CHENMKO ENTERPRISE CO.,LTD CHT2222N1PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FBPT-923 FEATURE * Small surface mounting type. (FBPT-923) * High current (Max.=600mA). * Suitable for high packing density. 0.5±0.05 1.0±0.05 * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. 0.37(REF.) 1.0±0.05 0.25(REF.) CONSTRUCTION 0.05±0.04 * NPN Switching Transistor 0.68±0.05 0.42±0.05 3 CIRCUIT 0.3±0.05 1 0.26±0.05 2 FBPT-923 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 600 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation − 100 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 V 2006-07 RATING CHARACTERISTIC CURVES ( CHT2222N1PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 60 V − 10 nA IC = 0; VCB = 60 V; Tj = 125 OC − 10 uA IEBO emitter cut-off current IC = 0; VEB = 5 V − 10 nA hFE DC current gain IC = 0.1 mA; VCE = 10V; note 1 35 − IC = 1.0 mA; VCE = 10V 50 75 − − IC = 10 mA; VCE = 10V;Tamb = -55OC 35 − IC = 150 mA; VCE = 10V 100 300 IC = 150 mA; VCE = 1.0V 50 − IC = 500 mA; VCE = 10V 40 − collector-emitter saturation voltage IC = 150 mA; IB = 15 mA − 300 mV IC = 500 mA; IB = 50 mA − 1 V base-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.6 1.2 V IC = 500 mA; IB = 50 mA − 2.0 V IC = 10 mA; VCE = 10V VCEsat VBEsat Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 25 pF fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 1.0 kHz − 4 dB Switching times (between 10% and 90% levels); − 35 ns − 15 ns rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA V CE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) 500 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) 500 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current V BESAT - BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN RATING CHARACTERISTIC CURVES ( CHT2222N1PT ) 0.4 = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) Collector-Emitter Saturation Voltage vs Collector Current 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (° C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 RATING CHARACTERISTIC CURVES ( CHT2222N1PT ) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Switching Times vs Collector Current 400 Ic V cc = 25 V TIME (nS) V cc = 25 V 160 240 ts 160 tr t off 80 tf 80 t on td 100 I C - COLLECTOR CURRENT (mA) 1000 0 10 100 I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 10 320 240 0 10 Ic I B1 = I B2 = 10 320 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 1000