CHENMKO CHT4401PT

CHENMKO ENTERPRISE CO.,LTD
CHT4401PT
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts
CURRENT 0.6 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SOT-23
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
.019 (0.50)
.041 (1.05)
.033 (0.85)
* Low current (Max.=600mA).
* Suitable for high packing density.
.066 (1.70)
CONSTRUCTION
.110 (2.80)
.082 (2.10)
.119 (3.04)
(1)
.018 (0.30)
* Small flat package. ( SOT-23 )
(3)
(2)
* NPN Switching Transistor
MARKING
.103 (2.64)
.086 (2.20)
.045 (1.15)
.033 (0.85)
3
CIRCUIT
.007 (0.177)
* S1P
.028 (0.70)
.020 (0.50)
.002 (0.05)
.055 (1.40)
.047 (1.20)
1
2
SOT-23
Dimensions in inches and (millimeters)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current DC
−
600
mA
Ptot
total po wer dissipation
−
350
mW
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−55
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 °C; note 1
2004-11
RATING CHARACTERISTIC CURVES ( CHT4401PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
200
°C/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 60 V
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6 V
−
50
nA
hFE
DC current gain
VCE = 1 V; note 1
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 1 50 mA
V CE = 2 V;note 2
IC = 500 mA
20
40
80
100
−
−
−
300
40
−
−
−
400
mV
750
mV
750
−
950
1200
mV
mV
VCEsat
VBEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 1 5 mA
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 5 0 mA
IC = 500 mA; IB = 5 0 mA
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 4 0 K Hz −
6.5
pF
Ce
emitter capacitance
IC = ic = 0; VBE = 500 mV;
f = 140KHz
−
30
pF
fT
transition frequency
IC = 20 mA; VCE = 10 V;
f = 100 MHz
250
−
MHz
Switching times (between 10% and 90% levels);
−
35
ns
−
15
ns
rise time
−
20
ns
toff
turn-off time
−
250
ns
ts
storage time
−
200
ns
tf
fall time
−
60
ns
ton
turn-on time
td
delay time
tr
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
ICon = 150 mA; IBon = 15 mA;
IBoff = −1 5 mA
RATING CHARACTERISTIC CURVES ( CHT4401PT )
V CE = 5V
400
125 °C
300
200
25 °C
100
- 40 °C
0
0.1
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
500
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
V BESAT - BASE-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
0.4
β = 10
0.3
125 °C
0.2
25 °C
0.1
- 40 °C
1
10
100
I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
500
100
V
CB
20
= 40V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
Collector-Emitter Saturation
Voltage vs Collector Current
10
1
0.1
f = 1 MHz
16
12
C
8
C ob
4
25
50
75
100
125
T A - AMBIENT TEMPERATURE (° C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
RATING CHARACTERISTIC CURVES ( CHT4401PT )
Turn On and Turn Off Times
vs Collector Current
400
I B1 = I B2 =
Switching Times
vs Collector Current
400
Ic
320
TIME (nS)
V cc = 25 V
240
160
240
ts
160
tr
t off
80
tf
80
t on
td
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
100
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (nS)
10
320
V cc = 25 V
0
10
Ic
I B1 = I B2 =
10
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
1000
V CE = 10 V
T A = 25oC
6
hoe
4
h re
2
h fe
h ie
0
0
10
20
30
40
50
I C - COLLECTOR CURRENT (mA)
60
CHAR. RELATIVE TO VALUES AT TA = 25oC
Common Emitter Characteristics
8
CHAR. RELATIVE TO VALUES AT VCE = 10V
CHAR. RELATIVE TO VALUES AT I C= 10mA
RATING CHARACTERISTIC CURVES ( CHT4401PT )
Common Emitter Characteristics
2.4
V CE = 10 V
I C = 10 mA
2
h re
h fe
1.6
hoe
1.2
0.8
0.4
0
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
Common Emitter Characteristics
1.3
I C = 10 mA
T A = 25oC
1.25
h fe
1.2
1.15
h ie
1.1
1.05
1
h re
0.95
0.9
0.85
hoe
0.8
0.75
0
5
h ie
10
15
20
25
30
VCE - COLLECTOR VOLTAGE (V)
35
100
RATING CHARACTERISTIC CURVES ( CHT4401PT )
Test Circuits
30 V
200 Ω
16 V
Ω
1.0 KΩ
0
≤ 200ns
500 Ω
FIGURE 1: Saturated Turn-On Switching Timer
6.0 V
- 1.5 V
NOTE: BV EBO = 5.0 V
1k
30 V
Ω
1.0 KΩ
0
≤ 200ns
50 Ω
FIGURE 2: Saturated Turn-Off Switching Time
37 Ω