CHENMKO ENTERPRISE CO.,LTD CH857SPT SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP transistors in one package. (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 CONSTRUCTION * Two PNP transistors in one package. 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT C1 B2 E2 6 5 4 2.15~2.45 TR2 TR1 1 2 3 E1 B1 C2 SC-88/SOT-363 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -50 V VCEO collector-emitter voltage open base − -45 V VCES collector-base voltage open emitter − -50 V VEBO emitter-base voltage open collector − -5 V IC collector current (DC) − -100 mA ICM peak collector current − -200 mA IBM peak base current − -2 mA Ptot total power dissipation − 300 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-01 RATING CHARACTERISTIC ( CH857SPT ) THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT note 1 415 K/W thermal resistance from junction to ambient Rth j-s Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current MIN. TYP. MAX. UNIT IE = 0; VCB = 30 V − − -15 nA IC = 0; VCB = 30 V; TA = 150 OC − − -4.0 uA nA IEBO emitter cut-off current IC = 0; VEB = - 4 V − − -15 hFE DC current gain IC = -2.0 mA; VCE = -5.0V; note 1 125 − 630 VCEsat collector-emitter saturation voltage IC = -10 mA ; IB = -0.5 mA IC = -100 mA ; I B = -5 mA − − -300 mV − − -650 mV base-emitter saturation voltage IC = -2.0 mA;VCE =- 5.0 V -600 − -750 mV IC = -10 mA;VCE = -5.0 V − − -820 mV VBEsat Cc collector capacitance IE = ie = 0; VCB = -10V; f = 1 MHz − 3.5 − pF fT transition frequency 200 − MHz NF noise figure IC = -10mA; VCE = - 5 V ; − f = 100 MHz IC = -0.2 mA; VCE = - 5V;Rs = 2.0KΩ − f = 1.0 KHz; BW = 200KHz 2.5 − dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 ° 125 C 300 25 C ° 200 100 0 0.01 - 40 C ° 0 .1 1 10 100 I C - COLLECTOR CURRENT (mA) VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN RATING CHARACTERISTIC CURVES ( CH857SPT ) Collector-Emitter Saturation Voltage vs Collector Current 0. 3 β = 10 0.25 0. 2 0.15 ° 25 C 0. 1 0.05 ° 125 C ° - 40 C 0 0.1 1 10 10 0 I C - COLLECTOR CURRE NT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 ° - 40 C 0.8 ° 25 C 0.6 ° 125 C 0.4 0.2 0 0.1 1 10 10 0 300 I C - COLLECTOR CURRE NT (mA) V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) RATING CHARACTERISTIC CURVES ( CH857SPT ) Base Emitter ON Voltage vs Collector Current 1 ° 0.8 - 40 C ° 125 C 0.4 V CE = 5V 0.2 0 0.1 1 1 0. 1 0.01 75 10 0 125 ° V CE - COLLECTOR-EMITTER VOLTAGE (V) T A - AMBIE NT TEMP ERATURE ( C) BVCER - BREAKDOWN VOLTAGE (V) V CB = 50V 10 50 90 85 80 75 70 0.1 100 uA 300 mA 50 mA 1 10 100 1000 RESISTANCE (k Ω) 100 Ta = 25 °C 3 1 Input and Output Capacitance vs Reverse Voltage 4 Ic = 200 95 Collector Saturation Region 2 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base f = 1.0 MHz CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 0 25 10 I C - COLLECTOR CURRE NT (mA) Collector-Cutoff Current vs Ambient Temperature 10 ° 25 C 0.6 10 Cib Cob 0 100 300 700 I B - BASE CURRENT (uA) 2000 4000 0.1 1 10 V CE - COLLECTOR VOLTAGE (V) 100 f T - GAIN BANDWIDTH PRODUCT (MHz) RATING CHARACTERISTIC CURVES ( CH857SPT ) Switching Times vs Collector Current Gain Bandwidth Product vs Collector Current 40 300 Vce = 5V 270 ts 240 30 TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf tr 60 30 td 0 0 10 20 50 10 100 150 20 30 Power Dissipation vs Ambient Temperat ure 500 400 300 200 100 0 0 50 100 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) PD - POWE R DIS SIPATION (W) 1 25 50 75 100 ° TE MPE RATURE ( C) 125 150 200 300