VLMPG/YG30.. Vishay Semiconductors Low current SMD LED PLCC-2 19225 DESCRIPTION This device has been designed to meet the increasing demand for InGaN technology. The package of the VLMPG/YG30.. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. PRODUCT GROUP AND PACKAGE DATA • Product group: SMD LED • Product series: Low current LED • Package: PLCC-2 • Angle of half intensity: ± 60° Document Number 81648 Rev. 1.0, 23-Aug-07 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020B • Available in 8 mm tape • Low profile package • Non-diffused lens: excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 1.6 • Lead (Pb)-free device • Preconditioning: acc. to JEDEC Level 2a • ESD-withstand voltage: > 2 kV acc. to MIL STD 883 D, Method 3015.7 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Automotive qualified AEC-Q101 APPLICATIONS • Automotive: Backlighting in dashboards and switches • Telecommunication: Indicator and backlighting in telephone and fax • Indicator and backlight for audio and video equipment • Indicator and backlight in office equipment • Flat backlight for LCDs, switches and symbols • General use www.vishay.com 1 VLMPG/YG30.. Vishay Semiconductors PARTS TABLE COLOR, LUMINOUS INTENSITY TECHNOLOGY VLMPG30E1F2-GS08 PART Pure green, IV = (0.71 to 1.80) mcd AlInGaP/GaAS VLMPG30E1F2-GS18 Pure green, IV = (0.71 to 1.80) mcd AlInGaP/GaAS VLMPG30F1G2-GS08 Pure green, IV = (1.12 to 2.80) mcd AlInGaP/GaAS VLMPG30F1G2-GS18 Pure green, IV = (1.12 to 2.80) mcd AlInGaP/GaAS VLMPG30E1G2-GS08 Pure green, IV = (0.71 to 2.80) mcd AlInGaP/GaAS VLMPG30E1G2-GS18 Pure green, IV = (0.71 to 2.80) mcd AlInGaP/GaAS VLMYG30G2J1-GS08 Yellow green, IV = (2.24 to 5.60) mcd AlInGaP/GaAS VLMYG30G2J1-GS18 Yellow green, IV = (2.24 to 5.60) mcd AlInGaP/GaAS VLMYG30H2K1-GS08 Yellow green, IV = (3.55 to 9.00) mcd AlInGaP/GaAS VLMYG30H2K1-GS18 Yellow green, IV = (3.55 to 9.00) mcd AlInGaP/GaAS VLMYG30G2K1-GS08 Yellow green, IV = (2.24 to 9.00) mcd AlInGaP/GaAS VLMYG30G2K1-GS18 Yellow green, IV = (2.24 to 9.00) mcd AlInGaP/GaAS ABSOLUTE MAXIMUM RATINGS1) VLMPG30.., VLMYG30.. PARAMETER Reverse voltage TEST CONDITION SYMBOL 2) DC Forward current Surge forward current VALUE UNIT VR 5 V Tamb ≤ 80 °C IF 20 mA tp ≤ 10 µs IFSM 0.2 A Power dissipation PV 60 mW Junction temperature Tj 125 °C Tamb - 40 to + 100 °C Tstg - 40 to + 100 °C RthJA 400 K/W Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) Note: 1) Tamb = 25 °C, unless otherwise specified 2) Driving LED in reverse direction is suitable for short term application OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMPG30.., PURE GREEN TEST CONDITION SYMBOL MIN Luminous intensity2) PARAMETER IF = 2 mA IV 0.71 TYP Dominant wavelength IF = 2 mA λd 555 Peak wavelength IF = 2 mA λp 565 Angle of half intensity IF = 2 mA ϕ ± 60 Forward voltage IF = 2 mA VF Reverse voltage IR = 10 µA VR Temperature coefficient of VF IF = 20 mA TCV -4 mV/K Temperature coefficient of IV IF = 20 mA TCI - 0.4 %/K 560 MAX UNIT 2.8 mcd 565 nm nm deg 2.2 5 V V Note: 1) T amb = 25 °C, unless otherwise specified 2) In one Packing Unit IVmax/IVmin ≤ 1.6 www.vishay.com 2 Document Number 81648 Rev. 1.0, 23-Aug-07 VLMPG/YG30.. Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMYG30.., YELLOW GREEN TEST CONDITION SYMBOL MIN Luminous intensity2) PARAMETER IF = 2 mA IV 2.24 TYP Dominant wavelength IF = 2 mA λd 566 Peak wavelength IF = 2 mA λp 576 nm Angle of half intensity IF = 2 mA ϕ ± 60 deg Forward voltage IF = 2 mA VF 574 MAX UNIT 9.0 mcd 575 nm 2.2 V Reverse voltage IR = 10 µA VR Temperature coefficient of VF IF = 20 mA TCV -4 mV/K Temperature coefficient of IV IF = 20 mA TCI - 0.2 %/K 5 V Note: 1) Tamb = 25 °C, unless otherwise specified 2) In one Packing Unit I Vmax/IVmin ≤ 1.6 LUMINOUS INTENSITY CLASSIFICATION GROUP STANDARD E F G H J K COLOR CLASSIFICATION LIGHT INTENSITY (MCD) PURE GREEN OPTIONAL MIN MAX 1 0.71 0.90 MIN. MAX. 2 0.90 1.12 0 555 559 1 1.12 1.40 1 558 561 2 1.40 1.80 2 560 563 1 1.80 2.24 3 562 565 2 2.24 2.80 1 2.80 3.55 2 3.55 4.50 1 4.50 5.60 2 5.60 7.10 1 7.10 9.00 Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable. Document Number 81648 Rev. 1.0, 23-Aug-07 GROUP DOM. WAVELENGTH (NM) Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm. COLOR CLASSIFICATION YELLOW-GREEN GROUP DOM. WAVELENGTH (NM) MIN. MAX. 5 566 569 6 568 571 7 570 573 8 572 575 Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm. www.vishay.com 3 VLMPG/YG30.. Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified IV rel - Relative Luminous Intensity IF - Forward Current (mA) 30 20 10 0 20 40 60 80 100 0.4 0.2 20 15 10 5 2.05 2.1 2.15 2.2 VF - Forward Voltage (V) 20821 0° 10° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 www.vishay.com 4 610 30 mA 400 20 mA 300 200 100 10 mA 0 - 100 - 200 - 300 - 50 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) Figure 5. Change of Forward Voltage vs. Ambient Temperature 3.0 pure green 2.5 2.0 1.5 1.0 0.5 0.0 - 50 18616 Figure 3. Rel. Luminous Intensity vs. Angular Displacement 590 500 20° 30° 570 600 20667 Figure 2. Forward Current vs. Forward Voltage 550 - Wavelength (nm) Figure 4. Relative Luminous Intensity vs. Wavelength Δ VF - Change of Forward Voltage (mV) 25 0 1.8 1.85 1.9 1.95 2 530 18648 IV rel - Relative Luminous Intensity IF - Forward Current (mA) 0.6 510 Tamb - Ambient Temperature (°C) 30 IV rel - Relative Luminous Intensity 0.8 120 Figure 1. Forward Current vs. Ambient Temperature 95 10319 pure green 1.0 0.0 0 20831 1.2 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) Figure 6. Rel. Luminous Intensity vs. Ambient Temperature Document Number 81648 Rev. 1.0, 23-Aug-07 VLMPG/YG30.. Vishay Semiconductors 1.2 IV rel - Relative Luminous Intensity IV rel - Relative Luminous Intensity 100 10 1 yellow green 1.0 0.8 0.6 0.4 0.2 0.0 520 0 1 10 100 IF - Forward Current (mA) 20822 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 IF - Forward Current (mA) 20823 0.3 0.2 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 60 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 11. Change of Forward Voltage vs. Ambient Temperature IV rel - Relative Luminous Intensity Δ λ d - Change of Dom. Wavelength (nm) 620 3.5 pure green 6 4 2 0 -2 -4 -6 18617 600 0.4 8 -8 - 50 580 0.5 20687 Figure 8. Change of Dominant Wavelength vs. Forward Current 560 Figure 10. Rel. Luminous Intensity vs. Wavelength VF - Change of Forward Voltage (mV) Δλd - Change of Dom. Wavelength (nm) Figure 7. Rel. Luminous Intensity vs. Forward Current 540 - Wavelength (nm) 18647 - 25 0 25 50 75 Figure 9. Change of Dominant Wavelength vs. Ambient Temperature Document Number 81648 Rev. 1.0, 23-Aug-07 2.5 2.0 1.5 1.0 0.5 0 - 60 - 40 - 20 0 100 Tamb - Ambient Temperature (°C) 3.0 20824 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Figure 12. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 5 VLMPG/YG30.. Δλd - Change of Dom. Wavelength (nm) Vishay Semiconductors IV rel - Relative Luminous Intensity 10 yellow green 1 0.1 0.01 1 18646 10 100 10 8 6 4 2 0 -2 -4 -6 -8 - 60 - 40 - 20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) 20825 IF - Forward Current (mA) Figure 13. Relative Luminous Intensity vs. Forward Current Δλd- Change of Dom. Wavelength (nm) 12 Figure 15. Change of Dominant Wavelength vs. Ambient Temperature 3 yellow green 2 1 0 -1 -2 -3 18649 10 20 30 40 50 60 70 80 90 100 IF - Forward Current (mA) Figure 14. Change of Dominant Wavelength vs. Forward Current PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 1.2 4 2.6 (2.8) area covered with solder resist 4 1.6 (1.9) 20541 www.vishay.com 6 Document Number 81648 Rev. 1.0, 23-Aug-07 VLMPG/YG30.. Vishay Semiconductors METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM3 - SERIES) Vishay’s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.) 