/SCK by a microprocessor. In a typical application, the FLT, MONB, MONP, and TS outputs are connected to the microcontroller for transceiver management purposes. The component values in Figure 17 are typical examples and may be varied according to the intended application. DIS SDK TS RZTC SDA C1 0.1 µF DIS RZTC TS SCK SDA 30 kΩ VCC GND DIN+ DIN+ MOD− DIN− DIN− PD BIAS VCC FLT CAPC GND MONP 50 Ω MOD+ VCC MONB C2 0.1 µF ONET4291VA 20-Lead QFN C3 0.1 µF C4 0.1 µF L1 BLM15HG102SN1 VCSEL Laserdiode VCC Monitor Photodiode FLT MONP RMONB 1 kΩ RMONP 10 kΩ MONB C5 0.01 µF S0100-01 Figure 17. Basic Application Circuit With a Common Cathode VCSEL 15 PACKAGE OPTION ADDENDUM www.ti.com 24-Jan-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Qty Drawing Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) ONET4291VARGPR ACTIVE QFN RGP 20 2500 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR & no Sb/Br) -40 to 85 ONET 4291V ONET4291VARGPRG4 ACTIVE QFN RGP 20 2500 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR & no Sb/Br) -40 to 85 ONET 4291V ONET4291VARGPT ACTIVE QFN RGP 20 250 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR & no Sb/Br) -40 to 85 ONET 4291V ONET4291VARGPTG4 ACTIVE QFN RGP 20 250 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR & no Sb/Br) -40 to 85 ONET 4291V (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Only one of markings shown within the brackets will appear on the physical device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 24-Jan-2013 Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant ONET4291VARGPR QFN RGP 20 2500 330.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 ONET4291VARGPT QFN RGP 20 250 180.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) ONET4291VARGPR QFN RGP 20 2500 367.0 367.0 35.0 ONET4291VARGPT QFN RGP 20 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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