CHENMKO ENTERPRISE CO.,LTD CHUMD22PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. SC-88/SOT-363 * Low colloector-emitter saturation. * High saturation current capability. * Both the CHDTA143Z & CHDTC143Z in one package. (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 6 4 R1 DTr2 R2 2.15~2.45 R2 DTr1 R1 1 3 SC-88/SOT-363 Dimensions in millimeters CHDTA143Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − -50 V VIN Input voltage -30 +5 V − -100 − -100 − 150 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 140 O C/W RθJ-S junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-04 CHDTC143Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -5 +30 V − 100 − 100 − 150 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C RθJ-S Thermal resistance − 140 O C/W junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. CHDTA143Z CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=-100uA; VCC=-5.0V -0.5 − − V VI(on) Input on voltage IO=-5mA; VO=-0.3V − − -1.3 V − VO(on) Output voltage IO=-5mA; II=-0.25mA V Input current VI=-5V − -0.1 − -0.3 II -1.8 mA IC(off) Output current VI=0V; VCC=-50V − − -0.5 uA hFE DC current gain IO=-10mA; VO=-5.0V 80 − − R1 Input resistor 3.29 4.7 6.11 KΩ R2/R1 fT Resistor ratio Transition frequency 8 − 10 250 12 − MHz IC=-5mA, VCE=-10.0V f=100MHz = Note 1.Pulse test: tp≤300uS; δ≤0.02. CHDTC143Z CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V 0.5 − VI(on) Input on voltage IO=5mA; VO=0.3V − − 1.3 V VO(on) Output voltage IO=5mA; II=0.25mA − 0.1 0.3 V II Input current VI=5V − − 1.8 mA IO(off) Output current VI=0V; VCC=50V − − 0.5 uA hFE DC current gain IO=10mA; VO=5.0V 80 − − R1 Input resistor 3.29 4.7 6.11 KΩ R2/R1 fT Resistor ratio Transition frequency 8.0 − 10 250 12 − MHz Note 1.Pulse test: tp≤300uS; δ≤0.02. IE=-5mA, VCE=10.0V f=100MHz = − V RATING CHARACTERISTIC CURVES ( CHUMD22PT) CHDTA143Z Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m VO= 0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 2 Ta=100OC 25OC -40 OC 1 500m VCC= 5V 2m 1m Ta=100OC 25OC -40 OC 100u 10u 200m 100m 100u 10m 1m 1u 50m 100m 0 OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1 OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI O Ta = 100 C O 25 C -40 O C 50 20 10 5 2 1 100u 3.0 lO/lI=20 500m 500 100 2.0 Fig.4 Output voltage vs. output current 1k 200 1.0 INPUT VOLTAGE : VI(off) (V) 200m Ta=100OC 25OC -40 OC 100m 50m 20m 10m 5m 2m 1m 10m OUTPUT CURRENT : IO (A) 100m 1m 100u 1m 10m OUTPUT CURRENT : IO (A) 100m RATING CHARACTERISTIC CURVES ( CHUMD22PT) CHDTC143ZTypical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 VO= 0.3V INPUT VOLTAGE : VI(on) (V) 50 20 10 5 2 Ta=100OC 25OC -40 OC 1 500m 200m 100m 100u 1m 10m OUTPUT CURRENT : IO (A) 50m 100m