FPL11PT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT GLASS PASSIVATED FPL17PT FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere FEATURE *Sm al l S u r f ac e M o u n t i n g T y p e. (SMP) * Low leakage current * Fast recovery times for high efficiency * Glass passivated junction * High temperature soldering guaranteed : 260oC/10 seconds at terminals SMP 0.081 (2.05) 0.077 (1.95) 0.170 (4.31) 0.163 (4.15) (3) (1) (2) 0.019 (0.50 Min.) 0.077 (1.95) 0.073 (1.85) 0.045 (1.16) 0.042 (1.07) 0.005 (0.15 Min.) 0.019 (0.50 Min.) 0.264 (6.70) 0.254 (6.46) 2 CIRCUIT 0.212 (5.38) 0.208 (5.29) 1 0.055 (1.40) 0.051 (1.30) SMP Dimensions in inches and (millimeters) 3 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL FPL11PT FPL12PT FPL13PT FPL14PT FPL15PT FPL16PT FPL17PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Rectified Current TL = 110oC IO 1.0 Amps Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 30 Amps CJ 15 Typical Junction Capacitance (Note 1) pF (Note 2) R JL 30 o C/W (Note 3) R JA 75 o C/W Maximum Thermal Resistance Operating and Storage Temperature Range TJ, TSTG o -65 to +150 C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25oC Maximum Full Load Reverse Current Average, Full Cycle at TA = 55oC Maximum Reverse Recovery Time (Note 4) NOTES : 1. 2. 3. 4. SYMBOL FPL11PT FPL12PT FPL13PT FPL14PT FPL15PT FPL16PT FPL17PT VF 1.3 Volts 5.0 uAmps 100 uAmps UNITS IR trr Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts Thermal Resistance Junction to terminal 6.0 mm2 copper pads to each terminal Thermal Resistance Junction to ambient 6.0 mm2 copper pads to each terminal Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A 150 250 500 nSec 2004-7 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) D.U.T (+) 0 PULSE GENERATOR (NOTE 2) 25 Vdc (approx) (-) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A 1cm NOTES: 1. Rise Time = 7 ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10 ns max. Source Impedlance= 50 ohms. SET TIME BASE FOR 50/100 nS/cm FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 1.50 Single Phase Half Wave 60Hz Resistive or Inductive Load 1.25 1.00 .75 .50 .25 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE ( OC ) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, ( A ) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 10 100 10 4.0 TJ =100oC 1.0 .4 .1 .04 TJ =25oC Pulse Width = 300uS 1% Duty Cycle 1.0 0.1 TJ =25oC .01 0 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % ) 0 FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .2 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, ( V ) 1.8 FIG. 6 - TYPICAL JUNCTION CAPACITANCE 35 200 30 JUNCTION CAPACITANCE, ( pF ) PEAK FORWARD SURGE CURRENT, ( A ) AVERAGE FORWARD CURRENT, ( A ) RATING CHARACTERISTIC CURVES ( FPL11PT THRU FPL17PT ) 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5 0 100 60 40 20 10 TJ =25oC 6 4 2 1 1 2 5 10 20 NUMBER OF CYCLES AT 60 Hz 50 100 .1 .2 .4 1.0 2 4 10 REVERSE VOLTAGE, ( V ) 20 40 100