CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor DTr1:VOLTAGE 50 Volts DTr2:VOLTAGE 50 Volts CHEMD37PT CURRENT 70 mAmpere CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) * High current gain. * Suitable for high packing density. SOT-563 * Low colloector-emitter saturation. * High saturation current capability. (1) (5) 0.50 0.9~1.1 MARKING 1.5~1.7 0.50 * 37 0.15~0.3 (4) (3) 1.1~1.3 0.5~0.6 0.09~0.18 CIRCUIT 6 4 R1 DTr1 R2 1.5~1.7 R2 DTr2 R1 1 3 SOT-563 Dimensions in millimeters DTr1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − -50 V VIN Input voltage -40 +6 V − -70 − -100 − 150 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 140 O C/W RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. junction - soldering point 2005-10 DTr2 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +40 V − 50 − 100 − 150 mW IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 O C TJ Junction temperature − 150 O C Note Transistor mounted on an FR4 printed-circuit board. DTr1 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=-100uA; VCC=-5.0V -0.3 − − V VI(on) Input on voltage IO=-10mA; VO=-0.3V − − -2.5 V VO(on) Output voltage IO=-30mA; II=-1.5mA − − -0.3 V II Input current VI=-5.0V − − -0.70 mA IC(off) Output current VI=0V; VCC=-50V − − -0.5 uA hFE DC current gain IO=-5.0mA; VO=-5.0V 140 − − R1 Input resistor 7.0 10.0 13.0 KΩ R2/R1 fT Resistor ratio Transition frequency 3.7 − 4.7 250 5.7 − MHz IC=-5mA, VCE=-10.0V f=100MHz = Note 1.Pulse test: tp≤300uS; δ≤0.02. DTr2 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V 0.5 − − V VI(on) Input on voltage IO=10mA; VO=0.3V − − 3.0 V VO(on) Output voltage IO=10mA; II=0.5mA − 0.1 0.3 V II Input current VI=5V − − 0.88 mA IC(off) Output current VI=0V; VCC=50V − − 0.5 uA hFE DC current gain IO=5mA; VO=5.0V 30 − − R1 Input resistor 7.0 10.0 13.0 KΩ R2/R1 fT Resistor ratio Transition frequency 0.8 − 1.0 250 1.2 − MHz Note Pulse test: tp≤300uS; δ≤0.02. IE=-5mA, VCE=10.0V f=100MHz =