CHENMKO ENTERPRISE CO.,LTD CH3904N1PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FBPT-923 FEATURE * Small surface mounting type. (FBPT-923) * Low current (Max.=200mA). * Suitable for high packing density. 0.5±0.05 1.0±0.05 * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. 0.37(REF.) 1.0±0.05 0.25(REF.) CONSTRUCTION 0.05±0.04 * NPN Switching Transistor 0.68±0.05 0.42±0.05 3 CIRCUIT 0.3±0.05 1 0.26±0.05 2 FBPT-923 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current DC − 200 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation − 100 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 V 2006-07 RATING CHARACTERISTIC CURVES ( CH3904N1PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 30 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − 50 nA hFE DC current gain VCE = 1 V; note 1 VCEsat VBEsat IC = 0.1 mA 60 − IC = 1 mA 80 − IC = 10 mA 100 300 IC = 50 mA 60 − IC = 100 mA 30 − collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 200 mV IC = 50 mA; IB = 5 mA − 300 mV base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV IC = 50 mA; IB = 5 mA − 950 mV Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 8 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise Þgure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 5 dB Switching times (between 10% and 90% levels); − 65 ns − 35 ns rise time − 35 ns toff turn-off time − 240 ns ts storage time − 200 ns tf fall time − 50 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA RATING CHARACTERISTIC CURVES ( CH3904N1PT ) Total power dissipation Ptot = f (TS) Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 360 2 mW mA C 300 10 2 P tot 270 5 240 V BE V CE 210 180 10 1 150 120 5 90 60 30 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 0 0 0.2 0.4 0.6 Permissible pulse load DC current gain hFE = f (I C) Ptotmax / PtotDC = f (tp ) VCE = 10V, normalized 10 3 0.8 1.0 V 1.2 V BE sat , V CE sat 10 1 Ptot max Ptot DC D= tp T tp h FE T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 125 C 25 C 10 0 -55 C 5 5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 10 -1 10 -1 5 10 0 5 10 1 mA 10 2 2 ΙC RATING CHARACTERISTIC CURVES ( CH3904N1PT ) Short-circuit forward current Open-circuit output admittance transfer ratio h21e = f (IC) h22e = f (IC) VCE = 10V, f = 1MHz VCE = 10V, f = 1MHz 10 3 10 2 s h 21e h 22e 5 5 10 2 10 1 5 5 10 1 -1 10 5 10 0 mA 10 10 0 -1 10 1 5 10 0 mA ΙC ΙC Delay time td = f (IC ) 10 1 Storage time t stg = f (IC) Rise time tr = f (IC) 10 3 10 3 ns ns t r ,t d tr td ts 25 C 125 C h FE = 10 10 2 VCC = 3 V h FE = 20 10 10 2 h FE = 20 10 40 V 15 V 10 1 V BE = 2 V 10 1 0V 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC