COMCHIP CDBF0230-HF

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBF0230-HF
(RoHS Device)
Io = 200 mA
V R = 30 Volts
Features
1005(2512)
Halogen free.
0.102(2.60)
0.095(2.40)
Designed for mounting on small surface.
Extremely thin/leadless package.
0.051(1.30)
0.043(1.10)
Low drop-down voltage.
Majority carrier conduction.
Mechanical data
0.035(0.90)
0.027(0.70)
Case: 1005(2512) standard package,
molded plastic.
0.020(0.50) Typ.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.012 (0.30) Typ.
Marking code: cathode band & B5
0.040(1.00) Typ.
Mounting position: Any
Weight: 0.006 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Repetitive peak reverse voltage
Symbol Min Typ Max Unit
V RRM
35
V
Reverse voltage
VR
30
V
Average forward current
IO
200
mA
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power Dissipation
I FSM
3000
PD
Sunction temperature
T STG
Junction temperature
Tj
mA
150
-40
mW
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 200 mA DC
VF
0.50
V
Reverse current
V R = 30V
IR
30
uA
Capacitance between terimnals
F = 1 MHZ and 10 VDC reverse voltage
CT
9
pF
REV:A
Page 1
QW-G1066
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBF0230-HF)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
10m
1000
1m
Reverse current ( A )
O
10
C
O
C
O
25
-25
C
75
O
5
0.1
O
C
1
12
Forward current (mA )
100
0.01
O
75 C
10u
1u
O
25 C
100n
10n
O
-25 C
1n
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
100
Mounting on glass epoxy PCBs
f = 1 MHz
Ta = 25 C
Average forward current(%)
Capacitance between terminals ( P F)
125 C
100u
10
100
80
60
40
20
0
1
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
O
Reverse voltage (V)
Ambient temperature ( C)
REV:A
Page 2
QW-G1066
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
F/1005
F/1005
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.55 ± 0.10
2.65 ± 0.10
1.05 ± 0.10
1.55 ± 0.05
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.061 ± 0.004
0.104 ± 0.004
0.041 ± 0.004
0.061 ± 0.002
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:A
Page 3
QW-G1066
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Park Number
Marking Code
CDBF0230-HF
B5
B5
Suggested PAD Layout
F/1005
SIZE
A
(mm)
(inch)
2.10
0.083
D
A
B
1.20
0.047
C
1.20
0.047
E
C
D
3.30
0.130
E
0.90
0.035
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
4000
7
Case Type
F/1005
REV:A
Page 4
QW-G1066
Comchip Technology CO., LTD.