BAT42W,BAT43W FEATURES SMALL SIGNAL CHOTTKY DIODES SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R SOD-123 For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN JF junction guard ring against excessive ( voltage, such as electrostatic discharges. ( These diodes are also available in the Mini-MELF case with type designation LL42 to LL43 and in the DO-35 case with the type designation BAT42 to BAT43,in the Micro-MELF case with type designation MCL42 to MCL43 MECHANICAL DATA Case: SOD-123 plastic case Weight: Approx. 0.01 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols Repetitive Peak Reverse Voltage VRRM IF IFRM IFSM Ptot TJ TA TSTG Forward Continuous Current at TA=25 C Repetitive Peak Forward Current at tp Surge forward current at tp 1s, d 0.5, TA=25 C 10mS , TA=25 C Power Dissipation 1) at TA=65 C Junction temperature Ambient Operating temperature Range Storage Temperature Range Units V mA mA A mW 30 200 1) 500 4 1) 1) 200 1) 125 C -55 to+125 -55 to+150 C C 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS Symbols Reverse breakdown voltage Tested with 100mA Pulses Forward voltage Pulse Test tp at IF=200mA, atIF=10mA, atIF=50mA, at IF=2mA , atIF=15mA, 300ms,d 2% Leakage current pulse test tp 300ms ,d 2% at VR=25V, at VR=50V, TJ=100 C BAT42W BAT42W BAT43W BAT43W Junction Capacitance at VR=25V ,f=1MHz Reverse Recovery time Form IF=10mA,through IR=1mA RL=100W Detection efficiency at RL=15KW CL=300pF,f=45MHz, VR=2V Thermal resistance junction to ambient 1) Valid provided that electrodes are kept at ambient temperature Min. V(BR)R Typ. Max. VF VF VF VF VF IR IR Ctot trr 0.26 1 0.4 0.65 0.33 0.45 V V V V V 0.5 100 mA mA pF 7 5 80 300 1) RqJA Unis V 30 ns % K/W 2-22 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM