GBJ/KBJ10A thru GBJ/KBJ10M SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS CHENG- YI ELECTRONIC REVERSE VOLTAGE -50 to 1000 Volts FORWARD CURRENT -10.0 Amperes HIKE FOR NO. 6 SCRES 5.16 FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability Reliable low cost construction utilizing molded plastic technique results in inexpensive product The plastic material has UL flammability classification 94V-O SPACING MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 250C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL GBJ KBJ 10A GBJ KBJ 10B GBJ KBJ 10D GBJ KBJ 10G GBJ KBJ 10J GBJ KBJ 10K GBJ KBJ 10M UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Voltage VDC 50 100 200 400 600 800 1000 V CHARACTERISTICS 10.0 Maximum Average Forward (with heatsink Note 2) Rectified Current @ TC=110 C (without heatsink) I(AV) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200 A VF 1.05 V 0 Maximum Forward Voltage at 5.0A DC Maximum DC Reverse Current at rated DC Blocking Voltage @ TJ=250C @ TJ=1250C IR A 3.0 5.0 A 500 I2 t Rating for fusing (t<8.3ms) I2 t 120 A2S Typical Junction Capacitance per element (Note 1) CJ 55 PF Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range R JC 1.4 0 C/W TJ -55 to +150 0 TSTG -55 to +150 0 NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Device mounted on 150mm x 150mm X 1.6mm Cu Plate Heatsink. C C GBJ/KBJ10A thru GBJ/KBJ10M SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS CHENG- YI ELECTRONIC RATING AND CHARACTERISTICS CURVES GBJ/KBJ10A THRU GBJ/KBJ10M FIG. 2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG. 1 - FORWARD CURRENT DERATING CURVE 6.0 180 WITH HEATSINK 160 5.0 140 120 4.0 100 3.0 WITHOUT HEATSINK 2.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.0 0 20 40 60 80 100 120 80 60 40 Single Half Sine-Wave (JEDEC METHOD) 20 0 140 1 2 5 0 FIG. 3 - TYPICAL JUNCTION CAPACITANCE 20 50 100 FIG. 4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, (A) 10 10 1.0 0.1 0 TJ=25C PULSE WIDTH:300 0 TJ=25C, f= 1MHz 1.0 1.0 4.0 10.0 100 0 0.2 0.4 0.6 FIG. 5 - TYPICAL REVERSE CHARACTERISTICS 0 TJ=125C 0 TJ=100C 10 TJ=500C 1.0 TJ=250C 0.1 0 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 1000 100 S 0.01 REVERSE VOLTAGE, VOLTS INSTANTANEOUS REVERSE CURRENT, ( A) CAPACITANCE, (pF) 10 NUMBER OF CYCLES AT 60Hz CASE TEMPERATURE, C 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 1.8