CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1N4150 THRU 1N4448 HIGH SPEED SWITCHING DIODES VOLTAGE：50-100V CURRENT：0.15 to 0.2 A FEATURES DO-35 ·Silicon epitaxial planar diodes ·Low power loss, high efficiency ·Low lekage ·Low forward voltagh ·High speed switching ·High current capability ·High reliability 25.0MIN. L 25.0MIN. MECHANICAL DATA ·Case:Glass sealed case ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity: Color band denotes cathode end ·Mounting position: Any ·Weight: 0.13 gram 0.52 2.0MAX. DO-35 L: DO-34 2.9 4.2 MAX. MAX. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1N4150 1N4151 1N4448 units VRRM Ptot 50 500 75 500 100 500 V mW Maximum Forward Voltage VF 1.0/200 1.0/50 1.0/100 V/mA Maximum reverse current IR 100/50 50/50 5000/75 nA/V Maximum reverse recovery time trr 4.0 2.0 4.0 nS Maximum junction capacitance CJ Maximum Recurrent Peak Reverse Voltage Maximum power dissipation tamb=25°C Notes: 1-1N914A,1N914B is same as 1N914, except different forward voltage|: 1N914A-1.0/20 V/mA 1N914B-1.0/100 V/mA 2.Suffix “M” stands for “DO-34” package. (e.g.:1N4148M) １ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn 4.0 pF