CHENYI BAT86

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
BAT86
SMALL SIGNAL
SCHOTTKY
DIODES
Features
·
·
For general purpose applications
These diodes features very low turn-on voltage and fast switching.
These devices are protected by a PN junction guard ring against
excessive voltage,such as electrostatic discharges.
These diode is also available in the Mini-MELF case with type
designation LL86
Metal-on-silicon Schottky barrier device which is protected by a PN
junction guard ring. The low forward voltage drop and fast switching
·
·
make it ideal for protection of MOS devices,and low logic applications.
MECHANICAL DATA
·
·
·
Case: Do-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Repetitive Peak Reverse Voltage
Value
VR
Units
50
Forward Continuous Current at T =25 C
IF
2001)
Repetitive Peak Forward Current at t<1s,ä< 0.5,TA=250C
I FRM
3001)
0
V
Ptot
2001)
Junction temperature
TJ
125
0
Ambient Operating temperature Range
TA
-55~+125
0
Storage Temperature Range
TSTG
-55~+150
0
Power Dissipation
0
at TA=65 C
mA
mA
mW
C
Dimensions in inches and (millimeters)
C
C
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Reverse breakdown voltage Tested with 10 µ A pulses
Forward voltage
Pulse Test tp 300µs,δ 2%
at IF=0.1mA,
at IF=1mA,
at IF=10mA,
at IF=30mA,
at IF=100mA
Leakage current VR=25V
Junction Capacitance at VR=1V ,f=1MHz
Reverse recovery time Form IF=10mA,IR=10mA,IR =1mA
Thermal resistance junction to ambient Air
V(BR)R
V
50
VF
VF
VF
VF
VF
IR
CJ
trr
0.200
0.272
0.365
0.460
0.700
0.2
RθJA
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
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0.300
0.380
0.450
0.600
0.900
V
V
V
V
V
0.5
µA
8
pF
ns
5
300
K/W