CYStech Electronics Corp. Spec. No. : C724X8 Issued Date : 2009.06.12 Revised Date : Page No. : 1/9 P-Channel Logic Level Enhancement Mode MOSFET with Schottky Diode MSFA0M02X8 MOSFET product Summary BVDSS RDSON(MAX) ID -20V 100mΩ -3A Schottky Product Summary VKA VF IF 20V 0.46V 1A Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Symbol Outline DFN3×2 G：Gate S：Source D：Drain MSFA0M02X8 A: Anode K: Cathode CYStek Product Specification CYStech Electronics Corp. Spec. No. : C724X8 Issued Date : 2009.06.12 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 1) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) TA=25 °C Power Dissipation (MOSFET) TA=70 °C TA=25 °C Power Dissipation (Schottky) TA=70 °C Operating Junction and Storage Temperature Range Symbol Limits Unit BVDSS VGS ID ID IDM IF IFM -20 ±12 -3 -2.4 -12 1 3 1.5 0.9 1.2 0.76 -55~+150 V V PD Tj; Tstg A W °C Note : 1. Pulse width limited by maximum junction temperature. Duty cycle≤1%. Thermal Resistance Ratings Parameter Thermal Resistance, Junction-to-case(MOSFET) Thermal Resistance, Junction-to-ambient(MOSFET) Thermal Resistance, Junction-to-case(Schottky) Thermal Resistance, Junction-to-ambient(Schottky) Symbol Rth,j-c Rth,j-a Rth,j-c Rth,j-a Maximum 40 85 50 105 Unit °C/W Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) IGSS IDSS ID(ON) *RDS(ON) *GFS Dynamic Ciss Coss Crss Rg MSFA0M02X8 Min. Typ. Max. Unit -20 -0.3 -3 - -0.75 85 120 4.5 -1.2 ±100 -1 -10 100 150 - V V nA μA μA A - 1033 386 367 6.5 - Test Conditions S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±12V, VDS=0V VDS=-16V, VGS=0V VDS=-16V, VGS=0, TJ=125°C VDS=-5V, VGS=-4.5V ID=-3A, VGS=-4.5V ID=-2.5A, VGS=-2.5V VDS=-5V, ID=-3A pF VDS=-10V, VGS=0, f=1MHz Ω VGS=15mV, VDS=0V, f=1MHz mΩ CYStek Product Specification CYStech Electronics Corp. *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM - 15 30 35 30 10 3.6 3 - - 1.2 -2.5 -10 Spec. No. : C724X8 Issued Date : 2009.06.12 Revised Date : Page No. : 3/9 ns VDS=-10V, ID=-1A, VGS=-4.5V, RGS=6Ω nC VDS=-10V, ID=-3A, VGS=-4.5V V A A VGS=0V, IF=IS *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Schottky Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol *VF IRM CT Min. - Typ. 0.40 0.47 0.44 0.008 2.8 0.009 3.2 30 Max. 0.46 0.56 0.53 0.08 28 0.09 32 - Unit V mA pF Test Conditions IF=0.5A IF=1A IF=1A, TJ=125°C VR=5V VR=5V, TJ=125°C VR=20V VR=20V, TJ=125°C VR=10V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Footprint MSFA0M02X8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C724X8 Issued Date : 2009.06.12 Revised Date : Page No. : 4/9 Characteristic Curves MSFA0M02X8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C724X8 Issued Date : 2009.06.12 Revised Date : Page No. : 5/9 Characteristic Curves(Cont.) MSFA0M02X8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C724X8 Issued Date : 2009.06.12 Revised Date : Page No. : 6/9 Schottky Characteristic Curves MSFA0M02X8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C724X8 Issued Date : 2009.06.12 Revised Date : Page No. : 7/9 DFN3×2 Dimension Marking: Device Name Date Code 8-Lead DFN3×2 Plastic Package CYStek Package Code: X8 *: Typical Inches Min. Max. 0.0276 0.0354 0.0000 0.0020 0.0094 0.0138 0.0031 0.0098 *0.0118 *0.0079 DIM A A1 b c D E Millimeters Min. Max. 0.70 0.90 0.00 0.05 0.24 0.35 0.08 0.25 *3.00 *2.00 DIM E1 e L L1 θ1 Inches Min. Max. *0.0689 *0.0256 0.0079 0.0157 0.0000 0.0039 0° 12° Millimeters Min. Max. *1.75 *0.65 0.20 0.40 0.00 0.10 0° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MSFA0M02X8 CYStek Product Specification