CDBF0540 - Comchip Technology

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBF0540 (RoHS Device)
I O = 500 mA
V R = 40 Volts
1005(2512)
Features
0.102(2.60)
0.095(2.40)
Low forward voltage.
Designed for mounting on small surface.
0.051(1.30)
0.043(1.10)
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
0.035(0.90)
Case: 1005(2512) standard package,
molded plastic.
0.027(0.70)
0.020(0.50) Typ.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.012 (0.30) Typ.
Marking code: cathode band & BN
Mounting position: Any
0.040(1.00) Typ.
Weight: 0.006 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Peak reverse voltage
Symbol Min Typ Max Unit
V RM
40
V
Reverse voltage
VR
40
V
Average forward rectified current
IO
500
mA
I FSM
5.5
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Storage temperature
T STG
Junction temperature
Tj
-40
A
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
Conditions
Symbol Min Typ Max Unit
O
I F = 0.5 A
IF = 1 A
I F = 0.5 A
IF = 1 A
@Ta = 25 C
@Ta = 25 C
@Ta = 100 C
@Ta = 100 C
V R = 20V
V R = 40V
V R = 20V
V R = 40V
@Ta = 25 OC
@Ta = 25 CO
@Ta = 100 OC
@Ta = 100 C
VF
0.51
0.64
0.46
0.62
V
IR
0.01
0.02
2
5
mA
170
pF
O
O
O
O
Capacitance between terminals
f = 1 MHz, and 0 VDC reverse voltage
CT
Reverse recovery time
I F = I R = 10mA, Irr x I R , R L = 100ohm
Trr
22
ns
REV:B
Page 1
QW-A1040
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBF0540)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
10m
1000
125 C
100
Reverse current ( A )
Forward current (mA )
1m
10
1
0.1
75 C
100u
10u
25 C
1u
100n
-25 C
10n
0
0
0.1
0.2
0.3
0.4
0.5
0.6
1n
0.7
0
10
Forward voltage (V)
Average forward current ( % )
Capacitance between terminals(pF)
100
80
60
40
20
0
5
10
15
Fig. 4 - Current derating curve
120
f=1MHz
Ta = 25 C
0
40
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
120
30
20
20
100
80
60
40
20
0
0
Reverse voltage (V)
25
50
75
100
125
150
Ambient temperature ( C )
REV:B
Page 2
QW-A1040
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
F/1005
F/1005
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.55 ± 0.10
2.65 ± 0.10
1.05 ± 0.10
1.55 ± 0.05
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.061 ± 0.004
0.104 ± 0.004
0.041 ± 0.004
0.061 ± 0.002
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:B
Page 3
QW-A1040
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Part Number
Marking Code
CDBF0540
BN
BN
Suggested PAD Layout
F/1005
SIZE
A
(mm)
(inch)
2.10
0.083
D
A
B
1.20
0.047
C
1.20
0.047
E
C
D
3.30
0.130
E
0.90
0.035
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
4000
7
Case Type
F/1005
REV:B
Page 4
QW-A1040
Comchip Technology CO., LTD.