BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage 45 V VCBO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V VCEX Collector-Emitter Voltage 50 V IC Collector Current 15 A IB Base Current 7 A PT Power Dissipation 117 Watts TJ Junction Temperature -65 to +200 °C TS VBE=-1.5 V @ TC = 25° Storage Temperature COMSET SEMICONDUCTORS 1/3 BD142 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Value Unit 1.5 °C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCEO(BR) Collector-Emitter Breakdown Voltage (*) IC=200 mA, IB=0 45 V VCEX(BR) Collector-Emitter Breakdown Voltage (*) IC=100 mA, VBE=-1.5 V 50 V VCE(SAT) Collector-Emitter Saturation IC=4 A, IB=0.4 A Voltage (*) ICEX Collector-Emitter Cutoff Current IEBO VBE Emitter-Base Cutoff Current Base-Emitter Voltage (*) - - 1.1 V VCE= 40 V VBE=-1.5 V - - 2 mA VEB=7 V - - 1 mA IC=4.0 A, VCE=4.0V - - 1.5 V COMSET SEMICONDUCTORS 2/3 BD142 Symbol Ratings Test Condition(s) Second Breakdown collector current IS/B t=1s, VCE=39 V VCE=4.0 V, IC=4.0 A Min Typ Mx Unit 3 - - 12.5 - 160 Static Forward Current Transfer Ratio (*) hFE VCE=4.0 V, IC=0.5 A 20 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 A inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 3/3