CHENMKO ENTERPRISE CO.,LTD CHDTC125TUPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. (2) Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in single resistor(R1=200kΩ, Typ. ) (3) 1.3±0.1 CONSTRUCTION (1) * * * * 0.65 2.0±0.2 0.65 0.3±0.1 1.25±0.1 * One NPN transistors and bias of thin-film resistors in one package. MARKING TUF Emitter CIRCUIT 0.8~1.1 0.05~0.2 0~0.1 0.1Min. Base 2 2.0~2.45 1 TR R1 3 Collector SC-70/SOT-323 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 50 V VCEO Collector-Emitter voltage 50 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 100 mA PD Power dissipation 200 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-06 RATING CHARACTERISTIC ( CHDTC125TUPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 50 − − V 50 − − V IE=50uA 5.0 − − V Collector cutoff current VCB=50V − − 0.5 uA Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=0.5mA/0.05mA − − 0.3 V hFE DC current gain IC=1mA; VCE=5.0V 100 250 600 R1 fT Input resistor Transition frequency 140 − 200 250 260 − BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA IC=5mA, VCE=10.0V f=100MHz KΩ MHz