POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VCEX VEBO Ratings Collector-Base Voltage Collector-EmitterVoltage Collector-EmitterVoltage Emitter-Base Voltage IE=0 IB=0 VBE=-1.5 V IC=0 Value 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 Unit 60 80 V 100 60 80 V 100 60 80 V 100 5.0 V Page 1 of 5 IC Collector Current ICM Collector Peak Current IB Base Current PT Power Dissipation TJ Ts Junction Storage Temperature @ TC < 25° 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 12 A 20 A 0.2 mA 150 Watts 200 -65 to +200 °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 Value Unit 1.17 °C/W Page 2 of 5 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) 2N6050 2N6057 2N6051 VCE= VCEX =80 V, VBE=-1.5 V 2N6058 VCE= VCEX =100 V, 2N6052 VBE=-1.5 V 2N6059 VCE= VCEX =60 V, VBE=-1.5 V 2N6050 TC=150°C 2N6057 VCE= VCEX =80 V, VBE=-1.5 V 2N6051 TC=150°C 2N6058 VCE= VCEX =100 V, 2N6052 VBE=-1.5 V, TC=150°C 2N6059 2N6050 VCE=30 Vdc, IB=0 2N6057 2N6051 VCE=40 Vdc, IB=0 2N6058 2N6052 VCE=50 Vdc, IB=0 2N6059 2N6050 2N6057 VEB=5 V 2N6051 2N6058 2N6052 2N6059 2N6050 60 2N6057 2N6051 IC=0.1 A 80 2N6058 2N6052 100 2N6059 VCE= VCEX =60 V, VBE=-1.5 V ICEX ICEO IEBO VCEO(SUS) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage (*) Min Typ Mx Unit - 500 µA 5 mA 1.0 mA 2.0 mA - - - - - - Page 3 of 5 V IC=6 A, IB=24 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=12 A, IB=120 mA VBE(SAT) VBE(ON) fT Base-Emitter Saturation Voltage (*) Base-Emitter Voltage (*) Transition Frequency IC=12 A, IB=120 mA IC=6 A, VCE=3 V IC=5 A, VCE=3 V, f=1 MHz VCE=3 V, IC=6.0 A hFE DC Current Gain (*) VCE=3.0 V, IC=12 A 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 - - 2.0 V - - 3.0 - - 4 V - - 2.8 V 4 - - MHz 750 - 18000 - 100 - - ! ! ! For PNP types current and voltage values are negative ! ! ! (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% Page 4 of 5 MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Page 5 of 5