FFM301 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FFM307 SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.24 gram DO-214AB MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 0.125 (3.17) 0.115 (2.92) 0.245 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.008 (0.203) 0.004 (0.102) o Ratings at 25 C ambient temperature unless otherwise specified. 0.320 (8.13) 0.305 (7.75) Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at T A = 55o C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Thermal Resistance Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range SYMBOL FFM301 FFM302 FFM303 FFM304 FFM305 FFM306 FFM307 UNITS VRRM 50 100 200 400 600 800 1000 VRMS 35 70 140 280 420 560 700 Volts Volts VDC 50 100 200 400 600 800 1000 Volts IO 3.0 Amps I FSM 200 Amps (Note 2) Rθ JL (Note 3) Rθ JA 15 50 60 -65 to + 175 CJ T J , T STG 0 0 C/ W C/ W pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Forward Voltage at 3.0A DC Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC Maximum DC Reverse Current at @T A = 25 o C Rated DC Blocking Voltage @T A = 125 oC VF Maximum Reverse Recovery Time (Note 4) trr FFM301 FFM302 FFM303 FFM304 FFM305 FFM306 FFM307 UNITS 1.3 50 10 IR Volts uAmps uAmps 300 NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC 2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal. 3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal. 4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 150 250 500 uAmps nSec 2001-5 PEAK FORWARD SURGE CURRENT, (A) 5 4 3 2 Single Phase Half Wave 60Hz Resistive or Inductive Load 1 0 0 INSTANTANEOUS FORWARD CURRENT, (A) FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE 200 100 50 8.3ms Single Half Sine-Wave (JEDED Method) 30 20 10 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, ( ) 1 FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 3.0 1.0 0.3 5 10 50 NUMBER OF CYCLES AT 60Hz TJ = 25¢J Pulse Width=300uS 1% Duty Cycle 0.1 .03 .01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) 200 100 60 40 20 10 TJ = 25 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE (+) 25 Vdc (approx) (-) 10 NONINDUCTIVE trr +0.5A (-) D.U.T 0 PULSE GENERATOR (NOTE 2) 1 NONINDUCTIVE 100 FIG. 4 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) AVERAGE FORWARD CURRENT, (A) RATING AND CHARACTERISTIC CURVES ( FFM301 THRU FFM307 ) OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 1cm SET TIME BASE FOR 50/100 ns/cm RECTRON 100