CHENMKO ENTERPRISE CO.,LTD CHDTC114GMPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT-723 * Small surface mounting type. (SOT-723) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=10kΩ, Typ. ) (3) (2) 0.17~0.27 0.4 1.15~1.25 0.4 0.75~0.85 CONSTRUCTION 0.27~0.37 (1) 0.17~0.27 0.75~0.85 * One NPN transistors and bias of thin-film resistors in one package. 0.45~0.55 0.11~0.14 Emitter CIRCUIT Base 2 1.15~1.25 1 R1 TR SOT-723 3 Dimensions in millimeters Collector LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 50 V VCEO Collector-Emitter voltage 50 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 100 mA PD Power dissipation 150 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-06 RATING CHARACTERISTIC ( CHDTC114GMPT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage BVCEO Collector-Emitter breakdown voltage IC=1mA BVEBO Emitter-Base breakdown voltage IE=720uA IC=50uA MIN. TY P . MAX. UNIT 50.0 − − V 50.0 − − V 5.0 − − − V VCE(sat) Collector-Emitter Saturation voltage IC=10mA; IB=0.5mA − 0.3 V ICBO Collector-Base current VCB=50V − − 0.5 uA IEBO Emitter-Base current VEB=4V 300 DC current gain IC=5mA; VCE=5.0V 30 580 − uA hFE − − R1 fT Input resistor Transition frequency 7.0 − 10 250 13 − KΩ MHz Not e 1.Pulse test: tp≤300uS; δ ≤0.02. IE=-5mA, VCE=10.0V f=100MHz =