Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar Transistor BTB1580J3 BVCEO IC RCESAT -120V -4A 600mΩ Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580J3 TO-252 C B ≒6K ≒ 8k ≒60 E B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw≦300μs, Duty≦2%. BTB1580J3 Symbol Limits Unit VCBO VCEO VEBO IC ICP -120 -120 -5 -4 -6 1.5 20 83.3 6.25 150 -55~+150 V V V A A W W °C/W °C/W °C °C Pd RθJA RθJC Tj Tstg CYStek Product Specification CYStech Electronics Corp. Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -120 -120 - Typ. - 1000 500 - - Max. -1 -2 -2 -2 -2.8 200 Unit V V mA mA mA V V pF Test Conditions IC=-1mA, IB=0 IC=-100μA, IE=0 VCB=-100V, IE=0 VCE=-50V, IB=0 VEB=-5V, IC=0 IC=-2A, IB=-2mA VCE=-4V, IC=-2A VCE=-4V, IC=-1A VCE=-4V, IC=-2A VCB=-10V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTB1580J3 Package TO-252 (Pb-free) Shipping Marking 2500 pcs / Tape & Reel B1580 Recommended soldering footprint BTB1580J3 CYStek Product Specification Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Current Gain---HFE 10000 VCE = 4V 1000 100 10 VCE (SAT)@IC =250IB 1000 100 1 1 10 100 1000 10000 1 Collector Current---IC(mA) 1000 10000 On voltage vs Collector Current 10000 10000 VBE (SAT)@IC = 250IB VBE (ON) @VCE = 4V On voltage---(mV) Saturation Voltage---(mV) 100 Collector Current---I C(mA) Saturation Voltage vs Collector Current 1000 1000 100 100 1 10 100 1000 1 10000 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Power Derating Curve 25 1.6 Power Dissipation---PD(W) 1.4 Power Dissipation---PD(W) 10 1.2 1 0.8 0.6 0.4 20 15 10 5 0.2 0 0 0 50 100 150 Ambient Temperature---TA(℃) BTB1580J3 200 0 50 100 150 200 Case Temperature---TC (℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTB1580J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1580J3 CYStek Product Specification Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 6/6 CYStech Electronics Corp. TO-252 Dimension Marking: C A Device Name D B □□ G F L Date Code B1580 3 H E K 2 Style: Pin 1.Base 2.Collector 3.Emitter I 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; tin plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1580J3 CYStek Product Specification