Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 BAT86 SMALL SIGNAL SCHOTTKY DIODES Features · · For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage,such as electrostatic discharges. These diode is also available in the Mini-MELF case with type designation LL86 Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching · · make it ideal for protection of MOS devices,and low logic applications. MECHANICAL DATA · · · Case: Do-35 glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols Repetitive Peak Reverse Voltage Value VR Units 50 Forward Continuous Current at T =25 C IF 2001) Repetitive Peak Forward Current at t<1s,ä< 0.5,TA=250C I FRM 3001) 0 V Ptot 2001) Junction temperature TJ 125 0 Ambient Operating temperature Range TA -55~+125 0 Storage Temperature Range TSTG -55~+150 0 Power Dissipation 0 at TA=65 C mA mA mW C Dimensions in inches and (millimeters) C C 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS Reverse breakdown voltage Tested with 10 µ A pulses Forward voltage Pulse Test tp 300µs,δ 2% at IF=0.1mA, at IF=1mA, at IF=10mA, at IF=30mA, at IF=100mA Leakage current VR=25V Junction Capacitance at VR=1V ,f=1MHz Reverse recovery time Form IF=10mA,IR=10mA,IR =1mA Thermal resistance junction to ambient Air V(BR)R V 50 VF VF VF VF VF IR CJ trr 0.200 0.272 0.365 0.460 0.700 0.2 RθJA 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35) www.cnelectr.com 0.300 0.380 0.450 0.600 0.900 V V V V V 0.5 µA 8 pF ns 5 300 K/W