CYStech Electronics Corp. Spec. No. : C203N3G Issued Date : 2008.12.26 Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2411N3G Description • The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching application. • High IC(Max), IC(Max) = 0.6A. • Low VCE(sat) , Typ. VCE(sat) = 0.4V at IC/IB = 500mA/50mA. Optimal for low Voltage operation. • Complementary to BTA1036N3G. • Pb-free and Halogen-free package Symbol Outline BTC2411N3G SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Limits 75 40 6 0.6 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V A mW mW °C/W °C/W °C °C Note : Free air condition BTC2411N3G CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203N3G Issued Date : 2008.12.26 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat) 2 *VCE(sat)3 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 75 40 6 0.75 85 90 95 100 40 300 - Typ. 6 Max. 10 10 10 0.5 0.4 0.75 0.95 1.2 300 - Unit V V V nA nA nA V V V V V MHz pF Test Conditions IC=10μA IC=10mA IE=10μA VCB=60V VCE=60V, VBE=-3V VEB=3V IC=380mA, IB=10mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=5V, IC=20mA, f=100MHz VCB=5V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTC2411N3G BTC2411N3G Package SOT-23 (Pb-free & Halogen-free package) Shipping Marking 3000 pcs / Tape & Reel 2X CYStek Product Specification Spec. No. : C203N3G Issued Date : 2008.12.26 Revised Date : Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=3V 100 10 VCE(SAT)@IC=10IB 100 10 0.1 1 10 100 1000 1 Collector Current ---IC(mA) 10 100 1000 Collector Current ---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 1000 1 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) FT@VCE=5V VBE(SAT)@IC=10IB 100 0.1 0.1 1 10 100 1000 Collector Current--- IC(mA) 1 10 100 Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 BTC2411N3G 50 100 150 Ambient Temperature --- Ta( ℃ ) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203N3G Issued Date : 2008.12.26 Revised Date : Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTC2411N3G CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203N3G Issued Date : 2008.12.26 Revised Date : Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC2411N3G CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203N3G Issued Date : 2008.12.26 Revised Date : Page No. : 6/6 SOT-23 Dimension Marking: A L 2X TE 3 B S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H Style: Pin 1.Base 2.Emitter 3.Collector J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC2411N3G CYStek Product Specification