BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage -IC(RMS) -IC Collector Current -ICM Value BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C Unit 60 80 100 120 60 80 100 120 V V 5.0 V 16 A 20 Base Current BDX66 BDX66A BDX66B BDX66C 0.25 A PT Power Dissipation BDX66 BDX66A BDX66B BDX66C 150 Watts W/°C TJ Junction Temperature -55 to +200 °C TS Storage Temperature BDX66 BDX66A BDX66B BDX66C -IB @ TC = 25° COMSET SEMICONDUCTORS 1/4 BDX 66, A, B, C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX66 BDX66A BDX66B BDX66C Value Unit 1.17 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -VCEO(SUS) -ICEO Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Min Typ Mx Unit BDX66 60 - - BDX66A 80 - V -IC=0.1 A, L=25mH BDX66B 100 - - BDX66C 120 - - -VCE=30 V BDX66 - - -VCE=40 V BDX66A - - Collector Cutoff Current 3 -VCE=50 V BDX66B - - -VCE=60 V BDX66C - - COMSET SEMICONDUCTORS 2/4 mA BDX 66, A, B, C Symbol -IEBO Ratings Test Condition(s) Emitter Cutoff Current BDX66 BDX66A BDX66B BDX66C Min Typ M Unit x - - 5.0 - - 1 TCASE=200°C, -VCB=40 V - - 5 TCASE=25°C, -VCB=50 V - - 1 - - 5 -VBE=5 V TCASE=25°C, -VCB=60 V mA BDX66 BDX66A TCASE=200°C,-VCB=80 V -ICBO Collector-Base Cutoff Current mA - - 1 TCASE=200°C, -VCB=60 V - - 5 TCASE=25°C, -VCB=120 V - - 1 - - 5 1000 - 2000 1000 - - - - 2 V - 2 2,5 - V V TCASE=25°C, -VCB=100 V BDX66B BDX66C TCASE=200°C, -VCB=70 V hFE hFE hFE DC Current Gain DC Current Gain DC Current Gain -VCE=3 V,- IC=1 A -VCE=3 V,- IC=10 A -VCE=3 V,- IC=16 A -VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=10 A, -IB=40 mA -VBE VF Base-Emitter Voltage(1&2) Diode forward voltage -VCE=3 V, -IC=10 A IF=10 A C22b ton Switching characteristics BDX66 BDX66A BDX66B BDX66C IE=0 A, -VCB=-10V, f=1 MHz BDX66 BDX66A BDX66B BDX66C - 300 - pF VCC=12V, -IC=10 A, -IB1= IB2=40 mA BDX66 BDX66A - 1 - µs COMSET SEMICONDUCTORS 3/4 BDX66B BDX66C toff 3.5 - - BDX 66, A, B, C Symbol Ratings Test Condition(s) fhfe -VCE=3 V,-IC=5 A BDX66 BDX66A BDX66B BDX66C Min Typ Mx Unit - 60 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 4/4 kHz