Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/5 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640I3 -50V -7A 70mΩ Features • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A • Excellent current gain linearity • RoHS compliant package Symbol Outline TO-251 BTA1640I3 B：Base C：Collector E：Emitter B B CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits -60 -50 -5 -7 -10 (Note 1) 1 20 125 6.25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380μs, Duty≦2%. BTA1640I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 2/5 Characteristics (Ta=25°C) Symbol *BVCEO BVCBO BVEBO ICEO ICBO IEBO *VCE(sat) *VBE(sat) *hFE *hFE Min. -50 -60 -5 120 30 Typ. -0.2 - Max. -50 -1 -1 -0.4 -1.2 400 - Unit V V V μA μA μA V V - Test Conditions IC=-10mA, IB=0 IC=-1mA, IE=0 IE=-1mA, IC=0 VCE=-30V, IB=0 VCB=-50V, IB=0 VEB=-5V, IC=0 IC=-3A, IB=-150mA IC=-3A, IB=-150mA VCE=-1V, IC=-1A VCE=-1V, IC=-3A *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification of hFE 1 Rank Range Y 120~240 G 200~400 Ordering Information Device BTA1640I3 Package TO-251 (RoHS compliant) Shipping Marking 80 pcs / tube, 50 tubes / box A1640 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 VCE(SAT) VCE=2V Saturation Voltage---(mV) Current Gain---HFE 1000 100 VCE=1V 10 IC=30IB 100 IC=50IB 10 1 BTA1640I3 1000 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 3/5 Characteristic Curves(Cont.) Saturation Voltage vs Collector Current Grounded Emitter Output Characteristics 4000 VBE(SAT)@IC=50IB Collector Current---IC(mA) Saturation Voltage---(mV) 10000 1000 20mA 3500 3000 2500 10mA 2000 1500 6mA 1000 2mA 500 IB=0 0 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 Grounded Emitter Output Characteristics 6 Power Derating Curve 8000 1.2 50mA 7000 1 6000 5000 25mA 4000 3000 2000 10mA 1000 5mA IB=0mA 0 0 1 2 3 4 5 6 Power Dissipation---PD(W) Collector Current---IC(mA) 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA(℃) Collector-to-Emitter Voltage---VCE(V) Power Derating Curve Power Dissipation---PD(W) 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTA1640I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 4/5 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature BTA1640I3 Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. CYStek Product Specification Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 5/5 CYStech Electronics Corp. TO-251 Dimension A B C Marking: D A1640 F G 3 K E I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter J 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1640I3 CYStek Product Specification