COMSET BUV23

NPN BUV23
POWER SWITCH APPLICATIONS
The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.
They are intended for use in power switching appications in military and industrial equipments.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
VCEX
VCER
IC
ICM
IB
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
IE = 0
IC = 0
VBE = -1.5V
RBE <= 100 Ω
tp = 10ms
@ TC = 25°
Value
Unit
325
400
7.0
400
390
30
40
6
250
200
-65 to +200
V
V
V
V
V
A
A
A
Watts
°C
°C
Value
Unit
0.7
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICEO
Collector-Emitter
Sustaining Voltage (1)
Emitter-BaseBreakdown
Voltage (1)
Collector Cutoff Current
ICEX
Collector Cutoff Current
VCEO(SUS)
VEB0(SUS)
Min Typ Mx Unit
325
-
-
V
IC=0A , IE=50 mA
7
-
-
V
VCE=260 V , IB=0A
VCE= VCEX , VBE= -1.5V
VCE= VCEX , VBE= -1.5V, Tcase = 125°C
-
-
3
3
12
mA
IC=200 mA, L= 25mH
COMSET SEMICONDUCTORS
1/2
mA
NPN BUV23
IEBO
Emitter Cutoff Current
hFE
DC Current Gain (1)
VCE(SAT)
Collector-Emitter
saturation Voltage (1)
VBE(SAT)
Base-Emitter saturation
Voltage (1)
Symbol
IC=16 A , IB=3.2 A
15
8
-
0.2
0.35
1
60
0.8
1
IC=16 A , IB=3.2 A
-
1.15
1.5
VEB=5.0 V, IC=0
IC=8 A , VCE=4.0 V
IC=16 A , VCE=4.0 V
IC=8 A , IB=1.6 A
Ratings
Test Condition(s)
Transition frequency
VCE=15 V , IC=2 A , f=10 MHz
8
-
-
ton
Turn-on time
IC=16 A , IB=3.2 A
-
0.55
1.3
ts
Storage time
-
1.7
2.5
tf
File time
-
0.26
1.2
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
V
MHz
µs
(1) Pulse Duration = 300 µs, Duty Cycle <= 2%
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
-
Min Typ Mx Unit
fT
IC=16 A
IB1 = -IB2 =3.2 A
mA
2/2