1N914, 1N914A, 1N914B FAST SWITCHING DIODES Max. 0.5 Features • Fast Switching Speed • High Reliability Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V 75 V 53 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage VRRM VRWM VR VR(RMS) 1N914 1N914A / B 1N914 Forward Continuous Current 1) 1N914A / B Non-Repetitive Peak Forward Surge Current at t = 1 s 1N914 at t = 1 µs 1N914A / B at t = 1 µs 1) Power Dissipation Ptot 75 200 150 300 1 1 4 500 mW Thermal Resistance, Junction to Ambient Air 1) RθJA 300 K/W Operating and Storage Temperature Range Tj ,TS - 65 to + 175 Average Rectified Output Current 1) IO IFM IFSM mA mA A C O Characteristics at Ta = 25 OC Parameter Symbol Min. Forward Voltage at IF = 5 mA 1N914B 0.62 at IF = 100 mA 1N914B VF at IF = 10 mA 1N914 at IF = 20 mA 1N914A Reverse Current at VR = 20 V IR at VR = 75 V at VR = 20 V, Tj = 150 OC Diode Capacitance Cj at VR = 0, f = 1 MHz Reverse Recovery Time trr at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω 1) Valid provided that lead are kept at ambient temperature at a distance of 8 mm. Max. Unit 0.72 1 1 1 25 5 50 nA µA µA 4 pF 4 ns SEMTECH ELECTRONICS LTD. ® V (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 13/06/2007