PNP SILICON TRANSISTORS, EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector to Base Voltage VCEO #Collector-Emitter Voltage VCER Collector-Emitter Voltage VEBO Emitter-Base Voltage VCEX Collector-Base Voltage IC Collector Current – Continuous ICM Collector Current – Peak IB Base Current – Continuous PTOT Power Dissipation TJ Junction Temperature VBE=1.5 V tp=5 ms Value 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 -40 -60 -80 -40 -60 -80 -40 -60 -80 Unit V V V -5.0 V -40 -60 -80 V 2N4901 2N4902 2N4903 -5 A 2N4901 2N4902 2N4903 -10 A 2N4901 2N4902 2N4903 -1 A 87.5 W 200 °C -65 to +200 °C 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 TSTG Storage Temperature 2N4901 2N4902 2N4903 3 THERMAL CHARACTERISTICS Symbol Ratings RthJC Thermal Resistance, Junction to Case RthJA Junction to Free Air Thermal Resistance Value Unit 2 °C/W 47.3 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) Ratings Collector-Emitter Breakdown Voltage) Test Condition(s) IC=200 mAdc, IB=0 VCE=-2.0 V, IC=-1.0 A hFE DC Current Gain (*) VCE=-2.0 V, IC=-5.0 A ICBO ICEX Collector-Base cut-off Current Collector Cutoff Current VCE=-40 V, IE=0 VCE=-60 V, IE=0 VCE=-80 V, IE=0 VCE=-40 V, VEB=1.5 V VCE=-40 V, VEB=1.5 V, TCASE=150°C VCE=-60 V, VEB=1.5 V VCE=-60 V, VEB=1.5 V, TCASE=150°C VCE=-80 V, VEB=1.5 V VCE=-80 V, VEB=1.5 V, TCASE=150°C IEBO Emitter Cutoff Current VBE=5.0 V, IC=0 Hfe Forward Current Transfer Ratio (*) VCE=-10 V, IC=-0.5 A f =1MHz VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-1.0 A, IB=-0.1 A IC=-5.0 A, IB=-1.0 A VBE Base-Emitter Voltage (*) IC=-1.0 A, VCE=-2.0 V 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 Min Typ Mx Unit -40 -60 -80 - - V 20 - 80 V 7 - - - - 0.1 0.1 0.1 -0.1 - - -2.0 - - -0.1 - - -2.0 - - -0.1 - - -2.0 - - -1.0 mA 20 - - V - - -0.4 mA mA V - - -1.5 - - -1.2 V 3 VBE(SAT) Base-Emitter Saturation Voltage (*) IC=-5.0 A, IB=-1.0 A fT Transition Frequency VCE=-10 V, IC=-1.0 A, f=1.0 kHz Is/b Second Breakdown Collector Current t=1 s, VCE=40 V, TCASE=100°C 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 - 1.7 - V 4 - - MHz 1.25 - - A In accordance with JEDEC Registration Data (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector 3