FFM201 - FFM207

FFM201
RECTRON
THRU
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FFM207
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
FEATURES
*
*
*
*
*
*
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.098 gram
DO-214AA
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.083 (2.11)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.008 (0.203)
0.004 (0.102)
o
Ratings at 25 C ambient temperature unless otherwise specified.
0.220 (5.59)
0.205 (5.21)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T A = 55o C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Thermal Resistance
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
SYMBOL
FFM201 FFM202 FFM203 FFM204 FFM205 FFM206 FFM207 UNITS
VRRM
50
100
200
400
600
800
1000
VRMS
35
70
140
280
420
560
700
Volts
Volts
VDC
50
100
200
400
600
800
1000
Volts
IO
2.0
Amps
I FSM
70
Amps
(Note 2) Rθ JL
(Note 3) Rθ JA
20
60
50
-55 to + 150
CJ
T J , T STG
0
0
C/ W
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage at 2.0A DC
Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC
Maximum DC Reverse Current at
@T A = 25 o C
Rated DC Blocking Voltage
@T A = 125 oC
VF
Maximum Reverse Recovery Time (Note 4)
trr
FFM201 FFM202 FFM203 FFM204 FFM205 FFM206 FFM207 UNITS
1.3
50
5.0
IR
Volts
uAmps
uAmps
200
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.
4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
150
250
500
uAmps
nSec
2002-11
RATING AND CHARACTERISTIC CURVES ( FFM201 THRU FFM207 )
PEAK FORWARD SURGE CURRENT, (A)
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
2.5
2.0
1.5
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
.5
0
0
25
50
75
100 125 150 175
105
90
75
8.3ms Single Half Sine-Wave
(JEDEC Method)
60
45
30
15
0
1
2
200
20
10
3.0
0.3
100
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1.0
5
10
20
50
NUMBER OF CYCLES AT 60Hz
)
JUNCTION CAPACITANCE, (pF)
INSTANTANEOUS FORWARD CURRENT, (A)
AMBIENT TEMPERATURE, (
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
TJ = 25
Pulse Width=300uS
1% Duty Cycle
0.1
.03
.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
100
60
40
20
10
TJ = 25
6
4
2
1
.1
.2
.4
1.0 2
4
10
20
REVERSE VOLTAGE, ( V )
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
(+)
25 Vdc
(approx)
(-)
10
NONINDUCTIVE
trr
+0.5A
(-)
D.U.T
0
PULSE
GENERATOR
(NOTE 2)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-0.25A
(+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
1cm
SET TIME BASE FOR
50/100 ns/cm
RECTRON
40
100
Mounting Pad Layout
0.106 MAX.
(2.69 MAX.)
0.083 MIN.
(2.10 MIN.)
0.050 MIN.
(1.27 MIN.)
0.220 REF
Dimensions in inches and (millimeters)
RECTRON