COMCHIP CDBQR0140L-HF

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBQR0140L-HF (RoHS Device)
Io = 100 mA
V R = 40 Volts
0402(1005)
Features
0.041(1.05)
0.037(0.95)
Halogen free.
Low forward voltage.
0.026(0.65)
0.022(0.55)
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
0.022(0.55)
0.018(0.45)
Case: 0402(1005) standard package,
molded plastic.
0.012(0.30) Typ.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking Code: Cathode band & B8
0.020(0.50) Typ.
Mounting position: Any.
Dimensions in inches and (millimeter)
Weight: 0.001 gram(approx.).
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive Peak reverse voltage
Reverse voltage
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Power Dissipation
V RRM
45
V
VR
40
V
IO
100
mA
I FSM
1
A
PD
125
mW
Storage temperature
T STG
Junction temperature
Tj
-40
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 100mA
I F = 10mA
VF
0.55
0.34
V
Reverse current
V R = 10V
IR
30
uA
Capacitance between terminals
f = 1 MHz, and 10 VDC reverse voltage
CT
6
pF
REV:B
Page 1
QW-G1105
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBQR0140L-HF)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
10m
1000
Reverse current ( A )
C
O
C
O
-25
25
O
75
5
O
C
10
C
100
12
Forward current (mA )
1m
O
75 C
100u
10u
O
25 C
1u
100n
O
-25 C
10n
1
1n
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
40
Reverse voltage (V)
Forward voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
15
Average forward current(%)
Capacitance between terminals ( P F)
30
20
12
9
6
3
100
80
60
40
20
0
0
0
10
20
30
40
0
25
50
75
100
125
150
O
Reverse voltage (V)
Ambient temperature ( C)
REV:B
Page 2
QW-G1105
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
QR/0402
QR/0402
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.75 ± 0.10
1.15 ± 0.10
0.60 ± 0.10
1.55 ± 0.10
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.026 ± 0.004
0.045 ± 0.004
0.024 ± 0.004
0.061 ± 0.004
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.22 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:B
Page 3
QW-G1105
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Part Number
Marking Code
CDBQR0140L-HF
B8
B8
Suggested PAD Layout
QR/0402
SIZE
(mm)
(inch)
A
0.750
0.030
B
0.500
0.020
C
0.700
0.028
D
1.250
0.049
E
0.250
0.010
D
A
E
C
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
5000
7
Case Type
QR/0402
REV:B
Page 4
QW-G1105
Comchip Technology CO., LTD.