CHENMKO ENTERPRISE CO.,LTD CHDTA114WKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 1 (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) .002 (0.05) In 2 (3) .007 (0.177) Gnd .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) (1) * One PNP transistors and bias of thin-film resistors in one package. CIRCUIT .019 (0.50) .041 (1.05) .033 (0.85) Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=10kΩ, Typ. ) .119 (3.04) * * * * .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. R2 TR R1 3 Out SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − -50 V VIN Input voltage -30 +10 V − -100 − -100 − 200 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 140 O C/W RθJ-S junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 RATING CHARACTERISTIC ( CHDTA114WKPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=-100uA; VCC=-50V -0.8 − − V VI(on) Input on voltage IO=-2mA; VO=-0.3V − − -3.0 V VO(on) Output voltage IO=-10mA; II=-0.5mA − - 0.1 - 0.3 V II Input current VI=-5V − − -0.88 mA IC(off) Output current VI=0V; VCC=-50V − − -0.5 uA hFE DC current gain IO=-10mA; VO=-5.0V 24 − − R1 Input resistor 13 KΩ Resistor ratio Transition frequency 7 0.37 − 10 R2/R1 fT 0.47 250 0.57 − MHz Note 1.Pulse test: tp≤300uS; δ≤0.02. IE=5mA, VCE=-10.0V f=100MHz =