COMCHIP CPDVR083V3U-HF

SMD ESD Protection Diode
SMD Diodes Specialist
CPDVR083V3U-HF
RoHS Device
Features
Halogen free.
SOT-383F(VR8)
IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air).
0.086(2.20)
0.079(2.00)
Working voltage: 3.3V
Low leakage current.
Low operating and clamping voltages.
0.067(1.70)
0.059(1.50)
Mechanical data
Case: SOT-383F standard package,molded plastic.
Terminals: Gold plated/Nipd, solderable per
MIL-STD-750,method 2026.
Mounting position: Any
0.059(1.50)Typ.
Circuit Diagram
1
8
2
7
3
6
4
5
0.008(0.20) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
GND
Package
0.014(0.35) Typ.
Dimensions in inches and (millimeters)
8
7
6
5
GND
1
2
3
4
REV:A
Page 1
QW-G7016
Comchip Technology CO., LTD.
SMD ESD Protection Diode
SMD Diodes Specialist
Maximum Rating (at T A =25 C unless otherwise noted)
O
Symbol
Value
Unit
Peak pulse power ( tp = 8/20 us)
P PP
40
W
Peak pulse current ( tp = 8/20 us)
I PP
5
A
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
V ESD
±20
±15
kV
Tj
-55 to +125
O
-55 to +125
O
Parameter
Operating temperature
Storage temperature
T STG
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Reverse stand-off voltage
Symbol Min Typ Max Unit
3.3
V RWM
V
Punch-through voltage
I PT = 2uA
V PT
3.5
V
Snap-back voltage
I SB = 50mA
V SB
2.8
V
Reverse leakage current
V RWM = 3.3V
IR
I PP = 1 A, tp=8/20us,
Any Channel Pin to Ground
0.5
uA
VC
5.5
V
I PP = 5 A, tp=8/20us,
Any Channel Pin to Ground
VC
8.0
V
I PPR = 1 A, tp=8/20us,
Ground to Any Channel Pin
V CR
2.4
V
V R = 0 V, f = 1MHz
Any Channel Pin to Ground
Cj
25
30
pF
V R = 3.3 V, f = 1MHz
Any Channel Pin to Ground
Cj
14
0.05
Clamping voltage
Reverse clamping voltage
Junction capacitance
pF
REV:A
Page 2
QW-G7016
Comchip Technology CO., LTD.
SMD ESD Protection Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CPDVR083V3U-HF)
Fig. 2 - Power rating derating curve
1
110
100
90
80
Power rating (%)
Max. peak pulse power-P PP (kW )
Fig. 1 - Non-repetitive max. peak pulse power
vs. pulse time
0.1
70
60
50
40
30
20
10
0.01
0
0.1
1
100
10
0
1000
25
50
75
100
Pulse duration-tp(us)
Ambient temperature ( C )
Fig.3 - Clamping voltage vs.
peak pulse current
Fig.4 - Forward voltage vs.
Forward current
16
150
12
Waveform
Parameters:
tr=8us
td=20us
14
10
12
Forward voltage (V)
Clamping voltage (V)
125
O
10
8
Waveform
Parameters:
tr=8us
td=20us
6
4
8
6
4
2
2
0
0
0
1
2
3
4
5
6
0
Peak pulse current(A)
1
2
3
4
5
6
Forward current(A)
Fig.5 - Junction capacitance vs.
reverse voltage
Normalized capacitance - Cj (pF)
30
f = 1MHz
25
Line-to-Gnd
20
15
Line-to-Line
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
Reverse voltage (V)
REV:A
Page 3
QW-G7016
Comchip Technology CO., LTD.
SMD ESD Protection Diode
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOT-383F
SOT-383F
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.96 ± 0.10
2.31 ± 0.10
0.74 ± 0.10
1.55 + 0.10
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.077 ± 0.004
0.091 ± 0.004
0.029 ± 0.004
0.061 + 0.004
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.22 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:A
Page 4
QW-G7016
Comchip Technology CO., LTD.
SMD ESD Protection Diode
SMD Diodes Specialist
Marking Code
Part Number
Marking Code
CPDVR083V3U-HF
E3V3
E3V3
Suggested PAD Layout
SOT-383F(VR8)
SIZE
(mm)
(inch)
A
0.630
0.025
B
0.300
0.012
B
C
D
C
0.500
0.020
D
0.450
0.018
E
2.150
0.085
F
1.800
0.071
E
A
F
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
3000
7
Case Type
SOT-383F(VR8)
REV:A
Page 5
QW-G7016
Comchip Technology CO., LTD.