. BDY53 – BDY54 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PTOT Power Dissipation TJ Junction Temperature TStg Storage Temperature Value BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 @ TC = 25° BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 COMSET SEMICONDUCTORS Unit 60 120 100 180 V V 7 V 12 A 5 A 60 Watts 200 °C -65 to +200 °C 1/3 BDY53 – BDY54 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDY53 BDY54 60 120 - - V BDY53 BDY54 - - 3.0 mA VCE=100 V VBE=-1.5 V TCASE=150°C BDY53 - - VCE=150 V VBE=-1.5 V TCASE=150°C 15 mA BDY54 VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IEBO Emitter-Base Cutoff Current VEB=7 V ICEX VCE(SAT) Collector-Emitter Cutoff Current Collector-Emitter saturation Voltage (*) Min Typ Mx Unit IC=100 mA, IB=0 IC=4.0 A, IB=0.4 A IC=7.0 A, IB=1.4 A IC=4.0 A, IB=0.4 A BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 - - - - 1.1 V - - 2.2 - - 2 - - 2.5 VBE(SAT) Base-Emitter Voltage (*) h21E Static Forward Current transfer ratio (*) VCE=1.5 V, IC=2 A BDY53 BDY54 20 - 60 V fT Transition Frequency VCE=4.0 V, IC=0.5 A, f=10 MHz BDY53 BDY54 20 - - MHz t d + tr Turn-on time IC=5 A, IB=1 A BDY53 BDY54 - 0.3 - µs t s + tf Turn-off time IC=5 A, IB1=1 A, IB2=-0.5 A BDY53 BDY54 - 1.8 - µs IC=7.0 A, IB=1.4 A V (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% COMSET SEMICONDUCTORS 2/3 BDY53 – BDY54 MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 3/3