10.0 9.0 120° 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 Adhesive Tape Identification Label: Vishay Type Group Tape Code Production Code Quantity Blister Tape 14.4 max. 180 178 94 8665 Figure 17. Reel dimensions - GS08 Component Cavity 94 8670 REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERED TAPING OF VLM.3.. 3.5 3.1 2.2 2.0 5.75 5.25 3.6 3.4 10.4 8.4 120° 4.5 3.5 4.0 3.6 2.5 1.5 8.3 7.7 13.00 12.75 62.5 60.0 Identification 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 0.25 2.05 1.95 94 8668 Label: Vishay Type Group Tape Code Production Code Quantity 321 329 14.4 max. 18857 Figure 16. Tape dimensions in mm for PLCC-2 Figure 18. Reel dimensions - GS18 Document Number 81648 Rev. 1.0, 23-Aug-07 www.vishay.com 7 VLMPG/YG30.. Vishay Semiconductors SOLDERING PROFILE BARCODE-PRODUCT-LABEL EXAMPLE: IR Reflow Soldering Profile for lead (Pb)-free soldering Preconditioning acc. to JEDEC Level 2a 300 106 250 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C A H VISHAY 200 max. 30 s 37 150 max. 100 s max. 120 s 100 B max. ramp down 6 °C/s max. ramp up 3 °C/s 50 C D E F G 19988 0 0 50 100 150 Time (s) 200 250 300 max. 2 cycles allowed 19885 Figure 19. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B) TTW Soldering 300 948626-1 (acc. to CECC00802) 5s Lead Temperature Temperature (°C) 250 200 second wave 235 °C...260 °C first wave full line: typical dotted line: process limits ca. 2 K/s ca. 200 K/s 150 A) Type of component B) Manufacturing plant C) SEL - selection code (bin): e.g.: L2 = code for luminous intensity group 0 = code for color group D) Date code year/week E) Day code (e.g. 1: Monday) F) Batch no. G) Total quantity H) Company code 100 °C...130 °C 100 ca. 5 K/s 2 K/s 50 forced cooling 0 0 50 100 150 200 250 Time (s) Figure 20. Double Wave Soldering of Opto Devices (all packages) www.vishay.com 8 Document Number 81648 Rev. 1.0, 23-Aug-07 VLMPG/YG30.. Vishay Semiconductors DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. L E V E L CAUTION This bag contains MOISTURE –SENSITIVE DEVICES 2a 1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260°C) must be: a) Mounted within 672 hours at factory condition of < 30°C/60%RH or b) Stored at <10% RH. 3. Devices require baking before mounting if: a) Humidity Indicator Card is >10% when read at 23°C + 5°C or b) 2a or 2b is not met. Aluminum bag Label 4. If baking is required, devices may be baked for: 192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen) or o 96 hours at 60±5 Cand <5%RH or For all device containers 24 hours at 100±5°C Not suitable for reels or tubes Bag Seal Date: ______________________________ (If blank, see bar code label) Note: LEVEL defined by EIA JEDEC Standard JESD22-A113 19786 Reel Example of JESD22-A112 level 2a label 15973 FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/nitrogen) or 96 h at 60 °C + 5 °C and < 5 % RH for all device containers or 24 h at 100 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 level 2a label is included on all dry bags. Document Number 81648 Rev. 1.0, 23-Aug-07 ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR-CODE LABELS The Vishay Semiconductors standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data. www.vishay.com 9 VLMPG/YG30.. Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 10 Document Number 81648 Rev. 1.0, 23-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1