COMCHIP SMD Gen er al Purpose Rect ifier s SMD Diodes Specialist CGRA4001-G Thru. CGRA4007-G Glass Passivated Type Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 Amp RoHS Device DO-214AC (SMA) Features -Ideal for surface mount applications. -Easy pick and place. -Plastic package has Underwriters Lab. flammability classification 94V-0. -Built in strain relief. -High surge current capability. - Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. 0.180(4.57) 0.160(4.06) 0.110(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) 0.209(5.31) 0.185(4.70) 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) Mechanical data 0.008(0.20) 0.004(0.10) 0.059(1.50) 0.035(0.89) -Case: JEDEC DO-214AC, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: Color band denotes cathode end. -Approx. weight: 0.063 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Parameter Symbol CGRA CGRA 4001-G 4002-G CGRA CGRA 4003-G 4004-G CGRA CGRA 4005-G 4006-G CGRA Units 4007-G Max. repetitive peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage V DC 50 100 200 400 600 800 1000 V Max. RMS voltage V RMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 30 A Max. average forward current IO 1.0 A Max. instantaneous forward voltage at 1.0A VF 1.1 V Max. DC reverse current at T A =25 OC rated DC blocking voltage T A =100 OC IR 5.0 50 μA Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature RθJA 85 75 O C/W TJ 150 O C T STG -55 to +150 O C Notes: 1. Thermal resistance from junction to terminals, unit mounted on P.C.B. with 5.0×5.0mm 2 copper pads. REV:B Page 1 QW-BG002 Comchip Technology CO., LTD. COMCHIP SMD Gen er al Purpose Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CGRA4001-G thru CGRA4007-G) Fig.2 Forward Characteristics 100 100 10 10 F o r w a rd C u rren t (A) Rever s e C urr e n t (μA ) Fig.1 Reverse Characteristics T J =100 OC 1 0.1 1 0.1 O T J =25 C Pulse width 300μS 4% duty cycle O T J =25 C 0.01 0 40 80 120 160 0.01 0.1 200 0.5 Fig.3 Junction Capacitance 1.7 1.3 2.1 Fig.4 Current Derating Curve 35 25 20 15 10 5 0 0.01 Averaged F orward Current (A) 1.4 T J =25 OC f=1MHz and applied 4VDC reverse voltage 30 J u n c ti o n C apaci t ance (p F ) 0.9 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Single phase, half wave 60Hz, resistive or inductive load 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1 10 100 0 25 50 75 100 125 150 175 Ambient Temperature ( OC) Reverse Voltage (V) Fig.5 Non-repetitive Forward Surge Current P e a k F o r w a r d S u r g e Cur r e n t (A ) 50 T J =25 OC 8.3ms single half sine wave, JEDEC method 40 30 20 10 0 1 10 100 Number of Cycles at 60Hz REV:B Page 2 QW-BG002 Comchip Technology CO., LTD.