CHENMKO ENTERPRISE CO.,LTD CHT55PT SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * Low voltage (Max.=60V) . * High saturation current capability. .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * Low current (Max.=500mA). * Suitable for high packing density. .066 (1.70) .110 (2.80) .082 (2.10) (1) .119 (3.04) .018 (0.30) FEATURE (3) (2) CONSTRUCTION .103 (2.64) .086 (2.20) MARKING .045 (1.15) .033 (0.85) C (3) CIRCUIT .007 (0.177) * T55 .028 (0.70) .020 (0.50) .002 (0.05) .055 (1.40) .047 (1.20) * PNP General Purpose Transistor (1) B E(2) SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -60 V VCEO collector-emitter voltage open base − -60 V VEBO emitter-base voltage open collector − -4 V IC collector current DC − -500 mA ICM peak collector current − -500 mA IBM peak base current − -100 mA Ptot total power dissipation − 350 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-5 RATING CHARACTERISTIC CURVES ( CHT55PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = -60 V − -0.1 uA IEBO emitter cut-off current IC = 0; VEB = -4 V − -0.1 uA hFE DC current gain VCE = -1.0 V; note 1 IC = -10 mA 100 − IC = -100 mA 100 − VCEsat collector-emitter saturation voltage IC = -100 mA; IB =-10 mA − -0.25 V VBEsat base-emitter saturation voltage IC = -100 mA; VCE = -1.0 V − -1.2 V Ccb collector-base capacitance IE = ie = 0; VCB =-20V ; f = 1 MHz − 3 pF fT transition frequency IC = 100 mA; VCE =-1.0 V ; f = 100 MHz 50 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.