SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U-HF RoHS Device Features Halogen free. SOT-383F(VR8) IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air). 0.086(2.20) 0.079(2.00) Working voltage: 3.3V Low leakage current. Low operating and clamping voltages. 0.067(1.70) 0.059(1.50) Mechanical data Case: SOT-383F standard package,molded plastic. Terminals: Gold plated/Nipd, solderable per MIL-STD-750,method 2026. Mounting position: Any 0.059(1.50)Typ. Circuit Diagram 1 8 2 7 3 6 4 5 0.008(0.20) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. GND Package 0.014(0.35) Typ. Dimensions in inches and (millimeters) 8 7 6 5 GND 1 2 3 4 REV:A Page 1 QW-G7016 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Maximum Rating (at T A =25 C unless otherwise noted) O Symbol Value Unit Peak pulse power ( tp = 8/20 us) P PP 40 W Peak pulse current ( tp = 8/20 us) I PP 5 A ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) V ESD ±20 ±15 kV Tj -55 to +125 O -55 to +125 O Parameter Operating temperature Storage temperature T STG C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Reverse stand-off voltage Symbol Min Typ Max Unit 3.3 V RWM V Punch-through voltage I PT = 2uA V PT 3.5 V Snap-back voltage I SB = 50mA V SB 2.8 V Reverse leakage current V RWM = 3.3V IR I PP = 1 A, tp=8/20us, Any Channel Pin to Ground 0.5 uA VC 5.5 V I PP = 5 A, tp=8/20us, Any Channel Pin to Ground VC 8.0 V I PPR = 1 A, tp=8/20us, Ground to Any Channel Pin V CR 2.4 V V R = 0 V, f = 1MHz Any Channel Pin to Ground Cj 25 30 pF V R = 3.3 V, f = 1MHz Any Channel Pin to Ground Cj 14 0.05 Clamping voltage Reverse clamping voltage Junction capacitance pF REV:A Page 2 QW-G7016 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CPDVR083V3U-HF) Fig. 2 - Power rating derating curve 1 110 100 90 80 Power rating (%) Max. peak pulse power-P PP (kW ) Fig. 1 - Non-repetitive max. peak pulse power vs. pulse time 0.1 70 60 50 40 30 20 10 0.01 0 0.1 1 100 10 0 1000 25 50 75 100 Pulse duration-tp(us) Ambient temperature ( C ) Fig.3 - Clamping voltage vs. peak pulse current Fig.4 - Forward voltage vs. Forward current 16 150 12 Waveform Parameters: tr=8us td=20us 14 10 12 Forward voltage (V) Clamping voltage (V) 125 O 10 8 Waveform Parameters: tr=8us td=20us 6 4 8 6 4 2 2 0 0 0 1 2 3 4 5 6 0 Peak pulse current(A) 1 2 3 4 5 6 Forward current(A) Fig.5 - Junction capacitance vs. reverse voltage Normalized capacitance - Cj (pF) 30 f = 1MHz 25 Line-to-Gnd 20 15 Line-to-Line 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 Reverse voltage (V) REV:A Page 3 QW-G7016 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOT-383F SOT-383F SYMBOL A B C d D D1 D2 (mm) 1.96 ± 0.10 2.31 ± 0.10 0.74 ± 0.10 1.55 + 0.10 178 ± 1 60.0 MIN. 13.0 ± 0.20 (inch) 0.077 ± 0.004 0.091 ± 0.004 0.029 ± 0.004 0.061 + 0.004 7.008 ± 0.04 2.362 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 0.22 ± 0.05 8.00 ± 0.20 13.5 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 0.531 MAX. REV:A Page 4 QW-G7016 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Marking Code Part Number Marking Code CPDVR083V3U-HF E3V3 E3V3 Suggested PAD Layout SOT-383F(VR8) SIZE (mm) (inch) A 0.630 0.025 B 0.300 0.012 B C D C 0.500 0.020 D 0.450 0.018 E 2.150 0.085 F 1.800 0.071 E A F Standard Package Qty per Reel Reel Size (Pcs) (inch) 3000 7 Case Type SOT-383F(VR8) REV:A Page 5 QW-G7016 Comchip Technology CO., LTD.