MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS For use as output devices in complementary general purpose amplifier applications. • High DC current Gain – hFE=3500 (Typ) @ IC=10 Adc • Monolithic Construction with Built-in Base Emitter Shunt Resistor The MJ4030/31/32 ares the transistors NPN The complementary PNP types are the MJ4033/34/35 ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ratings Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage IE=0 IB=0 IC=0 Page 1 of 4 Value MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 Unit 60 80 V 100 60 80 V 100 5.0 V IC Collector Current IB Base Current PT Power Dissipation TJ Ts Junction Storage Temperature @ TC < 25° MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 16 A 0.5 A 150 Watts 200 -65 to +200 °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Page 2 of 4 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 Value Unit 1.17 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO Ratings Test Condition(s) Collector-Emitter Voltage (*) IC=100 mAdc, IB=0 VCE=30 Vdc, IB=0 ICEO Collector Cutoff Current VCE=40 Vdc, IB=0 VCE=50 Vdc, IB=0 IEBO Emitter Cutoff Current VBE=5.0 V, IC=0 VCB=60 V, RBE=1.0 k ohm VCB=80 V, RBE=1.0 k ohm ICER VCE(SAT) Collector-Emitter Leakage Current VCB=100 V, RBE=1.0 k ohm VCB=60 V, RBE=1.0 k ohm, TC=150°C VCB=80 V, RBE=1.0 k ohm, TC=150°C VCB=100 V, RBE=1.0 k ohm, TC=150°C Collector-Emitter saturation Voltage (*) IC=10 A, IB=40 mAdc Page 3 of 4 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 Min Typ Mx Unit 60 - - 80 - - V 3.0 mA 5.0 mA 100 - - - - - - - - - - - - - - - - 1.0 mAdc 5.0 Vdc - - 2.5 IC=16 A, IB=80 mAdc Base-Emitter Voltage (*) VBE hFE DC Current Gain (*) IC=10 Adc, VCE=3.0Vdc VCE=10 Vdc, IC=3.0 Adc MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% ! ! ! For PNP types current and voltage values are negative ! ! ! MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Page 4 of 4 - - 4.0 - - 3 V 1000 - - -